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公开(公告)号：US20200319934A1
公开(公告)日：2020-10-08
申请号：US16835330
申请日：2020-03-31
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis , Xinchen Guo
Abstract: Various embodiments of the present application relate to a resource management platform that monitors and controls the computational tasks dynamically, and improves or adapts the control during runtime. The resource management platform is able to enhance the resource usage; depending on the width of resource usage fluctuations of the original, unmanaged computational code, the performance enhancement can reach factors exceeding 3×.
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2.发明公开公开(公告)号：US20240020437A1
公开(公告)日：2024-01-18
申请号：US18221839
申请日：2023-07-13
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis , Han-Wei Hsiao
IPC: G06F30/20
CPC classification number: G06F30/20
Abstract: A method of generating a computational model includes generating a set of benchmark parameters indicative of material properties of a reference material system through performance of at least one of a simulation of, or an experiment on, a subset of the reference material system, generating a plurality of DFTB parameters for the reference material system, performing an optimization routine to adjust each DFTB parameter of the plurality of DFTB parameters to improve accuracy relative to the set of benchmark parameters of the reference material system, and storing an optimized set of DFTB parameters corresponding to the material properties of the reference material system.
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公开(公告)号：US20220352357A1
公开(公告)日：2022-11-03
申请号：US17838485
申请日：2022-06-13
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis , James Charles
Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.
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公开(公告)号：US12132102B2
公开(公告)日：2024-10-29
申请号：US17838485
申请日：2022-06-13
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis , James Charles
CPC classification number: H01L29/66977 , H01L29/152
Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.
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Patent Agency Ranking
公开(公告)号：US20180290106A1
公开(公告)日：2018-10-11
申请号：US15944776
申请日：2018-04-03
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis
Abstract: A system includes a plurality of nanoporous filtering media, wherein each nanoporous filtering media of the plurality of nanoporous filtering media includes a plurality of nanopores, wherein the plurality of nanoporous filtering media are stacked over each other. The system further includes a voltage source connected to a nanoporous filtering media of the plurality of nanoporous filtering media, wherein the voltage source is configured to provide a voltage to the nanoporous filtering media of the plurality of nanoporous media, wherein the voltage source is configured to establish an electrostatic charge within a circumference of each nanopore of the plurality of nanopores of the nanoporous filtering media.
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公开(公告)号：US20250160054A1
公开(公告)日：2025-05-15
申请号：US18943654
申请日：2024-11-11
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis , Han-Wei Hsiao
Abstract: A piezoelectric material system includes a first material, a second material positioned near the first material, and a material adjustment mechanism. The first and second materials are operable to form a material interaction and define at least one collective material property. The material adjustment mechanism is configured to maintain the material interaction between the first material and second material at a user-specified material interaction, and the material adjustment mechanism is selectively operable to adjust the user-specified material interaction to thereby adjust the collective material property.
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公开(公告)号：US11362200B2
公开(公告)日：2022-06-14
申请号：US16435457
申请日：2019-06-07
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis , James Charles
Abstract: A field-effect transistor (FET) includes a fin, an insulator region, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or more lightly doped than the first and second regions. The interior region of the fin is formed as a superlattice of layers of first and second materials alternating vertically. The insulator layer extends around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the gate are configured to generate an inhomogeneous electrostatic potential within the interior region, the inhomogeneous electrostatic potential cooperating with physical properties of the superlattice to cause scattering of charge carriers sufficient to change a quantum property of such charge carriers to change the ability of the charge carriers to move between the first and second materials.
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公开(公告)号：US10763367B2
公开(公告)日：2020-09-01
申请号：US16407771
申请日：2019-05-09
Applicant: Purdue Research Foundation
Inventor： Tillmann C. Kubis , Prasad Sarangapani
Abstract: A tunnel field-effect transistor (TFET) includes a fin, an insulator layer, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or is more lightly doped than the first region and the second region. At least the interior region of the fin formed as a type II superlattice, wherein materials of the superlattice alternate vertically. The insulator layer is formed around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the at least one gate are configured to generate an inhomogeneous electrostatic potential within the interior region.
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公开(公告)号：US20180121583A1
公开(公告)日：2018-05-03
申请号：US15859610
申请日：2017-12-31
Applicant: Purdue Research Foundation
Inventor： Gerhard Klimeck , Mykhailo Povolotskyi , Tillmann C. Kubis , Ganesh Hegde
IPC: G06F17/50
CPC classification number: G06F17/5009 , G06F2217/16
Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model
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