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公开(公告)号：US10834340B1
公开(公告)日：2020-11-10
申请号：US16438858
申请日：2019-06-12
Applicant: RAYTHEON COMPANY
Inventor： Ryan Boesch , Matthew C. Thomas , Jeffrey Mitchell
Abstract: A thermal imaging system includes a pixel array having a plurality of pixel groups. Each pixel group including a plurality of pixel rows and a trigger sense circuit including a pixel group input line in signal communication with the plurality of bolometer pixels pixel row containing a plurality of bolometer pixels. The pixel group further includes a selector switch that selectively establishes an electrical connection between the pixel group and the trigger sense circuit. The selector switch operates in a first state to disconnect the pixel group from the pixel group input line while connecting the pixel group to the integration unit such that the integration unit generates the image, and a second state to disconnect the pixel group from the integration unit while connecting the pixel group to the pixel group input line such that the trigger sense circuit monitors the pixel group for a high temperature bolometer.
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Patent Agency Ranking
公开(公告)号：US11626445B2
公开(公告)日：2023-04-11
申请号：US16549069
申请日：2019-08-23
Applicant: RAYTHEON COMPANY
Inventor： Eric J. Beuville , Micky Harris , Ryan Boesch , Christian M. Boemler
IPC: H01L27/146 , H04N5/359 , H01L27/148
Abstract: A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current from the photo-diode to the integration capacitor, the injection transistor having a gate, a source electrically coupled to the photo-diode at a first node, and a drain electrically coupled to the integration capacitor. The injection transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) FET having its gate set to a SONOS gate voltage to control a detector bias voltage of the photo-diode at the first node.
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公开(公告)号：US20210381888A1
公开(公告)日：2021-12-09
申请号：US16892430
申请日：2020-06-04
Applicant: RAYTHEON COMPANY
Inventor： Eric J. Beuville , Micky Harris , Ryan Boesch , Christian M. Boemler
Abstract: A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (VT) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.
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公开(公告)号：US10890492B2
公开(公告)日：2021-01-12
申请号：US16438831
申请日：2019-06-12
Applicant: RAYTHEON COMPANY
Inventor： Matthew Thomas , Craig R. Adams , Ryan Boesch , Jamal Mustafa
Abstract: A bolometer pixel trigger array includes a substrate, an electrically conductive contact pad formed on the substrate, and bolometer formed on the substrate. The bolometer includes at least one thermally conductive trigger arm having a fixed end coupled to a portion of the bolometer and an electrically conductive free end configured to deflect with respect to the fixed end. At least one trigger arm establishes different operating states of the bolometer pixel trigger in response to the at least one trigger arm realizing different temperatures. The different operating states are configured to change an electrical connection between the at least one trigger arm and the contact pad.
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公开(公告)号：US11561132B2
公开(公告)日：2023-01-24
申请号：US16892430
申请日：2020-06-04
Applicant: RAYTHEON COMPANY
Inventor： Eric J. Beuville , Micky Harris , Ryan Boesch , Christian M. Boemler
Abstract: A pixel includes a detector that changes its operating characteristics based on incident energy, an integration capacitor arranged to discharge stored charge through the detector based on changes in the operating characteristics, and an floating gate injection device disposed between the photo-diode and the integration capacitor that controls flow of the charge from the integration capacitor to the detector. The floating gate injection device has a gate, a source electrically coupled to the detector at a first node, and a drain electrically coupled to the integration capacitor. The gate has a control voltage (VT) stored therein to set to a per-pixel bias gate voltage to control a detector bias voltage of the detector at the first node.
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公开(公告)号：US20200066781A1
公开(公告)日：2020-02-27
申请号：US16549069
申请日：2019-08-23
Applicant: RAYTHEON COMPANY
Inventor： Eric J. Beuville , Micky Harris , Ryan Boesch , Christian M. Boemler
IPC: H01L27/146 , H01L27/148 , H04N5/359
Abstract: A pixel includes a photo-diode, an integration capacitor arranged to receive a photo current from the photo-diode and to store charge developed from the photo current; and an injection transistor disposed between the photo-diode and the integration capacitor that controls flow of the photo current from the photo-diode to the integration capacitor, the injection transistor having a gate, a source electrically coupled to the photo-diode at a first node, and a drain electrically coupled to the integration capacitor. The injection transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) FET having its gate set to a SONOS gate voltage to control a detector bias voltage of the photo-diode at the first node.
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