公开(公告)号：US12046623B2

公开(公告)日：2024-07-23

申请号：US17395794

申请日：2021-08-06

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Francis Joseph Kumar ,  Michael K. Jackson ,  Pramodha Marthandam

IPC: H01L31/00 ,  A61B6/03 ,  H01L27/146

CPC classification number: H01L27/14659 ,  A61B6/032 ,  H01L27/14696 ,  H01L27/14698

Abstract: A radiation detector tile includes a single crystal compound semiconductor tile having a zinc blende crystal structure, a (111) plane first major (i.e. prominent) surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes. The tile may be formed by dicing a (111) oriented wafer at directions which are rotated by an angle of 13° to 17° from in-plane slipping directions to reduce or eliminate the side surface chipping and sub surface dislocation defects.

公开(公告)号：US11953452B2

公开(公告)日：2024-04-09

申请号：US17562288

申请日：2021-12-27

Applicant: REDLEN TECHNOLOGIES, INC.

Inventor： Pramodha Marthandam ,  Michael Kevin Jackson

IPC: G01N23/046 ,  A61B6/00 ,  A61B6/03 ,  A61B6/42 ,  G01T1/17 ,  G01T1/24

CPC classification number: G01N23/046 ,  A61B6/032 ,  A61B6/035 ,  A61B6/4233 ,  A61B6/4241 ,  G01T1/17 ,  G01T1/241 ,  G01N2223/501

Abstract: An ionizing radiation detector, such as a photon counting computed tomography detector, includes a semiconductor material plate, a plurality of anodes located on a first side of the semiconductor material plate, where the gaps (i.e., streets) between adjacent anodes are less than 15 μm in width, and at least one cathode located on a second side of the semiconductor material plate. Ionizing radiation detectors according to various embodiments may have improved count rate stability (CRS) characteristics and a reduced number of Non-Conforming Pixels (NCPs) relative to conventional detectors.