公开(公告)号：US20180019237A1

公开(公告)日：2018-01-18

申请号：US15714712

申请日：2017-09-25

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA ,  Masaya KAWANO ,  Koji SOEJIMA

IPC: H01L25/00 ,  H01L21/56 ,  H01L23/00 ,  H01L25/18 ,  H01L21/683 ,  H01L23/538

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/02 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/16137 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/0401

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

公开(公告)号：US20130334705A1

公开(公告)日：2013-12-19

申请号：US13972162

申请日：2013-08-21

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA

IPC: H01L23/522

CPC classification number: H01L25/18 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101. The interconnect component 101 has a constitution where an interconnect layer 103, a silicon layer 105 and an insulating film 107 are sequentially formed. The interconnect layer 103 has a constitution where the interconnect layer 103 has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element 113 is electrically connected with the second semiconductor element 111 through the conductive component.

公开(公告)号：US20190139953A1

公开(公告)日：2019-05-09

申请号：US16238876

申请日：2019-01-03

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA ,  Masaya KAWANO ,  Koji SOEJIMA

IPC: H01L25/00 ,  H01L23/522 ,  H01L23/13 ,  H05K3/00 ,  H01L25/065 ,  H05K3/46 ,  H01L23/498 ,  H01L23/00 ,  H01L23/538 ,  H01L21/683 ,  H01L25/18 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/02 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/16137 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/0401

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

公开(公告)号：US20150137348A1

公开(公告)日：2015-05-21

申请号：US14606425

申请日：2015-01-27

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA ,  Masaya KAWANO ,  Koji SOEJIMA

IPC: H01L23/522

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/02 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/16137 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/0401

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

Abstract translation: 在传统的电子设备及其制造方法中，由于在焊球侧的互连层中使用的树脂受到限制，妨碍了电子设备的成本的降低。 电子设备包括互连层（第一互连层）和互连层（第二互连层）。 第二互连层形成在第一互连层的下表面上。 第二互连层的面积比第一互连层的面积大，并且从第一互连层延伸到外部。

公开(公告)号：US20140346681A1

公开(公告)日：2014-11-27

申请号：US14455336

申请日：2014-08-08

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA ,  Masaya KAWANO ,  Koji SOEJIMA

IPC: H01L23/522

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/02 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/16137 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/0401

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

公开(公告)号：US20190229104A1

公开(公告)日：2019-07-25

申请号：US16375282

申请日：2019-04-04

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA

IPC: H01L25/18 ,  H01L23/538 ,  H01L23/31 ,  H01L23/498 ,  H01L25/03 ,  H01L25/10 ,  H01L25/00 ,  H01L23/522 ,  H01L23/00 ,  H01L25/065 ,  H01L21/56

Abstract: The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101. The interconnect component 101 has a constitution where an interconnect layer 103, a silicon layer 105 and an insulating film 107 are sequentially formed. The interconnect layer 103 has a constitution where the interconnect layer 103 has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element 113 is electrically connected with the second semiconductor element 111 through the conductive component.

公开(公告)号：US20160307875A1

公开(公告)日：2016-10-20

申请号：US15191774

申请日：2016-06-24

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA ,  Masaya KAWANO ,  Koji SOEJIMA

IPC: H01L25/065 ,  H01L25/00

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/02 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/16137 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/0401

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

公开(公告)号：US20170236810A1

公开(公告)日：2017-08-17

申请号：US15354484

申请日：2016-11-17

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA ,  Masaya KAWANO ,  Koji SOEJIMA

IPC: H01L25/00 ,  H01L23/00 ,  H01L25/18 ,  H01L23/538 ,  H01L21/56 ,  H01L21/683

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/02 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/16137 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/0401

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

公开(公告)号：US20160204092A1

公开(公告)日：2016-07-14

申请号：US15072803

申请日：2016-03-17

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA

IPC: H01L25/18 ,  H01L25/065 ,  H01L23/538

CPC classification number: H01L25/18 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/17 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2225/06593 ,  H01L2225/1005 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19107 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The semiconductor device 100 comprises a first semiconductor element 113 provided on a face on one side of a flat plate shaped interconnect component 101, an insulating resin 119 covering a face of a side where the first semiconductor element 113 of the interconnect component 101 is provided and a side face of the first semiconductor element 113, and a second semiconductor element 111 provided on a face on the other side of the interconnect component 101. The interconnect component 101 has a constitution where an interconnect layer 103, a silicon layer 105 and an insulating film 107 are sequentially formed. The interconnect layer 103 has a constitution where the interconnect layer 103 has a flat plate shaped insulating component and a conductive component extending through the insulating component. The first semiconductor element 113 is electrically connected with the second semiconductor element 111 through the conductive component.

公开(公告)号：US20140103524A1

公开(公告)日：2014-04-17

申请号：US14108960

申请日：2013-12-17

Applicant: Renesas Electronics Corporation

Inventor： Yoichiro KURITA ,  Masaya KAWANO ,  Koji SOEJIMA

IPC: H01L23/498

CPC classification number: H01L25/50 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/13 ,  H01L23/3121 ,  H01L23/49816 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L24/02 ,  H01L24/16 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/18 ,  H01L2221/68345 ,  H01L2221/68372 ,  H01L2224/02319 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/16137 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81005 ,  H01L2224/83005 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06555 ,  H01L2225/06582 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/18161 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K3/0058 ,  H05K3/284 ,  H05K3/4682 ,  H05K2201/0195 ,  H05K2201/09527 ,  H05K2201/096 ,  H05K2201/09972 ,  H05K2203/016 ,  H05K2203/0733 ,  H05K2203/1469 ,  H01L2924/00 ,  H01L2224/0401

Abstract: In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

Abstract translation: 在传统的电子设备及其制造方法中，由于在焊球侧的互连层中使用的树脂受到限制，妨碍了电子设备的成本的降低。 电子设备包括互连层（第一互连层）和互连层（第二互连层）。 第二互连层形成在第一互连层的下表面上。 第二互连层的面积比第一互连层的面积大，并且从第一互连层延伸到外部。