公开(公告)号：US10028390B2

公开(公告)日：2018-07-17

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H05K3/30 ,  H05K3/28 ,  H01F27/24 ,  H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H05K3/46 ,  H05K1/18

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.

公开(公告)号：US10008431B2

公开(公告)日：2018-06-26

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09942991B2

公开(公告)日：2018-04-10

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H01L21/50 ,  H01L21/56 ,  H01L23/48 ,  H05K3/30 ,  H05K3/28 ,  H01F27/24 ,  H01L23/31 ,  H01L23/36 ,  H01L23/373 ,  H01L23/498 ,  H05K3/46 ,  H05K1/18

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.

公开(公告)号：US09824951B2

公开(公告)日：2017-11-21

申请号：US14851652

申请日：2015-09-11

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/56 ,  H01L21/683 ,  H01L21/762 ,  H01L23/29 ,  H01L23/367 ,  H01L23/373

CPC classification number: H01L23/3135 ,  H01L21/0217 ,  H01L21/31055 ,  H01L21/31111 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/762 ,  H01L21/76264 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3737 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/16238 ,  H01L2224/73253 ,  H01L2224/81801 ,  H01L2224/97 ,  H01L2924/15174 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00014

Abstract: A printed circuit module and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and a buried oxide (BOX) layer over the at least one device layer. A polymer layer is disposed over the BOX layer, wherein the polymer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

公开(公告)号：US09735044B2

公开(公告)日：2017-08-15

申请号：US14715830

申请日：2015-05-19

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa

IPC: H01L21/00 ,  H01L21/762 ,  H01L27/12 ,  H01L23/29 ,  H01L23/36 ,  H01L23/373 ,  H01L29/786 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a polymer substrate and an interfacial layer over the polymer substrate. A buried oxide layer resides over the interfacial layer, and a device layer with at least a portion of a field effect device resides over the buried oxide layer. The polymer substrate is molded over the interfacial adhesion layer and has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity greater than 1012 Ohm-cm. Methods of manufacture for the semiconductor device include removing a wafer handle to expose a first surface of the buried oxide layer, disposing the interfacial adhesion layer onto the first surface of the buried oxide layer, and molding the polymer substrate onto the interfacial adhesion layer.

公开(公告)号：US09475692B2

公开(公告)日：2016-10-25

申请号：US14805774

申请日：2015-07-22

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  Michael Carroll ,  Jonathan Hale Hammond

IPC: B81B7/00 ,  H01H1/00

CPC classification number: B81B7/0064 ,  H01H1/0036

Abstract: The present disclosure relates to radio frequency (RF) microelectromechanical system (MEMS) device packaging, and specifically to reducing harmonic distortion caused by such packaging. In one embodiment, a die is provided that employs a gold-doped silicon substrate, wherein at least one RF MEMS device is disposed on the gold-doped silicon substrate. By employing the gold-doped silicon substrate, the packaging can achieve an exceptionally high resistivity without any additional expensive components, wherein the high resistivity has an associated low carrier lifetime. Notably, the low carrier lifetime corresponds to reduced harmonic distortion generated by the gold-doped silicon substrate, even when operating at high power. Thus, the gold-doped silicon substrate provides a less expensive packaging in which to place RF MEMS devices, wherein the packaging is capable of operating at high power with reduced harmonic distortion.

Abstract translation: 本公开涉及射频（RF）微机电系统（MEMS）设备封装，并且具体涉及减少由这种封装引起的谐波失真。 在一个实施例中，提供一种使用金掺杂硅衬底的管芯，其中至少一个RF MEMS器件设置在掺金硅衬底上。 通过采用金掺杂硅衬底，封装可以实现非常高的电阻率，而没有任何额外的昂贵的组件，其中高电阻率具有相关联的低载流子寿命。 值得注意的是，低载流子寿命对应于由金掺杂硅衬底产生的减少的谐波失真，即使在高功率下操作。 因此，金掺杂硅衬底提供了一种较便宜的封装，其中放置RF MEMS器件，其中封装能够以较低功率运行并减少谐波失真。

公开(公告)号：US20160134014A1

公开(公告)日：2016-05-12

申请号：US14933552

申请日：2015-11-05

Applicant: RF Micro Devices, Inc.

Inventor： Alexander Wayne Hietala ,  Julio C. Costa

IPC: H01Q1/52 ,  H01Q3/28 ,  H01Q3/30 ,  H01Q19/10 ,  H01Q3/44

Abstract: Aspects disclosed in the detailed description include an antenna on a device assembly. A device assembly includes a silicon device layer having at least one antenna. The device assembly also includes a polymer substrate that is formed with insulating material that does not interfere with the at least one antenna in the silicon device layer. As a result, it is unnecessary to shield the at least one antenna from the polymer substrate, thus allowing radio frequency (RF) signals radiating from the at least one antenna to pass through the polymer substrate.

Abstract translation: 详细描述中公开的方面包括设备组件上的天线。 一种器件组件包括具有至少一个天线的硅器件层。 所述器件组件还包括聚合物衬底，所述聚合物衬底由不与硅器件层中的至少一个天线干涉的绝缘材料形成。 结果，不需要从聚合物基板屏蔽至少一个天线，从而允许从至少一个天线辐射的射频（RF）信号通过聚合物基板。

公开(公告)号：US20160100489A1

公开(公告)日：2016-04-07

申请号：US14872910

申请日：2015-10-01

Applicant: RF Micro Devices, Inc.

Inventor： Julio C. Costa ,  George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott

IPC: H05K3/30 ,  H05K3/28 ,  H05K1/02 ,  H01F27/24 ,  H05K1/18 ,  H05K3/46

CPC classification number: H05K3/284 ,  H01F17/0013 ,  H01F27/24 ,  H01F2017/0086 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/3737 ,  H01L23/49822 ,  H01L23/645 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0655 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/97 ,  H01L2924/15313 ,  H01L2924/18161 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3511 ,  H05K1/183 ,  H05K3/4697 ,  H05K2201/086 ,  H05K2201/1003 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/81 ,  H01L2224/83

Abstract: This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. The semiconductor die includes a Back-End-of-Line (BEOL) region, a Front-End-of-Line (FEOL) region, and a semiconductor handle such that the BEOL region, the FEOL region, and the semiconductor handle are stacked. A first polymer layer is provided over the printed circuit board so as to cover the semiconductor die. The semiconductor handle of the semiconductor die is exposed through the first polymer layer and removed. A second polymer layer is then provided so that the BEOL region, the FEOL region, and at least a portion of the second polymer layer are stacked. The second polymer layer may be provided to have high thermal conductivity and electric isolation properties thereby providing advantageous package characteristics.

Abstract translation: 本公开涉及集成电路（IC）封装及其制造方法。 在一种方法中，印刷电路板设置有半导体管芯。 半导体管芯包括后端行（BEOL）区域，前端（FEOL）区域和半导体手柄，使得BEOL区域，FEOL区域和半导体手柄堆叠 。 在印刷电路板上设置第一聚合物层以覆盖半导体管芯。 将半导体管芯的半导体手柄通过第一聚合物层暴露并除去。 然后提供第二聚合物层，使得BEOL区域，FEOL区域和第二聚合物层的至少一部分被堆叠。 可以提供第二聚合物层以具有高导热性和电隔离性，从而提供有利的包装特性。

公开(公告)号：US09935031B2

公开(公告)日：2018-04-03

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

公开(公告)号：US09859183B2

公开(公告)日：2018-01-02

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/29 ,  H01L23/31 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50 ,  H01L23/36 ,  H01L21/56 ,  H01L23/20 ,  H01L23/367 ,  H01L21/306 ,  H01L23/522 ,  H01L49/02

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.