Abstract:
A new protocol is proposed for transmission of data through lines such as telephone lines. The tones of a signal are grouped, and Trellis encoding is performed only of the members of a group. The computational cost of coding and decoding the data is reduced (compared to treating all the tones of a given direction equivalently), and the invention makes it possible to significantly reduce the computational and memory requirements of the encoder and decoder. Furthermore, Trellis decoding errors are not propagated between the groups.
Abstract:
A new protocol is proposed for transmission of data through lines such as telephone lines. The tones of a signal are grouped, and Trellis encoding is performed only of the members of a group. The computational cost of coding and decoding the data is reduced (compared to treating all the tones of a given direction equivalently), and the invention makes it possible to significantly reduce the computational and memory requirements of the encoder and decoder. Furthermore, Trellis decoding errors are not propagated between the groups.
Abstract:
A line card is proposed in which one or more DMT processing modules 1 communicate with a data link layer platform, such as an ATM, POSPHY or Ethernet processor. The data relating to a single symbol is transmitted between the data link layer platform and a given one of DMT processing modules in a plurality of data portions spaced apart in time. The data portions relating to different channels of a given DMT processing module (or to different DMT processing modules) are interleaved in time. Since the data portions of a given symbol are spaced apart in time, the data relating to a single symbol is transmitted over a longer time period than in conventional devices which reduces the effective burstiness of the traffic, and thus reduces the memory requirements of the data link layer platform.
Abstract:
An integrated memory device comprises a multitude of sense amplifiers which output an amplified data signal on a data line. The data line is forced to a precharge potential when idle. A transistor connects the data line to a precharge potential. The memory device avoids the kickback effect during a data read operation.
Abstract:
A memory cell having first and second access transistors coupled to a storage transistor is disclosed. During a write 0 operation, a degraded logic 0 is written into the memory cell. By storing a degraded logic 0, the leakage current is reduced.
Abstract:
A plurality of integrated circuits in a system, each having a program memory loaded with different sections of a program, and a second memory. The integrated circuits perform the program, such that, when one of the integrated circuits requires a portion of the program, which is contained in its own program memory, it extracts it from the program memory and uses it, but when it requires a portion of the program, which is not contained in its own program memory, it reads it from the program memory of one of the other integrated circuits into its second memory and runs that portion of the program from there. In one example, the system is a line card, and the program is specific to one DSL protocol.
Abstract:
A system with multiple processors sharing a single memory module without noticeable performance degradation is described. The memory module is divided into n independently addressable banks, where n is at least 2 and mapped such that sequential addresses are rotated between the banks. A bank may be further divided into a plurality of blocks. A cache is provided to enable a processor to fetch from memory a plurality of data words from different memory banks to reduce memory latency caused by memory contention.
Abstract:
An improved ADSL system with improved data rate is disclosed. In one embodiment, the upstream data bit rate is increased by extending the upstream transmission band. In another embodiment, the downstream data is also increased by extending the downstream transmission band.
Abstract:
An integrated circuit (1) includes a processing device (2), a program interface (4, 5) coupled to the processing device (2), a data interface (6, 7) coupled to the processing device. The program interface (4, 5) includes a first address bus (4) and a first data bus (5) and the data interface (6, 7) includes a second address bus (6) and a second data bus (7). The integrated circuit also includes address and data bus switching devices (18) and a control device (16). The address bus switching device (18) is coupled to the first and second address buses (4, 6) and adapted to be coupled to an external address bus (11) and the data bus switching device (18) is adapted to be coupled to an external data bus (12) and is coupled to the first and second data buses (5, 7). The control device (16) is coupled to the processing device (2), the address bus switching device (18) and the data bus switching device (18). The control device (16) controls the address and data bus switching devices (18) to couple the first address bus (4) and the first data bus (5) to the external address and data buses (11, 12) or to couple the second address bus (6) and the second data bus (7) to the external address and data buses (11, 12), in response to control signals received from the processing device (2).
Abstract:
The invention relates to a method for converting volatile memory cells to non-volatile memory cells with minimal modifications. There is included a volatile memory cell which is modified to permanently retain data by using one refresh port to transmit an active low voltage signal and configuring one terminal of the storage transistor to receive either an active high or low voltage signal.