Abstract:
A semiconductor die package is disclosed. In one embodiment, the die package includes a semiconductor die including a first surface and a second surface, and a leadframe structure having a die attach region and a plurality of leads extending away from the die attach region. The die attach region includes one or more apertures. A molding material is around at least portions of the die attach region of the leadframe structure and the semiconductor die. The molding material is also within the one or more apertures.
Abstract:
A shielding assembly is configured to provide electromagnetic shielding and environmental protection to one or more electronic components coupled to a substrate. The shielding assembly includes a non-conductive mold compound layer, such as a dielectric epoxy. The mold compound layer is applied to a top surface of the substrate, thereby covering the electronic components and providing protection against environmentally induced conditions such as corrosion, humidity, and mechanical stress. The shielding assembly also includes a conductive layer applied to a top surface of the mold compound layer. The conductive layer is coupled to a ground plane in the substrate, thereby enabling the electromagnetic shielding function. The conductive layer is coupled to the ground plane via one or more metallized contacts that are coupled to the substrate and extend through the mold compound layer.
Abstract:
A semiconductor die package capable of being mounted to a motherboard is disclosed. The semiconductor die package includes a substrate, and a first semiconductor die mounted on the substrate, where the first semiconductor die includes a first vertical device comprising a first input region and a first output region at opposite surfaces of the first semiconductor die. The semiconductor die package includes a second semiconductor die mounted on the substrate, where second semiconductor die comprises a second vertical device comprising a second input region and a second output region at opposite surfaces of the second semiconductor die. A substantially planar conductive node clip electrically communicates the first output region in the first semiconductor die and the second input region in the second semiconductor die. The first semiconductor die and the second semiconductor die are between the substrate and the conductive node clip.
Abstract:
A semiconductor package includes a semiconductor device 30 and a molded upper heat sink 10. The heat sink has an interior surface 16 that faces the semiconductor device and an exterior surface 15 that is at least partially exposed to the ambient environment of the packaged device. An annular planar base 11 surrounds a raised or protruding central region 12. That region is supported above the plane of the base 11 by four sloped walls 13.1-13.4. The walls slope at an acute angle with respect to the planar annular base and incline toward the center of the upper heat sink 10. Around the outer perimeter of the annular base 11 are four support arms 18.1-18.4. The support arms are disposed at an obtuse angle with respect to the interior surface 16 of the planar annular base 11.
Abstract:
An optocoupler package is disclosed. The optocoupler package includes a substrate comprising a leadframe and a molding compound, and a plurality of optocouplers, each optocoupler including (i) an optical emitter, (ii) an optical receiver, (iii) and an optically transmissive medium disposed between the optical emitter and optical receiver, where the optical emitter and the optical receiver are electrically coupled to the leadframe.
Abstract:
A chip device that includes a leadframe that has a die attach cavity. The memory device further includes a die that is placed within the die attach cavity. The die attach cavity is substantially the same thickness as the die. The die is positioned within the cavity and is attached therein with a standard die attachment procedure.
Abstract:
A chip device including two stacked dies. The chip device includes a leadframe that includes a plurality of leads. A first die is coupled to a first side of the leadframe with solder and a second die is coupled to a second side of the leadframe with solder. A molded body surrounds at least a portion of the leadframe and the dies.
Abstract:
A bumped wafer for use in making a chip device. The bumped wafer includes two titanium layers sputtered alternatingly with two copper layers over a non-passivated die. The bumped wafer further includes under bump material under solder bumps contained thereon.
Abstract:
An integrated transistor module includes a lead frame that defines at least one low-side land and at least one high-side land. A stepped portion of the lead frame mechanically and electrically interconnects the low-side and high-side lands. A low-side transistor is mounted upon the low-side land with its drain electrically connected to the low-side land. A high-side transistor is mounted upon the high-side land with its source electrically connected to the high-side land.
Abstract:
An integrated circuit assembly includes a lead frame having a plurality of leads with inner portions. A thermally-conductive clip member is bonded to the inner portions of the leads such that the clip member is electrically isolated from and yet thermally coupled to the lead frame. An integrated circuit die is bonded and thereby thermally coupled to the clip member. The die is electrically connected to the wire die by wire bonds. Encapsulant material is disposed over the inner portions of the leads and at least a portion of the clip member, and encapsulates the die and the wire bonds.