公开(公告)号：US09488344B2

公开(公告)日：2016-11-08

申请号：US14125356

申请日：2012-06-12

Applicant: Joerg Sorg ,  Ralph Wirth

Inventor： Joerg Sorg ,  Ralph Wirth

IPC: F21S4/00 ,  F21V21/00 ,  F21V19/00 ,  F21K99/00 ,  H01L25/075 ,  F21Y101/02 ,  F21Y105/00

CPC classification number: F21V19/0015 ,  F21K9/20 ,  F21K9/90 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L25/0753 ,  H01L2224/48091 ,  Y10T29/4913 ,  H01L2924/00014

Abstract: A method for producing a lighting device may include: providing a first mount, fastening a second mount to the first mount, at least partially severing the second mount into at least two parts after fastening of the second mount to the first mount, and fastening at least two luminescence diode chips to that side of the second mount which is remote from the first mount.

Abstract translation: 一种用于制造照明装置的方法可以包括：提供第一安装件，将第二安装件紧固到第一安装件，在将第二安装件紧固到第一安装件之后，将第二安装件至少部分地切割成至少两个部分，并且紧固在 至少两个发光二极管芯片到第二安装座的远离第一安装座的那侧。

公开(公告)号：US08624289B2

公开(公告)日：2014-01-07

申请号：US12680637

申请日：2008-09-10

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L27/15

CPC classification number: H01L33/507 ,  H01L33/505 ,  H01L33/54 ,  H01L33/56

Abstract: An optoelectronic component comprising the following features is disclosed, at least one semiconductor body (1) provided for emitting electromagnetic radiation of a first wavelength range, an inner radiation-permeable shaped body (2), into which the semiconductor body (1) is embedded, a wavelength-converting layer (6) on an outer side (5) of the inner shaped body (2), said layer comprising a wavelength conversion substance (8) suitable for converting radiation of the first wavelength range into radiation of a second wavelength range, which is different from the first wavelength range, a coupling-out lens (10), into which the inner shaped body (2) and the wavelength-converting layer (6) are embedded, wherein the coupling-out lens (10) has an inner side enclosed by an inner hemisphere area having a radius Rconversion, and an outer side enclosing an outer hemisphere area having a radius Router, and the radii Rconverstion and Router meet the Weierstrass condition: Router≧Rconversion*nlens/nair, where nlens is the refractive index of the coupling-out lens and nair is the refractive index of the surroundings of the coupling-out lens.

Abstract translation: 公开了一种包括以下特征的光电子部件：设置用于发射第一波长范围的电磁辐射的至少一个半导体本体（1），嵌入半导体本体（1）的内辐射透射成形体（2） ，所述内部成形体（2）的外侧（5）上的波长转换层（6），所述层包括适于将第一波长范围的辐射转换成第二波长的辐射的波长转换物质（8） 与第一波长范围不同的范围，内置成形体（2）和波长转换层（6）嵌入其中的耦合透镜（10），其中，耦合透镜（10） 具有由具有半径R转换的内半球区域封闭的内侧和封闭具有半径路由器的外半球区域的外侧，并且半径Rconverstion和路由器满足Weierstrass条件：Router> = Rconversion * nlens / nair，其中nlens是耦合透镜的折射率，nair是耦合透镜的周围的折射率。

公开(公告)号：US08501513B2

公开(公告)日：2013-08-06

申请号：US11992706

申请日：2006-09-14

Applicant: Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

Inventor： Magnus Ahlstedt ,  Dieter Eissler ,  Robert Walter ,  Ralph Wirth

IPC: H01L33/00

CPC classification number: H01L31/022466 ,  H01L31/103 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/42 ,  H01L2224/48463 ,  H01S5/0421 ,  Y02E10/50

Abstract: An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

Abstract translation: 规定了包括半导体本体（10）和电流扩展层（3）的光电半导体部件。 至少在某个地方将电流扩展层（3）施加到半导体本体（10）。 在这种情况下，电流扩散层（3）包含在电流扩散层中形成透明导电金属氧化物（2）的金属（1），并且金属（1）的浓度（x）从该侧减小 （10）面向半导体本体（10）的电流扩展层（3）的电流扩散层（3）的电流扩展层（5）。 还公开了一种用于制造这种半导体部件的方法。

公开(公告)号：US20120235176A1

公开(公告)日：2012-09-20

申请号：US13394097

申请日：2010-08-06

Applicant: Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L27/15 ,  H01L33/52

CPC classification number: H01L33/44 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/73267 ,  H01L2224/76155 ,  H01L2224/82102 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: An optoelectronic module is provided which comprises a first semiconductor body (2) with a radiation exit side (2a) on which an electrical connection region (21, 22) is arranged. The first semiconductor body (2) is arranged with its side opposite the radiation exit side (2a) on a carrier (1). An insulation material (3) is arranged on the carrier (1) laterally next to the first semiconductor body (2), which material forms a fillet and adjoins the semiconductor body (2) form-fittingly. An insulation layer (4) is arranged at least in places on the first semiconductor body (2) and the insulation material (3), on which layer a planar conductive structure is arranged for planar contacting of the first semiconductor body (2), which conductive structure is electrically conductively connected with the electrical connection region (21, 22). A method of producing such an optoelectronic module is furthermore provided.

Abstract translation: 提供了一种光电模块，其包括具有辐射出射侧（2a）的第一半导体本体（2），电连接区域（21,22）布置在其上。 第一半导体本体（2）的一侧与辐射出口侧（2a）相对设置在载体（1）上。 绝缘材料（3）在第一半导体本体（2）的横向方向上布置在载体（1）上，该材料形成一个圆角并且与半导体本体（2）形成适当的连接。 绝缘层（4）至少布置在第一半导体本体（2）和绝缘材料（3）上的位置上，其上布置有用于第一半导体主体（2）的平面接触的平面导电结构的层， 导电结构与电连接区域（21,22）导电连接。 此外还提供了制造这种光电子模块的方法。

公开(公告)号：US20110309755A1

公开(公告)日：2011-12-22

申请号：US13141079

申请日：2009-12-14

Applicant: Ralph Wirth ,  Markus Klein

Inventor： Ralph Wirth ,  Markus Klein

IPC: H05B37/02

CPC classification number: H05B33/0869 ,  H05B33/0872

Abstract: An optoelectronic device for emitting mixed light in a first and a different second wavelength range comprises a first or second semiconductor light source (1, 2) with a first or second light-emitting diode (11, 21), which emits light with a first or second characteristic wavelength in the first or second wavelength range and with a first or second intensity on application of a first or second current (41, 42), an optical sensor (3) for converting of a part (110, 510) of the light emitted in each case by the semiconductor light sources (1, 2) into a first or second sensor signal (341, 342), and a feedback controller (4) for feedback control of the first and second current (41, 42) as a function of the first and second sensor signal (341, 342), wherein the characteristic wavelengths and intensities of the light emitted in each case by the first and second semiconductor light sources (1, 2) exhibit a first or different second temperature and/or current and/or ageing dependency (931, 932, 941, 942), the optical sensor (3) exhibits a first or second wavelength-dependent sensitivity in the first or second wavelength range, which sensitivities are adapted to the first and second temperature dependencies (931, 932, 941, 942), and the feedback controller (4) controls the first and second currents (41, 42) in such a way that the first sensor signal (341) exhibits a given ratio to the second sensor signal (342).

Abstract translation: 用于发射第一和第二波长范围的混合光的光电子器件包括具有第一或第二发光二极管（11,21）的第一或第二半导体光源（1,2），其发射具有第一和第二 或第二特征波长在第一或第二波长范围内并且在施加第一或第二电流（41,42）时具有第一或第二强度，光学传感器（3）用于转换第一或第二波长的部分（110,510） 通过半导体光源（1,2）在每种情况下发射的光分别成为第一或第二传感器信号（341,342），反馈控制器（4）用于将第一和第二电流（41,42）反馈控制为 第一和第二传感器信号（341,342）的功能，其中由第一和第二半导体光源（1,2）在每种情况下发射的光的特征波长和强度呈现第一或不同的第二温度和/ 或当前和/或老化依赖关系（931,932， 941,942），光学传感器（3）在第一或第二波长范围内呈现第一或第二波长依赖灵敏度，其灵敏度适应于第一和第二温度依赖性（931,932,941,942），以及 反馈控制器（4）以第一传感器信号（341）呈现与第二传感器信号（342）的给定比例的方式来控制第一和第二电流（41,42）。

公开(公告)号：US07692204B2

公开(公告)日：2010-04-06

申请号：US10567883

申请日：2004-07-30

Applicant: Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

Inventor： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

IPC: H01L29/08

CPC classification number: H01L33/40 ,  H01L33/02

Abstract: A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

Abstract translation: 一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生有源区（7）的半导体层序列（4），其中半导体 层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接 ），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

公开(公告)号：US07649193B2

公开(公告)日：2010-01-19

申请号：US11904204

申请日：2007-09-26

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L31/00

CPC classification number: H01L33/145 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor body (2), comprising a semiconductor layer sequence with an active region (3) suitable for generating radiation. The semiconductor layer sequence comprises two contact layers (6, 7), between which the active region is arranged. The contact layers are assigned a respective connection layer (12, 13) arranged on the semiconductor body. The respective connection layer is electrically conductively connected to the assigned contact layer. The respective connection layer is arranged on that side of the assigned contact layer which is remote from the active region. The connection layers are transmissive to the radiation to be generated in the active region, and the contact layers are of the same conduction type.

Abstract translation: 一种半导体本体（2），包括具有适于产生辐射的有源区（3）的半导体层序列。 半导体层序列包括两个接触层（6,7），其间布置有源区。 接触层被分配布置在半导体主体上的相应的连接层（12,13）。 相应的连接层导电地连接到所分配的接触层。 相应的连接层布置在远离有源区域的分配接触层的该侧。 连接层对于在有源区域中要产生的辐射是透射的，并且接触层具有相同的导电类型。

公开(公告)号：US20080224156A1

公开(公告)日：2008-09-18

申请号：US11659066

申请日：2005-06-15

Applicant: Ines Pietzonka ,  Wolfgang Schmid ,  Ralph Wirth

Inventor： Ines Pietzonka ,  Wolfgang Schmid ,  Ralph Wirth

IPC: H01L33/00

CPC classification number: H01L33/105 ,  H01L33/465

Abstract: A luminescence diode (1) having an active zone (7) which emits electromagnetic radiation in a main radiating direction (15). A reflection-reducing layer sequence (16) is arranged downstream of the active zone (7) in the main radiating direction (15). The reflection-reducing layer sequence includes a DBR mirror (13), which is formed by at least one layer pair (11, 12), an antireflective layer (9) downstream of the DBR mirror (13) in the main radiating direction (15) and an intermediate layer (14) arranged between the DBR mirror (13) and the antireflective layer (9).

Abstract translation: 发光二极管（1）具有在主辐射方向（15）上发射电磁辐射的有源区（7）。 反射减少层序列（16）布置在主辐射方向（15）的有源区（7）的下游。 反射减少层序列包括由主要辐射方向（15）上的至少一个层对（11,12），DBR反射镜（13）下游的抗反射层（9）形成的DBR反射镜（13） ）和布置在DBR反射镜（13）和抗反射层（9）之间的中间层（14）。

公开(公告)号：US07283577B2

公开(公告)日：2007-10-16

申请号：US11291692

申请日：2005-11-30

Applicant: Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

Inventor： Wolfgang Schmid ,  Ralph Wirth ,  Klaus Streubel

IPC: H01S3/08

CPC classification number: H01L33/105 ,  B82Y20/00 ,  H01L33/405 ,  H01L33/465 ,  H01L2924/0002 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18375 ,  H01S5/34326 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor component, having a semiconductor layer sequence (1) with an active zone (2) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer (4) and an intermediate layer (3) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer (4) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.

Abstract translation: 具有半导体层序列（1）的辐射发射半导体部件，所述半导体层序列（1）具有用于发射辐射的活性区域（2）和布置在所述有源区域下游的第一反射镜。 第一镜包括金属层（4）和由辐射透射和导电材料制成的中间层（3），所述中间层布置在金属层（4）的面向活性区的一侧。 辐射发射半导体部件被提供用于与光学谐振器一起操作，并且用于产生主要为非相干辐射的RCLED或辐射发射半导体部件用于与外部光学谐振器一起操作并且用于产生主要相干辐射作为VECSEL。

公开(公告)号：US07145181B2

公开(公告)日：2006-12-05

申请号：US10476121

申请日：2002-04-26

Applicant: Ralph Wirth

Inventor： Ralph Wirth

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/38

Abstract: A semiconductor chip, in particular a light-emitting diode, has a substrate (2), on which a sequence of semiconductor layers (3) with an active zone (5) has been applied. Above the sequence of semiconductor layers (3) there is a stepped window layer (6), which is structured in the manner of a Fresnel lens and has with regard to the coupling out of radiation the function of a hemispherical lens (7). This produces a semiconductor chip with particularly high coupling-out efficiency.

Abstract translation: 半导体芯片，特别是发光二极管，具有基板（2），在其上施加了具有活性区域（5）的半导体层（3）的序列。 在半导体层（3）的顺序之上，存在以菲涅耳透镜的方式构造的阶梯窗口层（6），并且关于半球形透镜（7）的功能的辐射耦合。 这产生了具有特别高的耦合效率的半导体芯片。