公开(公告)号：US08129823B2

公开(公告)日：2012-03-06

申请号：US11986998

申请日：2007-11-27

Applicant: Ravindra V. Tanikella

Inventor： Ravindra V. Tanikella

IPC: H01L23/58 ,  H01L23/52

CPC classification number: H01L23/49894 ,  C08F283/04 ,  C08G73/121 ,  C08K3/36 ,  C08K9/10 ,  C08K2201/011 ,  C08L79/08 ,  C08L2666/66 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/296 ,  H01L23/3185 ,  H01L23/49822 ,  H01L23/49866 ,  H01L24/16 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/15787 ,  H01L2924/15791 ,  H01L2924/18161 ,  H01L2924/351 ,  H05K1/112 ,  H05K3/28 ,  H05K3/421 ,  H05K3/422 ,  H05K3/4602 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/0158 ,  H05K2201/09436 ,  H05K2201/09472 ,  H05K2201/09509 ,  H05K2201/09827 ,  H05K2203/1163 ,  H05K2203/121 ,  H01L2924/00 ,  H01L2224/0401

Abstract: Highly reliable interconnections for microelectronic packaging. In one embodiment, dielectric layers in a build-up interconnect have a gradation in glass transition temperature; and the later applied dielectric layers are laminated at temperatures lower than the glass transition temperatures of the earlier applied dielectric layers. In one embodiment, the glass transition temperatures of earlier applied dielectric films in a build-up interconnect are increased through a thermosetting process to exceed the temperature for laminating the later applied dielectric films. In one embodiment, a polyimide material is formed with embedded catalysts to promote cross-linking after a film of the polyimide material is laminated (e.g., through photo-chemical or thermal degradation of the encapsulant of the catalysts). In one embodiment, the solder resist opening walls have a wettable layer generated through laser assisted seeding so that there is no gap between the solder resist opening walls and no underfill in the solder resist opening.

Abstract translation: 用于微电子封装的高度可靠的互连。 在一个实施例中，积聚互连中的电介质层具有玻璃化转变温度的等级; 并且稍后施加的电介质层在低于较早施加的电介质层的玻璃化转变温度的温度下被层压。 在一个实施方案中，通过热固化工艺增加了积聚互连中早期施加的介电膜的玻璃化转变温度，以超过用于层压后来施加的电介质膜的温度。 在一个实施方案中，在层压聚酰亚胺材料的膜（例如通过催化剂的密封剂的光化学或热降解）之后，形成具有嵌入催化剂以促进交联的聚酰亚胺材料。 在一个实施例中，阻焊剂开口壁具有通过激光辅助接种产生的可湿性层，使得阻焊剂开口壁之间没有间隙，并且在阻焊剂开口中没有底部填充物。

公开(公告)号：US20150206793A1

公开(公告)日：2015-07-23

申请号：US14161998

申请日：2014-01-23

Applicant: Chandramouleeswaran Subramani ,  Ravindra V. Tanikella

Inventor： Chandramouleeswaran Subramani ,  Ravindra V. Tanikella

IPC: H01L21/768 ,  H01L23/482 ,  H01L23/50

CPC classification number: H01L21/76834 ,  H01L21/02118 ,  H01L21/02312 ,  H01L21/321 ,  H01L21/76801 ,  H01L23/50 ,  H01L23/53228 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A microelectronic structure may include an interconnect structure, an amine functional reactive polymer layer grafted onto the interconnect structure, and a dielectric layer on the amine functional reactive polymer layer, wherein the dielectric layer is bonded to the polymer layer with an amine bond. In one embodiment, the interconnect structure may be fabricated from a copper containing material. In a further embodiment, the dielectric layer may comprise an oxygen functional reactive dielectric layer, such as an epoxy dielectric layer. In one method of fabricating the microelectronic structure, the amine functional reactive polymer layer may be grafted onto the interconnect structure by an initiated chemical vapor deposition process.

Abstract translation: 微电子结构可以包括互连结构，接枝到互连结构上的胺官能反应性聚合物层和在胺官能反应性聚合物层上的介电层，其中介电层用胺键结合到聚合物层。 在一个实施例中，互连结构可以由含铜材料制成。 在另一实施例中，电介质层可以包括氧功能反应性介电层，例如环氧介电层。 在制造微电子结构的一种方法中，胺官能反应性聚合物层可以通过引发的化学气相沉积工艺接枝到互连结构上。

公开(公告)号：US08796825B2

公开(公告)日：2014-08-05

申请号：US13353217

申请日：2012-01-18

Applicant: Ravindra V. Tanikella

Inventor： Ravindra V. Tanikella

IPC: H01L23/58 ,  H01L23/12 ,  H01L23/52

CPC classification number: H01L23/49894 ,  C08F283/04 ,  C08G73/121 ,  C08K3/36 ,  C08K9/10 ,  C08K2201/011 ,  C08L79/08 ,  C08L2666/66 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/296 ,  H01L23/3185 ,  H01L23/49822 ,  H01L23/49866 ,  H01L24/16 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/15787 ,  H01L2924/15791 ,  H01L2924/18161 ,  H01L2924/351 ,  H05K1/112 ,  H05K3/28 ,  H05K3/421 ,  H05K3/422 ,  H05K3/4602 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/0158 ,  H05K2201/09436 ,  H05K2201/09472 ,  H05K2201/09509 ,  H05K2201/09827 ,  H05K2203/1163 ,  H05K2203/121 ,  H01L2924/00 ,  H01L2224/0401

Abstract: Highly reliable interconnections for microelectronic packaging. In one embodiment, dielectric layers in a build-up interconnect have a gradation in glass transition temperature; and the later applied dielectric layers are laminated at temperatures lower than the glass transition temperatures of the earlier applied dielectric layers. In one embodiment, the glass transition temperatures of earlier applied dielectric films in a build-up interconnect are increased through a thermosetting process to exceed the temperature for laminating the later applied dielectric films. In one embodiment, a polyimide material is formed with embedded catalysts to promote cross-linking after a film of the polyimide material is laminated (e.g., through photo-chemical or thermal degradation of the encapsulant of the catalysts). In one embodiment, the solder resist opening walls have a wettable layer generated through laser assisted seeding so that there is no gap between the solder resist opening walls and no underfill in the solder resist opening.

Abstract translation: 用于微电子封装的高度可靠的互连。 在一个实施例中，积聚互连中的电介质层具有玻璃化转变温度的等级; 并且稍后施加的电介质层在低于较早施加的电介质层的玻璃化转变温度的温度下被层压。 在一个实施方案中，通过热固化工艺增加了积聚互连中早期施加的介电膜的玻璃化转变温度，以超过用于层压后来施加的电介质膜的温度。 在一个实施方案中，在层压聚酰亚胺材料的膜（例如，通过催化剂的密封剂的光化学或热降解）之后，用嵌入的催化剂形成聚酰亚胺材料以促进交联。 在一个实施例中，阻焊剂开口壁具有通过激光辅助接种产生的可湿性层，使得阻焊剂开口壁之间没有间隙，并且在阻焊剂开口中没有底部填充物。

公开(公告)号：US07335608B2

公开(公告)日：2008-02-26

申请号：US10948386

申请日：2004-09-22

Applicant: Ravindra V. Tanikella

Inventor： Ravindra V. Tanikella

IPC: H01L21/31 ,  H01L21/302

CPC classification number: H01L23/49894 ,  C08F283/04 ,  C08G73/121 ,  C08K3/36 ,  C08K9/10 ,  C08K2201/011 ,  C08L79/08 ,  C08L2666/66 ,  H01L21/4857 ,  H01L21/563 ,  H01L23/293 ,  H01L23/295 ,  H01L23/296 ,  H01L23/3185 ,  H01L23/49822 ,  H01L23/49866 ,  H01L24/16 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07025 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/15763 ,  H01L2924/15787 ,  H01L2924/15791 ,  H01L2924/18161 ,  H01L2924/351 ,  H05K1/112 ,  H05K3/28 ,  H05K3/421 ,  H05K3/422 ,  H05K3/4602 ,  H05K3/4688 ,  H05K2201/0154 ,  H05K2201/0158 ,  H05K2201/09436 ,  H05K2201/09472 ,  H05K2201/09509 ,  H05K2201/09827 ,  H05K2203/1163 ,  H05K2203/121 ,  H01L2924/00 ,  H01L2224/0401

Abstract: Highly reliable interconnections for microelectronic packaging. In one embodiment, dielectric layers in a build-up interconnect have a gradation in glass transition temperature; and the later applied dielectric layers are laminated at temperatures lower than the glass transition temperatures of the earlier applied dielectric layers. In one embodiment, the glass transition temperatures of earlier applied dielectric films in a build-up interconnect are increased through a thermosetting process to exceed the temperature for laminating the later applied dielectric films. In one embodiment, a polyimide material is formed with embedded catalysts to promote cross-linking after a film of the polyimide material is laminated (e.g., through photo-chemical or thermal degradation of the encapsulant of the catalysts). In one embodiment, the solder resist opening walls have a wettable layer generated through laser assisted seeding so that there is no gap between the solder resist opening walls and no underfill in the solder resist opening.

公开(公告)号：US07816487B2

公开(公告)日：2010-10-19

申请号：US10956624

申请日：2004-09-30

Applicant: Rahul N. Manepalli ,  Ravindra V. Tanikella

Inventor： Rahul N. Manepalli ,  Ravindra V. Tanikella

IPC: H01L21/56

CPC classification number: H01L24/83 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/5387 ,  H01L24/29 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/07025 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A die-attach composition includes a resin such as a thermosetting resin, a hardener, and a low molecular weight oligomer diluent. A die-attach composition includes a polyimide in a major amount and a resin such as a thermosetting resin in a minor amount. The die-attach composition also includes a reactive polymer diluent. Combinations of the low molecular weight oligomer diluent and the reactive polymer diluent are included. The die-attach composition is applied to surface mount technology such as wire-bond dice. A computing system is also included that uses the die-attach composition.

Abstract translation: 模具附着组合物包括树脂如热固性树脂，硬化剂和低分子量低聚物稀释剂。 模具附着组合物包括主要量的聚酰亚胺和少量的热固性树脂等树脂。 模片附着组合物还包括反应性聚合物稀释剂。 包括低分子量低聚物稀释剂和反应性聚合物稀释剂的组合。 将芯片附着组合物应用于诸如引线键合芯片的表面贴装技术。 还包括使用芯片附着组合物的计算系统。