Abstract:
A method of producing a component of a composite of diamond and a binder, wherein a Hot Isostatic gas Pressure process (HIP) is used, includes the step of enclosing a de-bound green body having compacted diamond particles in an infiltrant. The method includes the further steps of enclosing the de-bound green body and the infiltrant in a Zr-capsule that has Zirconium as a main constituent and sealing the Zr-capsule, and applying a predetermined pressure-temperature cycle on the unit formed by the de-bound green body, infiltrant and capsule in which the infiltrant infiltrates the de-bound green body and the de-bound green body is further densified in the sense that the volume thereof is decreased.
Abstract:
A process of manufacturing cemented carbide and to a product obtained thereof, wherein hex doped WC is subjected to nitrogen before and/or during sintering.
Abstract:
A cutting tool made of a cemented carbide substrate of WC, a metallic binder phase and gamma phase is provided. The cemented carbide has a well distributed gamma phase and a reduced amount of abnormal WC grains. The cutting tool has a more predicted tool life and an increased resistance against plastic deformation.
Abstract:
A coated cutting tool of a cemented carbide substrate made of WC, a metallic binder phase and a gamma phase has a well distributed gamma phase and a reduced amount of abnormal WC grains. Further, the coated cutting tool is provided with a CVD coating of TiCN and an α-Al2O3 layer, wherein the α-Al2O3 layer exhibits a texture coefficient TC(0 0 12)≥7.2 and wherein in the ratio I(0 0 12)/I(0 1 14)≥1. The coated cutting tool has an increased resistance against plastic deformation. whilst maintaining toughness.
Abstract:
A rock drill button having a body of sintered cemented carbide that has hard constituents of tungsten carbide (WC) in a binder phase of Co, wherein the cemented carbide has 4-12 mass % Co and balance WC and unavoidable impurities. The cemented carbide also has Cr in such an amount that the Cr/Co ratio is within the range of 0.043-0.19, and that the WC grain size mean value is above 1.75 μm.
Abstract:
The present invention relates to a method of making a cemented carbide comprising mixing in a slurry a first powder fraction and a second powder fraction, subjecting the slurry to milling, drying, pressing and sintering. The first powder fraction is made from cemented carbide scrap recycled using the Zn recovery process, comprising the elements W, C, Co, and at least one or more of Ta, Ti, Nb, Cr, Zr, Hf and Mo, and the second powder fraction comprising virgin raw materials of WC and possibly carbides and/or carbonitrides of one or more of Cr, Zr, W, Ta, Ti, Hf and Nb. The first powder fraction is subjected to a pre-milling step, prior to the step of forming the slurry, to obtain an average grain size of between 0.2 to 1.5 μm.
Abstract:
The present disclosure relates to a cutting tool including a cemented carbide substrate having WC, gamma phase and a binder phase. The substrate is provided with a binder phase enriched surface zone, which is depleted of gamma phase, wherein no graphite and no ETA phase is present in the microstructure and wherein the binder phase is a high entropy alloy.
Abstract:
The present invention relates to a method of making a cemented carbide comprising mixing in a slurry a first powder fraction and a second powder fraction, subjecting the slurry to milling, drying, pressing and sintering. The first powder fraction is made from cemented carbide scrap recycled using the Zn recovery process, comprising the elements W, C, Co, and at least one or more of Ta, Ti, Nb, Cr, Zr, Hf and Mo, and the second powder fraction comprising virgin raw materials of WC and possibly carbides and/or carbonitrides of one or more of Cr, Zr, W, Ta, Ti, Hf and Nb. The first powder fraction is subjected to a pre-milling step, prior to the step of forming the slurry, to obtain an average grain size of between 0.2 to 1.5 μm.
Abstract:
The present invention relates to a diamond composite comprising diamond particles embedded in a binder matrix comprising SiC and a Mn+1AXn-phase, where no diamond-to-diamond bonding are present. For the Mn+1AXn-phase n=1-3, M is one or more elements selected from the group Sc, Ti, Zr, Hf, V, Nb, Ta, Cr and Mo, A is one or more elements selected from the group Al, Si, P, S, Ga, Ge, As, Cd, In, Sn, Tl, and Pb and X is carbon and/or nitrogen.