STACK REGISTER HAVING DIFFERENT FERROELECTRIC MEMORY ELEMENT CONSTRUCTIONS

    公开(公告)号:US20220350523A1

    公开(公告)日:2022-11-03

    申请号:US17730345

    申请日:2022-04-27

    Abstract: Apparatus and method for managing data in a processing system, such as but not limited to a data storage device such as a solid-state drive (SSD). A ferroelectric stack register memory has a first arrangement of ferroelectric memory cells (FMEs) of a first construction and a second arrangement of FMEs of a different, second construction arranged to provide respective cache lines for use by a controller, such as a programmable processor. A pointer mechanism is configured to provide pointers to point to each of the respective cache lines based on a time sequence of operation of the processor. Data sets can be migrated to the different arrangements by the controller as required based on the different operational characteristics of the respective FME constructions. The FMEs may be non-volatile and read-destructive. Refresh circuitry can be selectively enacted under different operational modes.

    Storage devices for external data acquisition

    公开(公告)号:US10861496B1

    公开(公告)日:2020-12-08

    申请号:US16451809

    申请日:2019-06-25

    Abstract: A system includes a system-on-a-chip integrated circuit and a preamplifier integrated circuit. The system-on-a-chip integrated circuit includes an interface configured to receive an analog sensor signal and a read/write channel configured to digitize the analog sensor signal. The preamplifier integrated circuit is communicatively coupled to the system-on-a-chip integrated circuit and is configured to amplify the analog sensor signal.

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