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    System with a SPAD-based semiconductor device having dark pixels for monitoring sensor parameters
    2.
    发明授权
    System with a SPAD-based semiconductor device having dark pixels for monitoring sensor parameters 有权

    公开(公告)号：US11221253B2

    公开(公告)日：2022-01-11

    申请号：US17247276

    申请日：2020-12-07

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Jan Ledvina ,  Ivan Koudar ,  Dariusz Piotr Palubiak

    IPC: G01J1/44

    Abstract: A semiconductor device may include a plurality of single-photon avalanche diodes (SPADs). The semiconductor device may include sensing single-photon avalanche diodes that are sensitive to incident light and dark single-photon avalanche diodes that are shielded from incident light. The dark single-photon avalanche diodes may be used to measure one or more parameters for the semiconductor device such as breakdown voltage, dark count rate, and quench resistance. Processing circuitry may optimize a bias voltage for the semiconductor device based on information regarding one or more sensor parameters obtained using the dark single-photon avalanche diodes.

    Imaging systems with single-photon avalanche diodes and ambient light level detection
    3.
    发明授权
    Imaging systems with single-photon avalanche diodes and ambient light level detection 有权

    公开(公告)号：US12085649B2

    公开(公告)日：2024-09-10

    申请号：US16948269

    申请日：2020-09-10

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Ivan Koudar ,  Jan Ledvina

    IPC: G01S17/89 ,  G01S7/4863 ,  G01S17/14

    CPC classification number: G01S17/89 ,  G01S7/4863 ,  G01S17/14

    Abstract: A light detection and ranging (LIDAR) imaging system may include a semiconductor device based on single-photon avalanche diodes (SPADs). The LIDAR imaging system may also include a light source configured to emit light such that the semiconductor device is exposed to both ambient light and a reflected version of the laser light. Ambient light level detection circuitry may be included to determine a brightness of the ambient light based on an output signal from the semiconductor device. The ambient light level detection circuitry may include a plurality of comparators that receive different reference signals and are coupled to respective counters. The results from the counters may be used to determine the brightness of the ambient light in the scene. The determined brightness may then be used to discriminate between the ambient light and the reflected version of the light.

    Piezo transducer controller and method having adaptively-tuned linear damping
    4.
    发明授权
    Piezo transducer controller and method having adaptively-tuned linear damping 有权

    公开(公告)号：US10585178B2

    公开(公告)日：2020-03-10

    申请号：US15207756

    申请日：2016-07-12

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Ivan Koudar ,  Jan Ledvina ,  Jiri Kutej ,  Pavel Horsky

    IPC: G01S1/72 ,  G01S7/524 ,  G01S7/52 ,  G01S15/10 ,  G01S15/931 ,  H01L41/04

    Abstract: An illustrative controller embodiment includes: a transmitter that causes reverberation of a piezoelectric transducer; and a linear damping module that measures characteristics of the reverberation and tunes at least one of a shunt resistance and a shunt reactance for the piezoelectric transducer based on said characteristics. An illustrative sensor embodiment includes: a piezoelectric transducer; and a transducer controller coupled to the piezoelectric transducer to transmit pulses and receive echoes for measuring distances. The controller includes a linear damping module with: a shunt resistance; a shunt inductance; and an optional switch that couples the shunt resistance and shunt inductance in parallel to the piezoelectric transducer to damp reverberation of the piezoelectric transducer after said transmit pulses. The controller measures at least one characteristic of said reverberation and responsively tunes the shunt resistance or the shunt inductance.

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