中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.018 seconds)

    Image sensors with in-pixel lens arrays
    3.
    发明授权
    Image sensors with in-pixel lens arrays 有权

    公开(公告)号：US10297629B2

    公开(公告)日：2019-05-21

    申请号：US15701116

    申请日：2017-09-11

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor Lenchenkov ,  Ulrich Boettiger

    IPC: H01L27/146 ,  H04N9/07 ,  H04N9/04 ,  H04N5/353 ,  H04N5/378 ,  G02B13/00 ,  G02B3/00

    Abstract: An image sensor may include an array of pixels. Pixels in the array may include a photodiode that converts incident light into electrical charge and a charge storage region for storing the electrical charge before it is read out from the pixel. Pixels in the array may include a microlens formed over the photodiode that directs light onto the photodiode. Pixels in the array may include an additional array of microlenses between the microlens and the photodiode. The additional array of microlenses may direct light away from the charge storage region to prevent charge stored at the charge storage region from being affected by light that is not incident upon the photodiode. The image sensor may be a backside illuminated image sensor that operates in a global shutter mode.

    Image sensors having buried light shields with antireflective coating
    5.
    发明授权
    Image sensors having buried light shields with antireflective coating 有权
    图像传感器具有防反射涂层的掩埋式防护罩

    公开(公告)号：US09041081B2

    公开(公告)日：2015-05-26

    申请号：US13964462

    申请日：2013-08-12

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Victor Lenchenkov

    IPC: H01L31/00 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629

    Abstract: An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures may be formed on the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shielding structures may be lined with absorptive antireflective coating material to prevent light from being reflected off the surface of the buried light shielding structures. Forming buried light shielding structures with absorptive antireflective coating material can help reduce optical pixel crosstalk and enhance global shutter efficiency.

    Abstract translation: 提供具有图像传感器像素阵列的图像传感器。 每个图像像素可以包括在半导体衬底中形成的光电二极管和相关联的像素电路。 可以在衬底上形成掩埋的光屏蔽结构，以防止形成在两个相邻光电二极管之间的衬底中的像素电路暴露于入射光。 掩埋的遮光结构可以衬有吸收性抗反射涂层材料，以防止光从掩埋的光屏蔽结构的表面反射出来。 用吸收性抗反射涂层材料形成掩埋的光屏蔽结构可以帮助减少光学像素串扰并增强全局快门效率。

    Optical touch screen system using radiation pattern sensing and method therefor
    6.
    发明授权
    Optical touch screen system using radiation pattern sensing and method therefor 有权

    公开(公告)号：US10310674B2

    公开(公告)日：2019-06-04

    申请号：US14806388

    申请日：2015-07-22

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Terry Gilton ,  Victor Lenchenkov ,  Brian W. Keelan

    IPC: G06F3/042 ,  G06F3/041

    Abstract: In one form, a touch screen includes an optically transmissive medium, first and second light sources, a detection circuit, and a control circuit. The first light source is positioned to emit light across the optically transmissive medium in a first direction, and the second light source is positioned to emit light across the optically transmissive medium in a second direction orthogonal to the first direction. The detection circuit detects standing wave patterns of light emitted by the first and second light sources along the first and second directions. The control circuit is coupled to the detection circuit and measures a first standing wave pattern in an untouched condition, and a second standing wave pattern in a touched condition. The control circuit detects a touch location in response to a difference between the first standing wave pattern and the second standing wave pattern.

    Image sensors with voltage-biased trench isolation structures
    8.
    发明授权
    Image sensors with voltage-biased trench isolation structures 有权
    具有电压偏置沟槽隔离结构的图像传感器

    公开(公告)号：US09584744B2

    公开(公告)日：2017-02-28

    申请号：US14747021

    申请日：2015-06-23

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor Lenchenkov ,  Hamid Soleimani

    IPC: H04N5/359 ,  H04N5/225 ,  H01L27/146

    CPC classification number: H04N5/359 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H04N5/2254

    Abstract: An image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode, a storage diode, and associated circuitry formed in a semiconductor substrate. Buried light shields may be formed on the substrate to prevent regions between two adjacent photodiodes from being exposed to incoming light. In one embodiment, a shallow trench isolation (STI) structure may be formed between the photodiode and the storage diode, and a conductive layer formed from optically absorptive material may be constructed at the bottom of the STI structure. A via may be formed through the STI structure to help bias the conductive layer using a ground or negative voltage. In another embodiment, an isolation ring structure may be formed at the base of the buried light shields. The isolation ring structure may be formed from optically absorptive material and can optionally be biased using a ground or negative voltage.

    Abstract translation: 提供具有图像传感器像素阵列的图像传感器。 每个像素可以包括形成在半导体衬底中的光电二极管，存储二极管和相关电路。 可以在衬底上形成掩埋的光屏蔽，以防止两个相邻光电二极管之间的区域暴露于入射光。 在一个实施例中，可以在光电二极管和存储二极管之间形成浅沟槽隔离（STI）结构，并且可以在STI结构的底部构造由光学吸收材料形成的导电层。 可以通过STI结构形成通孔，以帮助使用接地或负电压来偏置导电层。 在另一个实施例中，隔离环结构可以形成在掩埋的光罩的底部。 隔离环结构可以由光学吸收材料形成，并且可以可选地使用接地或负电压进行偏置。

    Image sensors with inter-pixel light blocking structures
    9.
    发明授权
    Image sensors with inter-pixel light blocking structures 有权
    具有像素间阻挡结构的图像传感器

    公开(公告)号：US09305952B2

    公开(公告)日：2016-04-05

    申请号：US14469498

    申请日：2014-08-26

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Victor Lenchenkov ,  Xianmin Yi

    IPC: H01L27/146 ,  H01L31/0216 ,  H04N5/369

    CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02168 ,  H04N5/369

    Abstract: An image sensor with an array of image sensor pixels is provided. Each pixel may include a photodiode and associated pixel circuits formed in a semiconductor substrate. Buried light shields may be formed on the substrate to present pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. Metal interconnect muting structures may be formed over the buried light shields. In one embodiment, light blocking structures may be formed to completely seal the interconnect routing structures. The light blocking structures may be formed on top of the buried light shields or on the surface of the substrate. In another embodiment, planar light blocking structures that are parallel to the surface of the substrate may be formed between metal routing layers to help absorb stray light. Light blocking structures formed in these ways can help reduce optical crosstalk and enhance global shutter efficiency.

    Abstract translation: 提供具有图像传感器像素阵列的图像传感器。 每个像素可以包括形成在半导体衬底中的光电二极管和相关联的像素电路。 可以在衬底上形成掩埋的光屏蔽，以呈现形成在两个相邻光电二极管之间的衬底中的像素电路，以暴露于入射光。 金属互连静电结构可以形成在掩埋的光屏蔽上。 在一个实施例中，可以形成遮光结构以完全密封互连路由结构。 遮光结构可以形成在掩埋的光屏蔽的顶部或基板的表面上。 在另一个实施例中，平行于衬底表面的平面光阻结构可以形成在金属布线层之间，以帮助吸收杂散光。 以这些方式形成的遮光结构可以帮助减少光学串扰并增强全局快门效率。

    IMAGING SYSTEMS WITH INFRARED PIXELS HAVING INCREASED QUANTUM EFFICIENCY
    10.
    发明申请
    IMAGING SYSTEMS WITH INFRARED PIXELS HAVING INCREASED QUANTUM EFFICIENCY 有权
    具有增加量子效率的红外像素的成像系统

    公开(公告)号：US20150228689A1

    公开(公告)日：2015-08-13

    申请号：US14178066

    申请日：2014-02-11

    Applicant: Semiconductor Components Industries, LLC

    Inventor： Victor Lenchenkov

    IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/028

    CPC classification number: H01L27/14649 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14645 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/028

    Abstract: An imaging device may include an image sensor having an array of image pixels. The array of image pixels may include one or more infrared pixels that are configured to detect infrared light. The infrared pixels may include reflective structures for increasing quantum efficiency in the infrared spectral range. The reflective structures may include first and second parallel structures formed on opposing sides of a photodiode in an infrared pixel. The reflective structures may be partially transparent to infrared light and non-transparent to visible light. The reflective structures may form an optical cavity so that infrared light that enters an infrared pixel is reflected back and forth between the reflective structures until it is absorbed by the photodiode in the infrared pixel. Reflective structures may also be formed between infrared filters and color filters to suppress optical crosstalk between infrared pixels and color pixels.

    Abstract translation: 成像装置可以包括具有图像像素阵列的图像传感器。 图像像素阵列可以包括被配置为检测红外光的一个或多个红外像素。 红外像素可以包括用于在红外光谱范围内增加量子效率的反射结构。 反射结构可以包括形成在红外像素中的光电二极管的相对侧上的第一和第二平行结构。 反射结构可以对于红外光部分透明，对可见光不透明。 反射结构可以形成光腔，使得进入红外像素的红外光在反射结构之间来回反射，直到其被红外像素中的光电二极管吸收。 也可以在红外滤光器和滤色器之间形成反射结构，以抑制红外像素和彩色像素之间的光学串扰。

Patent Agency Ranking