公开(公告)号：US20140175372A1

公开(公告)日：2014-06-26

申请号：US13723413

申请日：2012-12-21

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L31/0224 ,  H01L33/42

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Abstract translation: 半导体纳米线器件包括至少一个具有底表面和顶表面的半导体纳米线，围绕半导体纳米线的绝缘材料以及欧姆接触半导体纳米线的顶表面的电极。 电极与半导体纳米线的半导体材料的接触由与半导体纳米线的顶表面的接触所支配。

公开(公告)号：US09818830B2

公开(公告)日：2017-11-14

申请号：US15221811

申请日：2016-07-28

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L29/41 ,  H01L33/38 ,  H01L31/0224 ,  H01L33/42 ,  H01L33/16 ,  H01L31/0352 ,  H01L31/0735 ,  H01L31/18 ,  H01L21/02 ,  H01L29/06 ,  H01L31/042 ,  H01L33/02 ,  H01L21/311 ,  H01L27/15 ,  H01L21/3213 ,  H01L29/20

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

公开(公告)号：US20160336411A1

公开(公告)日：2016-11-17

申请号：US15221811

申请日：2016-07-28

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L29/41 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

公开(公告)号：US09419086B2

公开(公告)日：2016-08-16

申请号：US14671666

申请日：2015-03-27

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L29/41 ,  H01L33/38 ,  H01L31/0224 ,  H01L33/42 ,  H01L33/16 ,  H01L31/0352 ,  H01L31/0735 ,  H01L31/18 ,  H01L21/02 ,  H01L29/06 ,  H01L31/042 ,  H01L33/02 ,  H01L27/15

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

公开(公告)号：US20150200262A1

公开(公告)日：2015-07-16

申请号：US14671666

申请日：2015-03-27

Applicant: SOL VOLTAICS AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L29/41 ,  H01L21/02 ,  H01L33/42 ,  H01L33/02 ,  H01L31/0224 ,  H01L29/06 ,  H01L31/042

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Abstract translation: 半导体纳米线器件包括至少一个具有底表面和顶表面的半导体纳米线，围绕半导体纳米线的绝缘材料以及欧姆接触半导体纳米线的顶表面的电极。 电极与半导体纳米线的半导体材料的接触由与半导体纳米线的顶表面的接触所支配。

公开(公告)号：US09012883B2

公开(公告)日：2015-04-21

申请号：US13723413

申请日：2012-12-21

Applicant: Sol Voltaics AB

Inventor： Ingvar Åberg ,  Martin Magnusson ,  Damir Asoli ,  Lars Ivar Samuelson ,  Jonas Ohlsson

IPC: H01L29/06 ,  H01L31/0224 ,  H01L33/38 ,  H01L33/42 ,  H01L33/16 ,  H01L27/15

CPC classification number: H01L29/413 ,  H01L21/02164 ,  H01L21/02205 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02603 ,  H01L21/31116 ,  H01L21/32134 ,  H01L27/15 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/20 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/042 ,  H01L31/0735 ,  H01L31/1852 ,  H01L33/02 ,  H01L33/16 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S977/932 ,  H01L2924/00

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Abstract translation: 半导体纳米线器件包括至少一个具有底表面和顶表面的半导体纳米线，围绕半导体纳米线的绝缘材料以及欧姆接触半导体纳米线的顶表面的电极。 电极与半导体纳米线的半导体材料的接触由与半导体纳米线的顶表面的接触所支配。