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公开(公告)号：US09574286B2
公开(公告)日：2017-02-21
申请号：US14403427
申请日：2013-05-24
Applicant: SOL VOLTAICS AB
Inventor： Greg Alcott , Martin Magnusson , Olivier Postel , Knut Deppert , Lars Samuelson , Jonas Ohlsson
CPC classification number: C30B25/14 , C23C16/301 , C23C16/45504 , C23C16/45519 , C30B11/003 , C30B11/006 , C30B11/12 , C30B23/007 , C30B25/005 , C30B25/025 , C30B29/06 , C30B29/40 , C30B29/403 , C30B29/42 , C30B29/60 , C30B29/62 , Y10T117/102
Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.
Abstract translation: 一种气相纳米线生长装置，包括反应室（200），第一输入端和第二输入端（202B，202A）。 所述第一输入同心地位于所述第二输入内，并且所述第一和第二输入被配置为使得从所述第二输入端递送的第二流体在从所述第一输入端输送的第一流体与所述反应室的壁之间提供护套。 可以使用催化剂颗粒的气溶胶来生长纳米线。
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公开(公告)号：US20140175372A1
公开(公告)日：2014-06-26
申请号：US13723413
申请日：2012-12-21
Applicant: SOL VOLTAICS AB
Inventor： Ingvar Åberg , Martin Magnusson , Damir Asoli , Lars Ivar Samuelson , Jonas Ohlsson
IPC: H01L31/0224 , H01L33/42
CPC classification number: H01L29/413 , H01L21/02164 , H01L21/02205 , H01L21/02214 , H01L21/0228 , H01L21/02603 , H01L21/31116 , H01L21/32134 , H01L27/15 , H01L29/0669 , H01L29/0676 , H01L29/20 , H01L31/022466 , H01L31/035227 , H01L31/042 , H01L31/0735 , H01L31/1852 , H01L33/02 , H01L33/16 , H01L33/38 , H01L33/385 , H01L33/42 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , Y10S977/932 , H01L2924/00
Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
Abstract translation: 半导体纳米线器件包括至少一个具有底表面和顶表面的半导体纳米线，围绕半导体纳米线的绝缘材料以及欧姆接触半导体纳米线的顶表面的电极。 电极与半导体纳米线的半导体材料的接触由与半导体纳米线的顶表面的接触所支配。
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公开(公告)号：US20200032416A1
公开(公告)日：2020-01-30
申请号：US16250191
申请日：2019-01-17
Applicant: SOL VOLTAICS AB
Inventor： Greg Alcott , Martin Magnusson , Olivier Postel , Knut Deppert , Lars Samuelson , Jonas Ohlsson
IPC: C30B25/14 , C30B23/00 , C30B29/60 , C30B25/02 , C30B29/06 , C30B29/40 , C30B25/00 , C30B11/00 , C30B11/12 , C30B29/62 , C23C16/30 , C23C16/455 , C30B29/42
Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber
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公开(公告)号：US20170198409A1
公开(公告)日：2017-07-13
申请号：US15410078
申请日：2017-01-19
Applicant: SOL VOLTAICS AB
Inventor： Greg Alcott , Martin Magnusson , Olivier Postel , Knut Deppert , Lars Samuelson , Jonas Ohlsson
CPC classification number: C30B25/14 , C23C16/301 , C23C16/45504 , C23C16/45519 , C30B11/003 , C30B11/006 , C30B11/12 , C30B23/007 , C30B25/005 , C30B25/025 , C30B29/06 , C30B29/40 , C30B29/403 , C30B29/42 , C30B29/60 , C30B29/62 , Y10T117/102
Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires
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公开(公告)号：US10196755B2
公开(公告)日：2019-02-05
申请号：US15410078
申请日：2017-01-19
Applicant: SOL VOLTAICS AB
Inventor： Greg Alcott , Martin Magnusson , Olivier Postel , Knut Deppert , Lars Samuelson , Jonas Ohlsson
IPC: C30B25/00 , C30B25/14 , C30B23/00 , C30B25/02 , C30B29/06 , C30B29/40 , C30B11/00 , C30B11/12 , C30B29/62 , C30B29/60 , C23C16/30 , C23C16/455 , C30B29/42
Abstract: A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.
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Patent Agency Ranking
公开(公告)号：US09818830B2
公开(公告)日：2017-11-14
申请号：US15221811
申请日：2016-07-28
Applicant: SOL VOLTAICS AB
Inventor： Ingvar Åberg , Martin Magnusson , Damir Asoli , Lars Ivar Samuelson , Jonas Ohlsson
IPC: H01L29/41 , H01L33/38 , H01L31/0224 , H01L33/42 , H01L33/16 , H01L31/0352 , H01L31/0735 , H01L31/18 , H01L21/02 , H01L29/06 , H01L31/042 , H01L33/02 , H01L21/311 , H01L27/15 , H01L21/3213 , H01L29/20
CPC classification number: H01L29/413 , H01L21/02164 , H01L21/02205 , H01L21/02214 , H01L21/0228 , H01L21/02603 , H01L21/31116 , H01L21/32134 , H01L27/15 , H01L29/0669 , H01L29/0676 , H01L29/20 , H01L31/022466 , H01L31/035227 , H01L31/042 , H01L31/0735 , H01L31/1852 , H01L33/02 , H01L33/16 , H01L33/38 , H01L33/385 , H01L33/42 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , Y10S977/932 , H01L2924/00
Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
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公开(公告)号：US20160336411A1
公开(公告)日：2016-11-17
申请号：US15221811
申请日：2016-07-28
Applicant: SOL VOLTAICS AB
Inventor： Ingvar Åberg , Martin Magnusson , Damir Asoli , Lars Ivar Samuelson , Jonas Ohlsson
IPC: H01L29/41 , H01L21/02 , H01L21/311 , H01L29/06
CPC classification number: H01L29/413 , H01L21/02164 , H01L21/02205 , H01L21/02214 , H01L21/0228 , H01L21/02603 , H01L21/31116 , H01L21/32134 , H01L27/15 , H01L29/0669 , H01L29/0676 , H01L29/20 , H01L31/022466 , H01L31/035227 , H01L31/042 , H01L31/0735 , H01L31/1852 , H01L33/02 , H01L33/16 , H01L33/38 , H01L33/385 , H01L33/42 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , Y10S977/932 , H01L2924/00
Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
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公开(公告)号：US09419086B2
公开(公告)日：2016-08-16
申请号：US14671666
申请日：2015-03-27
Applicant: SOL VOLTAICS AB
Inventor： Ingvar Åberg , Martin Magnusson , Damir Asoli , Lars Ivar Samuelson , Jonas Ohlsson
IPC: H01L29/41 , H01L33/38 , H01L31/0224 , H01L33/42 , H01L33/16 , H01L31/0352 , H01L31/0735 , H01L31/18 , H01L21/02 , H01L29/06 , H01L31/042 , H01L33/02 , H01L27/15
CPC classification number: H01L29/413 , H01L21/02164 , H01L21/02205 , H01L21/02214 , H01L21/0228 , H01L21/02603 , H01L21/31116 , H01L21/32134 , H01L27/15 , H01L29/0669 , H01L29/0676 , H01L29/20 , H01L31/022466 , H01L31/035227 , H01L31/042 , H01L31/0735 , H01L31/1852 , H01L33/02 , H01L33/16 , H01L33/38 , H01L33/385 , H01L33/42 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , Y10S977/932 , H01L2924/00
Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
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公开(公告)号：US20150200262A1
公开(公告)日：2015-07-16
申请号：US14671666
申请日：2015-03-27
Applicant: SOL VOLTAICS AB
Inventor： Ingvar Åberg , Martin Magnusson , Damir Asoli , Lars Ivar Samuelson , Jonas Ohlsson
IPC: H01L29/41 , H01L21/02 , H01L33/42 , H01L33/02 , H01L31/0224 , H01L29/06 , H01L31/042
CPC classification number: H01L29/413 , H01L21/02164 , H01L21/02205 , H01L21/02214 , H01L21/0228 , H01L21/02603 , H01L21/31116 , H01L21/32134 , H01L27/15 , H01L29/0669 , H01L29/0676 , H01L29/20 , H01L31/022466 , H01L31/035227 , H01L31/042 , H01L31/0735 , H01L31/1852 , H01L33/02 , H01L33/16 , H01L33/38 , H01L33/385 , H01L33/42 , H01L2924/0002 , Y02E10/544 , Y02P70/521 , Y10S977/932 , H01L2924/00
Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
Abstract translation: 半导体纳米线器件包括至少一个具有底表面和顶表面的半导体纳米线，围绕半导体纳米线的绝缘材料以及欧姆接触半导体纳米线的顶表面的电极。 电极与半导体纳米线的半导体材料的接触由与半导体纳米线的顶表面的接触所支配。
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公开(公告)号：US20150152570A1
公开(公告)日：2015-06-04
申请号：US14403427
申请日：2013-05-24
Applicant: SOL VOLTAICS AB
Inventor： Greg Alcott , Martin Magnusson , Olivier Postel , Knut Deppert , Lars Samuelson , Jonas Ohlsson
CPC classification number: C30B25/14 , C23C16/301 , C23C16/45504 , C23C16/45519 , C30B11/003 , C30B11/006 , C30B11/12 , C30B23/007 , C30B25/005 , C30B25/025 , C30B29/06 , C30B29/40 , C30B29/403 , C30B29/42 , C30B29/60 , C30B29/62 , Y10T117/102
Abstract: A gas phase nanowire growth apparatus including a reaction chamber (200), a first input and a second input (202 B, 202 A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires
Abstract translation: 一种气相纳米线生长装置，包括反应室（200），第一输入端和第二输入端（202B，202A）。 所述第一输入同心地位于所述第二输入内，并且所述第一和第二输入被配置为使得从所述第二输入端递送的第二流体在从所述第一输入端输送的第一流体与所述反应室的壁之间提供护套。 可以使用催化剂颗粒的气溶胶来生长纳米线
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