公开(公告)号：US20230094925A1

公开(公告)日：2023-03-30

申请号：US17994022

申请日：2022-11-25

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/786 ,  H01L21/02 ,  H01L23/15

Abstract: Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R′ having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R′ as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R′ doping can be achieved. Compared with single rare-earth element R′ doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.

公开(公告)号：US11545581B2

公开(公告)日：2023-01-03

申请号：US17158026

申请日：2021-01-26

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/66 ,  H01L29/786

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R′ into an indium-containing MO semiconductor to form an InxMyRnR′mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

公开(公告)号：US11545580B2

公开(公告)日：2023-01-03

申请号：US17105655

申请日：2020-11-27

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (In2O3)x(MO)y(RO)z semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.