公开(公告)号：US20230087472A1

公开(公告)日：2023-03-23

申请号：US17798539

申请日：2020-07-22

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Lei Zhou ,  Min Li ,  Hongmeng Li ,  Hua Xu ,  Zikai Chen ,  Jianhua Zou ,  Lei Wang ,  Junbiao Peng ,  Hong Tao

IPC: G09G3/32

Abstract: Disclosed are to a pixel circuit, a method for driving the pixel circuit and a display panel. The pixel circuit includes a data write module, a storage module, a drive module and a light emitting device. The drive module includes a first control terminal and a second control terminal. The data write module is configured to write, at a data write stage, a data signal into the first control terminal of the drive module, the storage module is configured to maintain a potential of the first control terminal, the second control terminal is electrically connected to a pulse-width modulation (PWM) signal input terminal of the pixel circuit, and is configured to control the drive module to provide discontinuous drive current according to a PWM signal from the PWM signal input terminal at a light emission stage, and the light emitting device emits light in response to the discontinuous drive current.

公开(公告)号：US11545581B2

公开(公告)日：2023-01-03

申请号：US17158026

申请日：2021-01-26

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/66 ,  H01L29/786

Abstract: The present invention discloses a metal oxide (MO) semiconductor, which is implemented by respectively doping at least an oxide of rare earth element R and an oxide of rare earth element R′ into an indium-containing MO semiconductor to form an InxMyRnR′mOz semiconductor. According to the present invention, the extremely high oxygen bond breaking energy in the oxide of rare earth element R is used to effectively control the carrier concentration in the semiconductor, and a charge transportation center can be formed by using the characteristic that the radius of rare earth ions is equivalent to the radius of indium ions, so that the electrical stability of the semiconductor is improved. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.

公开(公告)号：US20180138037A1

公开(公告)日：2018-05-17

申请号：US15574154

申请日：2017-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Liangchen Yan ,  Guangcai Yuan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/443

CPC classification number: H01L21/02565 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/443 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.

公开(公告)号：US11677031B2

公开(公告)日：2023-06-13

申请号：US16529833

申请日：2019-08-02

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/78 ,  H01L29/786 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L29/78693 ,  H01L21/02266 ,  H01L21/02581 ,  H01L21/30604

Abstract: The present application discloses an oxide semiconductor thin-film and a thin-film transistor consisted thereof. The oxide semiconductor thin-film is fabricated by doping a certain amount of rare-earth oxide (RO) as light stabilizer to metal oxide (MO) semiconductor. The thin-film transistor comprising a gate electrode, a channel layer consisted by the oxide semiconductor thin-film, a source and drain electrode; the thin-film transistor employing etch-stop structure, a back-channel etch structure or a top-gate self-alignment structure.

公开(公告)号：US10141340B2

公开(公告)日：2018-11-27

申请号：US15108678

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/14 ,  H01L27/15 ,  H01L27/12 ,  H01L21/28 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

Abstract: In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

公开(公告)号：US09806097B2

公开(公告)日：2017-10-31

申请号：US15038127

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869

Abstract: A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.

公开(公告)号：US20230094925A1

公开(公告)日：2023-03-30

申请号：US17994022

申请日：2022-11-25

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Miao Xu ,  Hua Xu ,  Min Li ,  Junbiao Peng ,  Lei Wang ,  Jian Hua Zou ,  Hong Tao

IPC: H01L29/786 ,  H01L21/02 ,  H01L23/15

Abstract: Disclosed in the present invention is a rare-earth doped semiconductor material. Compounds of two rare-earth elements R and R′ having different functions are introduced into an indium oxide containing material. The coupling of R element ions to an O2p orbit can effectively enhance the transfer efficiency of the rare-earth R′ as a photogenerated electron transfer center, such that the light stability of a device with a small amount of R′ doping can be achieved. Compared with single rare-earth element R′ doping, due to less doping, the impact on a mobility is less, such that higher mobility and light stability devices can be obtained. Further provided in the present invention is a semiconductor-based thin-film transistor, and an application.

公开(公告)号：US10262860B2

公开(公告)日：2019-04-16

申请号：US15741737

申请日：2017-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Liangchen Yan ,  Xiaoguang Xu ,  Linfeng Lan ,  Lei Wang ,  Junbiao Peng

IPC: H01L21/027 ,  H01L21/02 ,  H01L29/417 ,  H01L27/12 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.

公开(公告)号：US11984510B2

公开(公告)日：2024-05-14

申请号：US16678173

申请日：2019-11-08

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/247 ,  H01L29/6675

Abstract: The present application discloses a composite metal oxide semiconductor which is a metal oxide semiconductor doped with a rare earth oxide. Even doping the praseodymium oxide or ytterbium oxide at a small doping amount, oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also disclose the thin-film transistors made thereof the composite metal oxide semiconductor and its application.

公开(公告)号：US11894467B2

公开(公告)日：2024-02-06

申请号：US16678116

申请日：2019-11-08

Applicant: South China University of Technology

Inventor： Miao Xu ,  Hua Xu ,  Weijing Wu ,  Weifeng Chen ,  Lei Wang ,  Junbiao Peng

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/6675

Abstract: The present application discloses a doped metal oxide semiconductor which is an indium tin oxide or indium tin zinc oxide semiconductor doped with a rare earth oxide. Even at a small doping amount, the oxygen vacancies could be suppressed as well as the mobility be maintained; critically, the thin-films made thereof can avoid the influence of light on I-V characteristics and stability, which results in great improvement of the stability under illumination of metal oxide semiconductor devices. The present application also discloses the thin-film transistors made thereof the doped metal oxide semiconductor and its application.