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1.发明授权Semiconductor device and method of calibrating warpage testing system to accurately measure semiconductor package warpage 有权半导体器件和校准翘曲测试系统的方法，以准确测量半导体封装翘曲公开(公告)号：US09279673B2
公开(公告)日：2016-03-08
申请号：US13846593
申请日：2013-03-18
Applicant: STATS ChipPAC, Ltd.
Inventor： WonJun Ko , SeungYong Chai , OhHan Kim , GwangTae Kim , Kenny Lee
CPC classification number: G01B11/306 , H01L22/12
Abstract: A warpage test system uses a calibration block to calibrate the warpage test system over a temperature profile. The calibration block includes a first metal block bonded to a second metal block. The first metal block includes a first metal and a second different metal. The first metal block includes a CTE different than a CTE of the second metal block. The calibration block is disposed in the warpage test system. A warpage of the calibration block is measured over a temperature profile ranging from 28° C. to 260° C. A deviation between the measured warpage of the calibration block and a known thermal expansion of the calibration block over the temperature profile is recorded. The warpage measurement in a semiconductor package is compensated by the deviation between the measured warpage of the calibration block and the known thermal expansion or warpage of the calibration block over the temperature profile.
Abstract translation: 翘曲测试系统使用校准块在温度曲线上校准翘曲测试系统。 校准块包括结合到第二金属块的第一金属块。 第一金属块包括第一金属和第二不同的金属。 第一金属块包括与第二金属块的CTE不同的CTE。 校准块设置在翘曲测试系统中。 在28℃至260℃的温度曲线上测量校准块的翘曲。记录校准块的测量翘曲与校准块在温度曲线上的已知热膨胀之间的偏差。 半导体封装中的翘曲测量通过校准块的测量翘曲与校准块在温度曲线上的已知热膨胀或翘曲之间的偏差来补偿。
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2.发明申请Semiconductor Device and Method of Calibrating Warpage Testing System to Accurately Measure Semiconductor Package Warpage 有权半导体器件和校准翘曲测试系统的方法，准确测量半导体封装翘曲公开(公告)号：US20140269810A1
公开(公告)日：2014-09-18
申请号：US13846593
申请日：2013-03-18
Applicant: STATS CHIPPAC, LTD.
Inventor： WonJun Ko , SeungYong Chai , OhHan Kim , GwangTae Kim , Kenny Lee
IPC: G01N25/72
CPC classification number: G01B11/306 , H01L22/12
Abstract: A warpage test system uses a calibration block to calibrate the warpage test system over a temperature profile. The calibration block includes a first metal block bonded to a second metal block. The first metal block includes a first metal and a second different metal. The first metal block includes a CTE different than a CTE of the second metal block. The calibration block is disposed in the warpage test system. A warpage of the calibration block is measured over a temperature profile ranging from 28° C. to 260° C. A deviation between the measured warpage of the calibration block and a known thermal expansion of the calibration block over the temperature profile is recorded. The warpage measurement in a semiconductor package is compensated by the deviation between the measured warpage of the calibration block and the known thermal expansion or warpage of the calibration block over the temperature profile.
Abstract translation: 翘曲测试系统使用校准块在温度曲线上校准翘曲测试系统。 校准块包括结合到第二金属块的第一金属块。 第一金属块包括第一金属和第二不同的金属。 第一金属块包括与第二金属块的CTE不同的CTE。 校准块设置在翘曲测试系统中。 在28℃至260℃的温度曲线上测量校准块的翘曲。记录校准块的测量翘曲与校准块在温度曲线上的已知热膨胀之间的偏差。 半导体封装中的翘曲测量通过校准块的测量翘曲与校准块在温度曲线上的已知热膨胀或翘曲之间的偏差来补偿。
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