公开(公告)号：US20140327107A1

公开(公告)日：2014-11-06

申请号：US14332631

申请日：2014-07-16

Applicant: STATS ChipPAC, Ltd.

Inventor： Meenakshi Padmanathan ,  Seung Wook Yoon ,  YongTaek Lee

IPC: H01L49/02

CPC classification number: H01L28/10 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/66 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties.

Abstract translation: 半导体器件具有形成在衬底中的沟槽。 沟槽具有锥形侧壁，深度为10-120微米。 第一绝缘层保形地施加在衬底上并进入沟槽。 诸如聚合物的绝缘材料沉积在沟槽中的第一绝缘层上。 绝缘材料上形成第一导电层。 在第一绝缘层和第一导电层上形成第二绝缘层。 第二导电层形成在第二绝缘层上并与第一导电层电接触。 第一和第二导电层通过沟槽中的绝缘材料与衬底隔离。 在第二绝缘层和第二导电层上形成第三绝缘层。 第一和第二导电层被卷绕在衬底上以呈现感应性质。

公开(公告)号：US09704857B2

公开(公告)日：2017-07-11

申请号：US13678134

申请日：2012-11-15

Applicant: STATS ChipPAC, Ltd.

Inventor： HyunTai Kim ,  YongTaek Lee ,  Gwang Kim ,  ByungHoon Ahn ,  Kai Liu

IPC: H01G9/00 ,  H01L21/00 ,  H01L27/06 ,  H01L21/56 ,  H01L23/31 ,  H01L23/64 ,  H01L23/66 ,  H01L27/01 ,  H01L49/02 ,  H01L27/08 ,  H01L23/00

CPC classification number: H01L27/0676 ,  H01L21/56 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L27/016 ,  H01L27/0805 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6677 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.

公开(公告)号：US09640603B2

公开(公告)日：2017-05-02

申请号：US14332631

申请日：2014-07-16

Applicant: STATS ChipPAC, Ltd.

Inventor： Meenakshi Padmanathan ,  Seung Wook Yoon ,  YongTaek Lee

IPC: H01L49/02 ,  H01L23/522 ,  H01L23/66

CPC classification number: H01L28/10 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/66 ,  H01L2224/0554 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A semiconductor device has a trench formed in a substrate. The trench has tapered sidewalls and depth of 10-120 micrometers. A first insulating layer is conformally applied over the substrate and into the trench. An insulating material, such as polymer, is deposited over the first insulating layer in the trench. A first conductive layer is formed over the insulating material. A second insulating layer is formed over the first insulating layer and first conductive layer. A second conductive layer is formed over the second insulating layer and electrically contacts the first conductive layer. The first and second conductive layers are isolated from the substrate by the insulating material in the trench. A third insulating layer is formed over the second insulating layer and second conductive layer. The first and second conductive layers are coiled over the substrate to exhibit inductive properties.

公开(公告)号：US20130069197A1

公开(公告)日：2013-03-21

申请号：US13678134

申请日：2012-11-15

Applicant: Stats ChipPac, Ltd.

Inventor： HyunTai Kim ,  YongTaek Lee ,  Gwang Kim ,  ByungHoon Ahn ,  Kai Liu

IPC: H01L27/06 ,  H01L27/08

CPC classification number: H01L27/0676 ,  H01L21/56 ,  H01L21/563 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/642 ,  H01L23/645 ,  H01L23/66 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L27/016 ,  H01L27/0805 ,  H01L28/10 ,  H01L28/40 ,  H01L2223/6677 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor device has a substrate and RF FEM formed over the substrate. The RF FEM includes an LC low-pass filter having an input coupled for receiving a transmit signal. A Tx/Rx switch has a first terminal coupled to an output of the LC filter. A diplexer has a first terminal coupled to a second terminal of the Tx/Rx switch and a second terminal for providing an RF signal. An IPD band-pass filter has an input coupled to a third terminal of the Tx/Rx switch and an output providing a receive signal. The LC filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The IPD filter includes conductive traces wound to exhibit inductive and mutual inductive properties and capacitors coupled to the conductive traces. The RF FEM substrate can be stacked over a semiconductor package containing an RF transceiver.

Abstract translation: 半导体器件具有在衬底上形成的衬底和RF FEM。 RF FEM包括具有耦合用于接收发射信号的输入的LC低通滤波器。 Tx / Rx开关具有耦合到LC滤波器的输出的第一端子。 双工器具有耦合到Tx / Rx开关的第二端子的第一端子和用于提供RF信号的第二端子。 IPD带通滤波器具有耦合到Tx / Rx开关的第三端子的输入端和提供接收信号的输出端。 LC滤波器包括缠绕的导电迹线以显示感应和互感特性以及耦合到导电迹线的电容器。 IPD滤波器包括缠绕的导电迹线以显示感应和互感特性以及耦合到导电迹线的电容器。 RF FEM衬底可以堆叠在包含RF收发器的半导体封装上。