Selective EMI Shielding Using Preformed Mask

    公开(公告)号:US20220157739A1

    公开(公告)日:2022-05-19

    申请号:US16950295

    申请日:2020-11-17

    Abstract: A semiconductor package has a substrate, a first component disposed over the substrate, an encapsulant deposited over the first component, and a second component disposed over the substrate outside the encapsulant. A metal mask is disposed over the second component. A shielding layer is formed over the semiconductor package. The metal mask after forming the shielding layer. The shielding layer is optionally formed on a contact pad of the substrate while a conic area above the contact pad that extends 40 degrees from vertical remains free of the encapsulant and metal mask while forming the shielding layer. Surfaces of the metal mask and encapsulant oriented toward the contact pad can be sloped. The metal mask can be disposed and removed using a pick-and-place machine.

    Semiconductor device and method of forming SIP with electrical component terminals extending out from encapsulant

    公开(公告)号:US10418341B2

    公开(公告)日:2019-09-17

    申请号:US15686584

    申请日:2017-08-25

    Abstract: A semiconductor device has a carrier with an adhesive layer formed over the carrier. Alignment marks are provided for picking and placing the electrical component on the carrier or adhesive layer. An electrical component is disposed on the adhesive layer by pressing terminals of the electrical component into the adhesive layer. The electrical component can be a semiconductor die, discrete component, electronic module, and semiconductor package. A leadframe is disposed over the adhesive layer. A shielding layer is formed over the electrical component. An encapsulant is deposited over the electrical component. The carrier and adhesive layer are removed so that the terminals of the electrical component extend out from the encapsulant for electrical interconnect. A substrate includes a plurality of conductive traces. The semiconductor device is disposed on the substrate with the terminals of the electrical component in contact with the conductive traces.

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