公开(公告)号：US11450133B2

公开(公告)日：2022-09-20

申请号：US16824475

申请日：2020-03-19

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Doo Na Kim ,  Ji Yeong Shin ,  Yong Su Lee ,  Jae Hwan Chu ,  Ki Seok Choi

IPC: G06V40/13 ,  G06F3/043 ,  G01B17/00 ,  H01L41/08 ,  G06F3/041 ,  H01L27/32 ,  G01B17/06 ,  G01B17/08

Abstract: An ultrasonic sensing device includes: a sensing layer between a driving electrode and a sensing electrode, a double-gated first transistor connected to a selection line and the sensing electrode, and may further include a sensed voltage storing capacitor having an electrode on the same layers as the first transistor. The configuration as a double gated transistor of a pixel sensor and the placement of one of the capacitor electrodes on the same layer can each reduce the size of the pixel sensor. The ultrasonic sensing device may be utilized as a proximity sensor or a fingerprint recognition sensor.

公开(公告)号：US11410602B2

公开(公告)日：2022-08-09

申请号：US17092832

申请日：2020-11-09

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Han Bit Kim ,  Yong Su Lee

IPC: G09G3/3233 ,  G09G3/20 ,  G09G3/3275 ,  G09G3/3266

Abstract: A display device includes a driving circuit that drives a pixel, and a display region including the pixel. The pixel includes a light emitting element electrically connected between a first power source and a second power source, a first transistor electrically connected between the first power source and the light emitting element to control a driving current, the first transistor including a first gate electrode electrically connected to a first node, and a second gate electrode electrically connected to a bias control line, and a switching transistor electrically connected between a data line and the first node, the switching transistor including a gate electrode electrically connected to a scan line. The driving circuit varies a control signal provided to the bias control line in a second period based on a first data signal provided to the data line during a first period.

公开(公告)号：US09082795B2

公开(公告)日：2015-07-14

申请号：US14477587

申请日：2014-09-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Doo Hyoung Lee ,  Chan Woo Yang ,  Seung-Ho Jung ,  Doo Na Kim ,  Bo Sung Kim ,  Eun Hye Park ,  June Whan Choi

IPC: H01L29/786 ,  H01L21/336 ,  H01L29/66 ,  H01B1/06 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01B1/06 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属 在半导体层中包含铟（In），锌（Zn）和锡（Sn），摩尔比（R，R⁡[mol⁢％] = [In] [In + Zn + Sn]×100） 对于半导体层中的金属，铟（In）的含量小于约20％，更具体地说，摩尔比（R，R⁡[mol·⁢％] = [In] [In + Zn + Sn]×100 ）的半导体层中的金属的In（In）为约5％至约13％。

公开(公告)号：US12295169B2

公开(公告)日：2025-05-06

申请号：US18607426

申请日：2024-03-16

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Sang Sub Kim ,  Bum Mo Sung

IPC: H10D86/01 ,  G09G3/3233 ,  H10K59/121

Abstract: A display device includes a light emitting element disposed on a substrate, a first transistor which controls a driving current flowing in the light emitting element, a second transistor which supplies a data voltage to a gate electrode of the first transistor, a first-third transistor and a second-third transistor connected in series between the gate and drain electrodes of the first transistor, a first charge injection layer adjacent to a drain electrode of the first-third transistor electrically connected to the gate electrode of the first transistor on a semiconductor region of the first-third transistor, and a second charge injection layer adjacent to a source electrode of the second-third transistor integrally formed with the drain electrode of the first transistor on a semiconductor region of the second-third transistor. A charge injection area of the first charge injection layer is greater than a charge injection area of the second charge injection layer.

公开(公告)号：US12217694B2

公开(公告)日：2025-02-04

申请号：US16849882

申请日：2020-04-15

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Mee Jae Kang ,  Doo Na Kim ,  Yun Jung Oh ,  Yong Su Lee ,  Jae Hwan Chu

IPC: G09G3/3266 ,  G09G3/20 ,  H01L27/12

Abstract: A display device includes: a plurality of pixels connected to gate lines and data lines; a gate driver to supply a gate signal to the gate lines; and a data driver to supply a data signal to the data lines. The gate driver includes: a first transistor including a first active layer at a first layer; and a second transistor including a second active layer at a second layer on the first layer.

公开(公告)号：US11437455B2

公开(公告)日：2022-09-06

申请号：US16856780

申请日：2020-04-23

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Sang Sub Kim ,  Thanh Tien Nguyen ,  Yong Su Lee ,  Jae Hwan Chu

IPC: G09G3/3233 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.

公开(公告)号：US08853687B2

公开(公告)日：2014-10-07

申请号：US13679910

申请日：2012-11-16

Applicant: Samsung Display Co., Ltd.

Inventor： Doo Hyoung Lee ,  Chan Woo Yang ,  Seung-Ho Jung ,  Doo Na Kim ,  Bo Sung Kim ,  Eun Hye Park

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/66 ,  H01B1/06

CPC classification number: H01L29/66969 ,  H01B1/06 ,  H01L21/02565 ,  H01L21/02628 ,  H01L29/7869

Abstract: A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] / 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属 在半导体层中包含铟（In），锌（Zn）和锡（Sn），摩尔比（R，R⁡[mol⁢％] = [In] [In + Zn + Sn]×100） 对于半导体层中的金属，铟（In）的含量小于约20％，更具体地，摩尔比（R，（R，R⁡[mol⁢％] = [In] [In + Zn + Sn 半导体层中的金属的In（In）的比例为约5％〜13％。

公开(公告)号：US12302717B2

公开(公告)日：2025-05-13

申请号：US16857888

申请日：2020-04-24

Applicant: Samsung Display Co., LTD.

Inventor： Keun Woo Kim ,  Sang Sub Kim ,  Hye Na Kwak ,  Doo Na Kim ,  Thanh Tien Nguyen ,  Yong Su Lee ,  Jae Hwan Chu

IPC: H10K59/131 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291

Abstract: A display device includes pixels at least one of which includes a light emitting element connected between a first power source and a second power source, a first transistor connected between the first power source and the light emitting element and controlling a driving current flowing through the light emitting element in response to a voltage of a first node, a switching transistor connected to the first node and including and active layer that includes first and second conductive regions spaced apart from each other, first and second channel regions disposed between the first and second conductive regions, and a common conductive region disposed between the first and second channel regions, and a conductive pattern overlapping the active layer to face the common conductive region.

公开(公告)号：US11615744B2

公开(公告)日：2023-03-28

申请号：US17141808

申请日：2021-01-05

Applicant: Samsung Display Co., Ltd.

Inventor： Keun Woo Kim ,  Tae Wook Kang ,  Doo Na Kim ,  Han Bit Kim ,  Jae Seob Lee ,  Jae Hwan Chu

IPC: G09G3/3233 ,  H01L27/32 ,  H01L29/786

Abstract: Provided is a display device. The display device comprises a substrate, and a plurality of sub-pixels disposed on the substrate and including alight emitting element and a sub-pixel circuit driving the light emitting element. The sub-pixel circuit comprises a driving transistor controlling a driving current flowing through the light emitting element, a first transistor and a second transistor connected in series between a first node, which is a drain electrode of the driving transistor, and a second node, which is a gate electrode of the driving transistor, to receive the same scan signal, and a gate auxiliary electrode disposed on a gate electrode of the first transistor or the second transistor. The gate auxiliary electrode is connected to the gate electrode of the first transistor or the second transistor.

公开(公告)号：US11450722B2

公开(公告)日：2022-09-20

申请号：US16871523

申请日：2020-05-11

Applicant: Samsung Display Co., Ltd.

Inventor： Doo Na Kim ,  Keun Woo Kim ,  Tae Wook Kang ,  Do Kyeong Lee ,  Yong Su Lee ,  Jae Hwan Chu ,  Kwang Hyun Kim ,  Yeoung Keol Woo ,  Yung Bin Chung

IPC: H01L27/14 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: A display device includes: a first semiconductor layer on a first buffer layer, and including a first active layer; a first gate insulating layer on the first semiconductor layer, and covering the first active layer; a first conductive layer on the first gate insulating layer, and including a first gate electrode; a second conductive layer on the first conductive layer, and including a first source/drain electrode; a first interlayer insulating layer on the first conductive layer; a second semiconductor layer on the first interlayer insulating layer, and including a second active layer; a second gate insulating layer on the second semiconductor layer, and covering the second active layer; and a third conductive layer on the second gate insulating layer, and including a second gate electrode and a second source/drain electrode. The first gate insulating layer and the second gate insulating layer include different insulating materials from each other.