公开(公告)号：US12218142B2

公开(公告)日：2025-02-04

申请号：US18508227

申请日：2023-11-13

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ki Hyun Kim ,  Young Gil Park ,  Jin Suk Lee ,  Jai Sun Kyoung ,  Sug Woo Jung

IPC: H01L27/12 ,  H01L21/02 ,  H10K59/121 ,  H10K77/10

Abstract: A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.

公开(公告)号：US12133425B2

公开(公告)日：2024-10-29

申请号：US17398742

申请日：2021-08-10

Applicant: Samsung Display Co., Ltd.

Inventor： Eung Taek Kim ,  Kohei Ebisuno ,  Suk Hoon Ku ,  Jin Suk Lee ,  Jung Mi Choi ,  Young In Hwang ,  Tae Sik Kim ,  Jin Suk Seo ,  Hwang Sup Shin ,  Taek Geun Lee ,  Joo Hyeon Jo ,  Hong Jun Choi ,  Hee Yeon Kim ,  Na Lae Lee

IPC: G09G3/00 ,  H01L29/792 ,  H10K59/123 ,  H10K59/124 ,  H10K59/131 ,  G09G3/3208

CPC classification number: H10K59/124 ,  H01L29/792 ,  H10K59/123 ,  H10K59/131 ,  G09G3/3208

Abstract: A display device is provided. The display device includes a first substrate, a first charge trap layer disposed on the first substrate and including silicon nitride, a semiconductor layer disposed on the first charge trap layer and including a first active layer of a first transistor and a second active layer of a second transistor, and an organic light emitting element electrically connected to the first transistor, wherein a ratio of a content of a Si element to a content of an N element in the first charge trap layer is in a range of 1.6 to 2.5.

公开(公告)号：US11943994B2

公开(公告)日：2024-03-26

申请号：US17404004

申请日：2021-08-17

Applicant: Samsung Display Co., Ltd.

Inventor： Chul Min Bae ,  Eun Jin Kwak ,  Jin Suk Lee ,  Jung Yun Jo ,  Ji Hye Han ,  Young In Hwang

IPC: H10K77/10 ,  C23C14/18 ,  C23C16/34 ,  C23C16/40 ,  C23C28/00 ,  G09G3/3233 ,  H10K50/844 ,  H10K59/12 ,  H10K71/00 ,  H10K71/80

CPC classification number: H10K77/111 ,  C23C14/18 ,  C23C16/345 ,  C23C16/401 ,  C23C28/30 ,  H10K50/844 ,  H10K59/12 ,  H10K71/00 ,  H10K71/80 ,  G09G3/3233 ,  G09G2300/0443 ,  G09G2300/0809 ,  H10K59/1201

Abstract: A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

公开(公告)号：US10199444B2

公开(公告)日：2019-02-05

申请号：US15794060

申请日：2017-10-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ki Hyun Kim ,  Jin Suk Lee ,  Young Gil Park ,  Hyun Sang Seo ,  Na Ri Ahn ,  Sung Chan Jo

IPC: H01L27/32 ,  H01L29/49 ,  H01L51/52 ,  H01L51/50

Abstract: A display device includes a substrate including a display area and a non-display area, a plurality of pixels provided in the display area, lines respectively connected to the plurality of pixels, the lines applying a signal to the plurality of pixels, the lines each including a first metal layer including a first metal and a second metal layer that is provided on the first metal layer and includes a second metal, an insulating layer provided at a least one portion between the substrate and the lines, the insulating layer including an inorganic insulating layer and an organic insulating layer, and a barrier layer provided between the organic insulating layer and the first metal layer, the barrier layer including an oxide of the first metal.

公开(公告)号：US11817458B2

公开(公告)日：2023-11-14

申请号：US16935063

申请日：2020-07-21

Applicant: Samsung Display Co., Ltd.

Inventor： Ki Hyun Kim ,  Young Gil Park ,  Jin Suk Lee ,  Jai Sun Kyoung ,  Sug Woo Jung

IPC: H01L27/12 ,  H10K59/121

CPC classification number: H01L27/1218 ,  H01L27/1225 ,  H01L27/1248

Abstract: A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.

公开(公告)号：US10686024B2

公开(公告)日：2020-06-16

申请号：US16232195

申请日：2018-12-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ki Hyun Kim ,  Jin Suk Lee ,  Young Gil Park ,  Hyun Sang Seo ,  Na Ri Ahn ,  Sung Chan Jo

IPC: H01L27/32 ,  H01L29/49 ,  H01L51/52 ,  H01L51/50 ,  H01L27/12

Abstract: A display device includes a substrate including a display area and a non-display area, a plurality of pixels provided in the display area, lines respectively connected to the plurality of pixels, the lines applying a signal to the plurality of pixels, the lines each including a first metal layer including a first metal and a second metal layer that is provided on the first metal layer and includes a second metal, an insulating layer provided at a least one portion between the substrate and the lines, the insulating layer including an inorganic insulating layer and an organic insulating layer, and a barrier layer provided between the organic insulating layer and the first metal layer, the barrier layer including an oxide of the first metal.

公开(公告)号：US11574592B2

公开(公告)日：2023-02-07

申请号：US17397878

申请日：2021-08-09

Applicant: Samsung Display Co., Ltd.

Inventor： Eung Taek Kim ,  Hee Yeon Kim ,  Hwang Sup Shin ,  Na Lae Lee ,  Jin Suk Lee ,  Taek Geun Lee ,  Joo Hyeon Jo ,  Jung Mi Choi ,  Hong Jun Choi ,  Young In Hwang

IPC: G09G3/3233 ,  H01L27/32 ,  H01L29/786

Abstract: A display device includes a base substrate including a first substrate and a second substrate sequentially laminated, a lower semiconductor layer disposed on at least one of the first substrate and the second substrate, a buffer layer disposed on the base substrate, an active semiconductor layer disposed on the buffer layer and including a first active layer of a first transistor and a second active layer of a second transistor, a first insulating layer disposed on the active semiconductor layer, and a first conductive layer disposed on the first insulating layer and including a first gate electrode of the first transistor and a second gate electrode of the second transistor, wherein the lower semiconductor layer overlaps the first active layer, and does not overlap the second active layer.

公开(公告)号：US09884474B2

公开(公告)日：2018-02-06

申请号：US14566980

申请日：2014-12-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Jin Ok ,  Katsuhiko Tanaka ,  Soo Chan Lee ,  Jae Young Kim ,  Se Mi Lee ,  Jin Suk Lee

IPC: B32B37/10 ,  B32B37/18 ,  B32B38/04 ,  B32B38/10 ,  B29C63/02 ,  H01L51/56 ,  G02F1/13 ,  B29C63/00 ,  B32B38/00 ,  B32B38/18 ,  B32B37/00 ,  H01L51/52

CPC classification number: B32B37/10 ,  B29C63/0073 ,  B32B37/003 ,  B32B37/0046 ,  B32B37/0053 ,  B32B37/18 ,  B32B38/0004 ,  B32B38/1808 ,  B32B38/1841 ,  B32B38/1866 ,  B32B2457/20 ,  G02F1/1303 ,  G02F1/1333 ,  H01L51/524 ,  H01L51/56 ,  Y10T156/108 ,  Y10T156/1348

Abstract: A method of fabricating a curved display device includes placing a cover window having a curved portion and a flat portion on a stage, placing an absorption member, on which a panel member is placed, over the stage, and bonding the panel member onto the flat portion and then the curved portion of the cover window by pressing the panel member against the cover window with a roller, wherein a supporting member is formed at an end of the stage, where the bonding of the panel member and the cover window ends, such that the supporting member supports an end of the panel member until the bonding of the panel member and the cover window is complete.