公开(公告)号：US12045540B2

公开(公告)日：2024-07-23

申请号：US17573829

申请日：2022-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyeok Kim ,  Sangeun Kim ,  Kyoungho Bang ,  Soonho Baek ,  Beakkwon Son ,  Jaemo Yang ,  Gunwoo Lee ,  Dong Yi ,  Gupil Cheong

IPC: G06F3/16 ,  H04R3/00 ,  H04R29/00

CPC classification number: G06F3/165 ,  H04R3/00 ,  H04R29/004

Abstract: An audio device and method are disclosed. The audio device includes a microphone, a communication circuit, and a processor. The processor implements the method, including: establishing a communication link with an electronic device via the communication circuit, transmitting information related to the communication link to an external audio device via the communication circuit, detecting a first level of noise included in a first audio data collected via the at least one microphone, identifying a second level of noise of the external audio device, when the first level of noise satisfies a predesignated first condition, and controlling the external audio device to transmit second audio data collected by the external audio device to the electronic device, when the second level of noise of the external audio device meets a predesignated second condition different from the predesignated first condition.

公开(公告)号：US11640922B2

公开(公告)日：2023-05-02

申请号：US17578785

申请日：2022-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Miso Shin ,  Chungki Min ,  Gihwan Kim ,  Sanghyeok Kim ,  Hyo-Jung Kim ,  Geunwon Lim

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/3105 ,  H01L27/11573 ,  H01L21/324 ,  H01L27/11582 ,  H01L21/311

Abstract: A device including a gap-fill layer may include an upper layer that on a lower layer that defines a trench that extends from a top surface of the upper layer and towards the lower layer, and the gap filling layer may be a multi-layered structure filling the trench. The gap-filling layer may include a first dielectric layer that fills a first portion of the trench and has a top surface proximate to the top surface of the upper layer, a second dielectric layer that fills a second portion of the trench and has a top surface proximate to the top surface of the upper layer and more recessed toward the lower layer than the top surface of the first dielectric layer, and a third dielectric layer that fills a remaining portion of the trench and covers the top surface of the second dielectric layer.

公开(公告)号：US12082279B2

公开(公告)日：2024-09-03

申请号：US17568062

申请日：2022-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beakkwon Son ,  Sangeun Kim ,  Sanghyeok Kim ,  Hangil Moon ,  Kyoungho Bang ,  Soonho Baek ,  Jaemo Yang ,  Gunwoo Lee ,  Byoungchul Lee

IPC: H04W76/15 ,  H04B17/336 ,  H04W76/19 ,  H04W76/34

CPC classification number: H04W76/15 ,  H04B17/336 ,  H04W76/19 ,  H04W76/34

Abstract: Certain embodiments of the disclosure include a first electronic device, comprising at least one microphone, a communication circuit, and at least one processor, wherein the at least one processor is configured to: establish a first communication connection with an external electronic device using the communication circuit, transmit through the first communication connection, to the external electronic device, using the communication circuit, information for a first voice signal obtained using the at least one microphone, receive second noise information for a second voice signal from the second electronic device, by the communication circuit, wherein the second voice signal corresponding to the first voice signal was obtained by a second electronic device while the information for the first voice signal was transmitted to the external electronic device, and transmit, based on first noise information for the first voice signal and the received second noise information satisfy a specified condition, first control information for allowing the second electronic device to establish a second communication connection with the external electronic device, using the communication circuit.

公开(公告)号：US20240298787A1

公开(公告)日：2024-09-12

申请号：US18236691

申请日：2023-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyeok Kim ,  Jeongmin Na

IPC: A46B9/02 ,  B08B1/00 ,  B08B1/04

CPC classification number: A46B9/026 ,  B08B1/12 ,  B08B1/32 ,  A46B2200/3073

Abstract: A wafer cleaning brush includes a rotatable core, a brush body surrounding an outer circumferential surface of the core, and a plurality of protrusions disposed on a brush body surface, where a pitch of the plurality of protrusions in a length direction of the brush body may be in a range of 11 mm to 15 mm, and where, for each of the plurality of protrusions, a value obtained by dividing a long side of the brush body in the length direction by the pitch is below 0.55.

公开(公告)号：US11257708B2

公开(公告)日：2022-02-22

申请号：US16377516

申请日：2019-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Miso Shin ,  Chungki Min ,  Gihwan Kim ,  Sanghyeok Kim ,  Hyo-Jung Kim ,  Geunwon Lim

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/3105 ,  H01L27/11573 ,  H01L21/324 ,  H01L27/11582 ,  H01L21/311

Abstract: A device including a gap-fill layer may include an upper layer that on a lower layer that defines a trench that extends from a top surface of the upper layer and towards the lower layer, and the gap filling layer may be a multi-layered structure filling the trench. The gap-filling layer may include a first dielectric layer that fills a first portion of the trench and has a top surface proximate to the top surface of the upper layer, a second dielectric layer that fills a second portion of the trench and has a top surface proximate to the top surface of the upper layer and more recessed toward the lower layer than the top surface of the first dielectric layer, and a third dielectric layer that fills a remaining portion of the trench and covers the top surface of the second dielectric layer.