公开(公告)号：US20240137325A1

公开(公告)日：2024-04-25

申请号：US18467132

申请日：2023-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhyoung KIM ,  Wonbo Lee ,  Sungin Kim ,  Taewan Kim ,  Hongshik Kim ,  Jaewon Jang

IPC: H04L47/283 ,  H04L61/5007

CPC classification number: H04L47/283 ,  H04L61/5007 ,  H04L2101/604

Abstract: Various embodiments of the disclosure relate to a device and a method for modifying a UPF in an electronic device. The electronic device may include: a communication circuit and a processor. The processor may be configured to: perform data communication through a PDU session and IP address 1, identify IP address 2 of the PDU session related to modification of the UPF, identify an RTT in which the IP address 1 is used and an RTT in which the IP address 2 is used, in a state in which the IP address 1 and the IP address 2 of the PDU session are allocated, modify the data path to IP address 2, based on a result of comparing the RTT in which IP address 1 is used and the RTT in which IP address 2 is used, prior to expiration of a valid lifetime of IP address 1, and release the IP address 1 based on modification of the data path to the IP address 2.

公开(公告)号：US20230343800A1

公开(公告)日：2023-10-26

申请号：US18093609

申请日：2023-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoungeun CHANG ,  Sungin Kim ,  Seonghoon Ko ,  Donghyun Kim ,  Wook Lee

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14643 ,  H01L27/1463 ,  H01L27/14689

Abstract: An image sensor includes a substrate having a pixel region in which an active region having a locally asymmetric fin region limited by a locally cutout space is defined and a transistor provided in the pixel region. The transistor includes a horizontal gate portion provided on the active region and a vertical gate portion filling the locally cutout space and facing one of fin sidewalls of the locally asymmetric fin region. Distances of the source region and drain region formed in the active region from the locally asymmetric fin region are different from each other. An electronic system includes at least one camera module including an image sensor and a processor configured to process image data provided from the at least one camera module.

公开(公告)号：US20240243151A1

公开(公告)日：2024-07-18

申请号：US18410884

申请日：2024-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghye Kim ,  Gilwoo Kong ,  Donghyun Kim ,  Sungin Kim

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14614 ,  H04N25/77

Abstract: An image sensor includes a substrate and first and second shared pixels, which extend adjacent to each other in a first direction across the substrate. Each of the shared pixels includes: a plurality of floating diffusion regions at spaced apart locations within the substrate, and a plurality of spaced-apart source follower gates electrically connected to the plurality of floating diffusion regions. A deep trench isolation structure is provided, which extends within the substrate and at least partially partitions the first and second shared pixels from each other. A contact barrier structure is provided, which extends on the substrate, vertically overlaps the deep trench isolation structure, at least partially partitions the first and second shared pixels from each other, and is arranged with a long axis in a second direction orthogonal to the first direction and between the source follower gate of the first shared pixel and the source follower gate of the second shared pixel.

公开(公告)号：US11948964B2

公开(公告)日：2024-04-02

申请号：US16904708

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook Lim ,  Sungin Kim ,  Changhwa Kim ,  Yeoseon Choi

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/1463

Abstract: An image sensor is disclosed. The image sensor includes a semiconductor substrate, a plurality of pillars protruding from the semiconductor substrate, and spaced from each other, a spacer layer on the semiconductor substrate and a sidewall of each of the plurality of pillars, a plurality of gate structures on the spacer layer, and a plurality of unit pixels arranged in a matrix form. The first unit pixel includes a first photodiode (PD) formed in the semiconductor substrate, a first pillar, a second pillar and a third pillar of the plurality of pillars, and a first gate structure and a second gate structure of the plurality of gate structures. Each of the first pillar and the second pillar includes a first channel region and a first drain region on the first channel region. The third pillar is not surround by any gate structure of the plurality of gate structures.

公开(公告)号：US12170298B2

公开(公告)日：2024-12-17

申请号：US17562125

申请日：2021-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jameyung Kim ,  Sungin Kim ,  Dongmo Im

IPC: H01L27/14 ,  H01L27/146

Abstract: An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.

公开(公告)号：US20240355841A1

公开(公告)日：2024-10-24

申请号：US18761524

申请日：2024-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungeun Chang ,  Sungin Kim ,  Jameyung Kim ,  Incheol Cho

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643

Abstract: Provided are an image sensor and an electronic system including the same. An image sensor includes a substrate having a pixel region in which an active region is defined, a gate electrode on the active region, and a source region and a drain region formed in the active region on both sides of the gate electrode, wherein the active region includes an edge portion extending along an outline of a top surface thereof, the edge portion including a local round edge portion having a first radius of curvature that is greater than a second radius of curvature of other portions of the edge portion, and a distance from the local round edge portion to the drain region is less than a distance from the local round edge portion to the source region, wherein the gate electrode includes a round inner corner portion facing the local round edge portion.

公开(公告)号：US11871265B2

公开(公告)日：2024-01-09

申请号：US16963126

申请日：2019-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Madhan Raj Kanagarathinam ,  Sukhdeep Singh ,  Irlanki Sandeep ,  Ankur Chauhan ,  Avinash Bhat ,  Hongshik Kim ,  Sungin Kim

IPC: H04W28/02 ,  H04L47/193 ,  H04L47/27

CPC classification number: H04W28/0289 ,  H04L47/193 ,  H04L47/27

Abstract: Accordingly the embodiments herein provide a method for dynamically controlling a TCP congestion window. The method includes estimating, by an electronic device 100, a real time available bandwidth for an available network. Further, the method includes deriving, by the electronic device 100, a dynamic congestion window control factor from the estimated real time available bandwidth. Further, the method includes modifying, by the electronic device 100, the congestion window based on the derived dynamic congestion window control factor. In an embodiment, the congestion window is modified by passing the real time available bandwidth information from a lower layer of a modem to a higher layer of a TCP Stack and adjusting the congestion window.

公开(公告)号：US12074787B2

公开(公告)日：2024-08-27

申请号：US17981941

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon Jang ,  Sungin Kim ,  Hongshik Kim ,  Ansik Shin ,  Yujin Jeong ,  Taewan Kim

IPC: H04L45/302 ,  H04L67/141

CPC classification number: H04L45/306 ,  H04L67/141

Abstract: According to various embodiments, an electronic device includes at least one processor. The at least one processor may be configured to: confirm a data session establishment request from a first application executed by the at least one processor; confirm at least one first descriptor corresponding to the first application for path selection; confirm a first network interface corresponding to the at least one first confirmed descriptor based on the at least one first confirmed descriptor; establish a first data session corresponding to the at least one first confirmed descriptor; and transmit and/or receive data related to the first application through the first network interface using the first data session.

公开(公告)号：US11743342B2

公开(公告)日：2023-08-29

申请号：US17568384

申请日：2022-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonbo Lee ,  Sungin Kim ,  Youngwook Kim ,  Jinhyoung Kim ,  Taewan Kim ,  Hongshik Kim ,  Ansik Shin ,  Sangcheol Lee

IPC: H04L67/141 ,  H04L67/1021 ,  H04L69/322

CPC classification number: H04L67/141 ,  H04L67/1021 ,  H04L69/322

Abstract: An electronic device and an operation method of an electronic device are provided. The electronic device includes a memory storing an application, an edge enabler client (EEC), and/or a user equipment (UE) route selection policy (URSP) rule used for producing a session used by the electronic device, a communication circuit used for a communication connection between the electronic device and at least one of a first server, a plurality of second servers, or a third server disposed outside the electronic device, via a base station, and a processor, the application being configured to perform, in the electronic device, one or more services corresponding to an application executable in the third server, and the processor is configured to identify identification information of the EEC and identification information of an EEC included in the URSP rule, in response to activation of the EEC, to set a first packet data unit (PDU) session.

公开(公告)号：US20220392930A1

公开(公告)日：2022-12-08

申请号：US17671651

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoungeun Chang ,  Hyunchul Kim ,  Jinyoung Kim ,  Donghyun Kim ,  Sungin Kim

IPC: H01L27/146

Abstract: An image sensor includes: a substrate having a first surface on which light is incident and a second surface opposite to the first surface; a pixel isolation structure enclosing a pixel region in the substrate; a photoelectric conversion region in the pixel region; and a device isolation layer defining a pattern in the pixel region, wherein the device isolation layer includes a first portion contacting the pixel isolation structure and a second portion spaced apart from the pixel isolation structure, the device isolation layer extends from a second surface of the substrate into the substrate, and a length of the second portion of the device isolation layer in a vertical direction perpendicular to the first surface of the substrate is less than a length of the first portion of the device isolation layer in the vertical direction.