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1.发明授权公开(公告)号：US09727276B2
公开(公告)日：2017-08-08
申请号：US14977143
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G11C16/04 , G06F3/06 , G11C16/28 , G11C16/32 , G06F11/07 , G11C16/34 , G11C11/56 , G11C16/12 , G11C29/02 , G06F11/00 , G11C29/56 , G11C29/52
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
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公开(公告)号：US20160180952A1
公开(公告)日：2016-06-23
申请号：US14977174
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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3.发明申请MEASURING MEMORY WEAR AND DATA RETENTION INDIVIDUALLY BASED ON CELL VOLTAGE DISTRIBUTIONS 有权基于单元电压分布测量记忆磨损和数据保持公开(公告)号：US20160180951A1
公开(公告)日：2016-06-23
申请号：US14977143
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G11C16/34
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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公开(公告)号：US20160179608A1
公开(公告)日：2016-06-23
申请号：US14977187
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G06F11/07
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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5.发明授权Method and system for adjusting block erase or program parameters based on a predicted erase life 有权基于预测的擦除寿命来调整块擦除或程序参数的方法和系统公开(公告)号：US09329797B2
公开(公告)日：2016-05-03
申请号：US14144202
申请日：2013-12-30
Applicant: SanDisk Technologies Inc.
Inventor： Neil Richard Darragh , Eran Erez , Sergey Anatolievich Gorobets
CPC classification number: G06F3/0653 , G06F3/0616 , G06F3/0679 , G06F2212/7211 , G11C16/16 , G11C16/3495
Abstract: A method and system are disclosed for improved block erase cycle life prediction and block management in a non-volatile memory. The method includes the storage device tracking information relating to a first erase cycle count at which the block erase time exceeded a predetermined threshold relative to a first erase cycle at which this occurred in other blocks. Blocks having a later relative erase cycle at which the erase time threshold is exceeded are assumed to have a greater erase cycle life than those that need to exceed the erase time threshold at an earlier erase cycle. This information is used to adjust wear leveling in the form of free block selection, garbage collection block selection and other block management processes. Alternatively or in combination, the predicted erase cycle life information is used to adjust program and/or erase parameters such as erase voltage and time.
Abstract translation: 公开了用于在非易失性存储器中改进块擦除周期寿命预测和块管理的方法和系统。 该方法包括与第一擦除周期计数有关的存储装置跟踪信息，在该第一擦除周期计数，块擦除时间超过预定阈值，相对于其它块中发生的第一擦除周期。 具有擦除时间阈值超过的较后相对擦除周期的块假设具有比在较早擦除周期期间需要超过擦除时间阈值的擦除周期寿命更长的擦除周期寿命。 该信息用于以自由块选择，垃圾收集块选择和其他块管理过程的形式来调整磨损均衡。 或者或组合地，预测的擦除周期寿命信息用于调整诸如擦除电压和时间的程序和/或擦除参数。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20150186055A1
公开(公告)日：2015-07-02
申请号：US14144195
申请日：2013-12-30
Applicant: SanDisk Technologies Inc.
Inventor： Neil Richard Darragh
CPC classification number: G06F3/0616 , G06F3/0653 , G06F3/0679 , G06F12/0246 , G06F2212/7211 , G11C16/16 , G11C16/3445 , G11C16/349 , G11C29/028 , G11C29/50004 , G11C2029/0409
Abstract: A method and system are disclosed for improved block erase cycle life prediction and block management in a non-volatile memory. The method includes the storage device tracking information relating to a first erase cycle count at which the block erase time exceeded a predetermined threshold relative to a first erase cycle at which this occurred in other blocks. Blocks having a later relative erase cycle at which the erase time threshold is exceeded are assumed to have a greater erase cycle life than those that need to exceed the erase time threshold at an earlier erase cycle. This information is used to adjust wear leveling in the form of free block selection, garbage collection block selection and other block management processes. Alternatively or in combination, the predicted erase cycle life information is used to adjust program and/or erase parameters such as erase voltage and time.
Abstract translation: 公开了用于在非易失性存储器中改进块擦除周期寿命预测和块管理的方法和系统。 该方法包括与第一擦除周期计数有关的存储装置跟踪信息，在该第一擦除周期计数，块擦除时间超过预定阈值，相对于其它块中发生的第一擦除周期。 具有擦除时间阈值超过的较后相对擦除周期的块假设具有比在较早擦除周期期间需要超过擦除时间阈值的擦除周期寿命更长的擦除周期寿命。 该信息用于以自由块选择，垃圾收集块选择和其他块管理过程的形式来调整磨损均衡。 或者或组合地，预测的擦除周期寿命信息用于调整诸如擦除电压和时间的程序和/或擦除参数。
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公开(公告)号：US10430112B2
公开(公告)日：2019-10-01
申请号：US14977155
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G11C16/06 , G06F3/06 , G11C16/28 , G11C16/32 , G06F11/07 , G11C16/34 , G11C29/52 , G11C11/56 , G11C16/12 , G11C29/02 , G06F11/00 , G11C29/50 , G11C29/00 , G11C29/56 , G11C16/04
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
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8.发明授权公开(公告)号：US09423970B2
公开(公告)日：2016-08-23
申请号：US14144195
申请日：2013-12-30
Applicant: SanDisk Technologies Inc.
Inventor： Neil Richard Darragh
CPC classification number: G06F3/0616 , G06F3/0653 , G06F3/0679 , G06F12/0246 , G06F2212/7211 , G11C16/16 , G11C16/3445 , G11C16/349 , G11C29/028 , G11C29/50004 , G11C2029/0409
Abstract: A method and system are disclosed for improved block erase cycle life prediction and block management in a non-volatile memory. The method includes the storage device tracking information relating to a first erase cycle count at which the block erase time exceeded a predetermined threshold relative to a first erase cycle at which this occurred in other blocks. Blocks having a later relative erase cycle at which the erase time threshold is exceeded are assumed to have a greater erase cycle life than those that need to exceed the erase time threshold at an earlier erase cycle. This information is used to adjust wear leveling in the form of free block selection, garbage collection block selection and other block management processes. Alternatively or in combination, the predicted erase cycle life information is used to adjust program and/or erase parameters such as erase voltage and time.
Abstract translation: 公开了用于在非易失性存储器中改进块擦除周期寿命预测和块管理的方法和系统。 该方法包括与第一擦除周期计数有关的存储装置跟踪信息，在该第一擦除周期计数，块擦除时间超过预定阈值，相对于其它块中发生的第一擦除周期。 具有擦除时间阈值超过的较后相对擦除周期的块假设具有比在较早擦除周期期间需要超过擦除时间阈值的擦除周期寿命更长的擦除周期寿命。 该信息用于以自由块选择，垃圾收集块选择和其他块管理过程的形式来调整磨损均衡。 或者或组合地，预测的擦除周期寿命信息用于调整诸如擦除电压和时间的程序和/或擦除参数。
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公开(公告)号：US20160179597A1
公开(公告)日：2016-06-23
申请号：US14977144
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
CPC classification number: G06F3/0653 , G06F3/0625 , G06F3/0634 , G06F11/008 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/0793 , G11C11/5628 , G11C16/0483 , G11C16/12 , G11C16/28 , G11C16/32 , G11C16/3418 , G11C16/3422 , G11C16/349 , G11C16/3495 , G11C29/028 , G11C29/50004 , G11C29/52 , G11C29/56008 , G11C29/70 , G11C2029/5004
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
Abstract translation: 存储器系统或闪存卡可以包括用于存储器单元测量和分析的机制，其独立地测量/预测存储器磨损/耐久性，数据保持（DR），读取干扰和/或剩余余量。 可以通过分析单元的各个电压电平的状态分布来独立地量化这些效应。 特别地，可以分析存储器单元的单元电压分布的直方图以识别特定效果的签名（例如，磨损，DR，读取干扰，余量等）。 这些测量可用于块循环，数据丢失预测或对存储器参数的调整。 在适当的时间基于测量的优先行动可能会导致改进的内存管理和数据管理。 该动作可以包括计算存储在存储器中的数据的剩余使用寿命，循环块，预测数据丢失，权衡或动态调整存储器参数。
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公开(公告)号：US10223029B2
公开(公告)日：2019-03-05
申请号：US14977222
申请日：2015-12-21
Applicant: SanDisk Technologies Inc.
IPC: G06F3/06 , G11C16/28 , G11C16/32 , G06F11/07 , G11C16/34 , G11C29/52 , G11C11/56 , G11C16/12 , G11C29/02 , G06F11/00 , G11C29/50 , G11C29/00 , G11C29/56 , G11C16/04
Abstract: A memory system or flash card may include a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects may be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements may be used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements may lead to improved memory management and data management. That action may include calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
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