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公开(公告)号：US20150167155A1
公开(公告)日：2015-06-18
申请号：US14635847
申请日：2015-03-02
Applicant: Seagate Technology LLC
Inventor： Michael Feldbaum , Koichi Wago , David Kuo
CPC classification number: C23C14/48 , C23C14/0605 , C23C14/08 , G11B5/84 , G11B5/8408 , G11B5/855 , Y10T428/24612
Abstract: Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer.
Abstract translation: 本文提供了一种方法，包括在图案化的抗蚀剂上共形沉积第一层; 在第一层上沉积第二较厚的层; 蚀刻第二层以暴露第一层; 以及通过根据图案化的抗蚀剂的离子注入构图磁性层以形成图案化磁体层。
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公开(公告)号：US09626996B2
公开(公告)日：2017-04-18
申请号：US14588865
申请日：2015-01-02
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Zhaoning Yu , Kim Yang Lee , Michael Feldbaum , Yautzong Hsu , Wei Hu , Shuaigang Xiao , Henry Yang , HongYing Wang , Rene Johannes Marinus van de Veerdonk , David Kuo
IPC: G03F7/004 , G11B5/855 , H01L21/3065 , G03F7/40 , H01L21/027 , G03F7/20 , H01L21/02 , B82Y10/00 , B82Y40/00 , G03F7/00 , B81C1/00 , B32B27/36 , B32B27/28 , B32B27/30 , B32B3/30 , G03F7/16 , B05D1/00 , C23F4/00
CPC classification number: G11B5/855 , B05D1/005 , B32B3/30 , B32B27/283 , B32B27/302 , B32B27/308 , B32B27/36 , B32B2457/14 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C23F4/00 , G03F7/0002 , G03F7/0035 , G03F7/165 , G03F7/2022 , G03F7/203 , G03F7/2059 , G03F7/40 , H01L21/02112 , H01L21/0274 , H01L21/3065 , Y10T428/24612
Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.
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公开(公告)号：US09181618B2
公开(公告)日：2015-11-10
申请号：US14635847
申请日：2015-03-02
Applicant: Seagate Technology LLC
Inventor： Michael Feldbaum , Koichi Wago , David Kuo
CPC classification number: C23C14/48 , C23C14/0605 , C23C14/08 , G11B5/84 , G11B5/8408 , G11B5/855 , Y10T428/24612
Abstract: Provided herein is a method including conformally depositing a first layer over a patterned resist; depositing a second, thicker layer over the first layer; etching the second layer to expose the first layer; and patterning a magnetic layer by ion implantation in accordance with the patterned resist to form a patterned magnet layer.
Abstract translation: 本文提供了一种方法，包括在图案化的抗蚀剂上共形沉积第一层; 在第一层上沉积第二较厚的层; 蚀刻第二层以暴露第一层; 以及通过根据图案化的抗蚀剂的离子注入构图磁性层以形成图案化磁体层。
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4.发明申请BLOCK COPOLYMER SELF-ASSEMBLY FOR PATTERN DENSITY MULTIPLICATION AND RECTIFICATION 有权嵌段共聚物自组装图形密度多重和修复公开(公告)号：US20150118625A1
公开(公告)日：2015-04-30
申请号：US14588865
申请日：2015-01-02
Applicant: Seagate Technology LLC
Inventor： XiaoMin Yang , Zhaoning Yu , Kim Yang Lee , Michael Feldbaum , Yautzong Hsu , Wei Hu , Shuaigang Xiao , Henry Yang , HongYing Wang , Rene Johannes Marinus van de Veerdonk , David Kuo
CPC classification number: G11B5/855 , B05D1/005 , B32B3/30 , B32B27/283 , B32B27/302 , B32B27/308 , B32B27/36 , B32B2457/14 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , C23F4/00 , G03F7/0002 , G03F7/0035 , G03F7/165 , G03F7/2022 , G03F7/203 , G03F7/2059 , G03F7/40 , H01L21/02112 , H01L21/0274 , H01L21/3065 , Y10T428/24612
Abstract: Provided herein is a method, including a) transferring an initial pattern of an initial template to a substrate; b) performing block copolymer self-assembly over the substrate with a density multiplication factor k; c) creating a subsequent pattern in a subsequent template with the density multiplication factor k; and d) repeating steps a)-c) with the subsequent template as the initial template until a design specification for the subsequent pattern with respect to pattern density and pattern resolution is met.
Abstract translation: 本文提供了一种方法，包括：a）将初始模板的初始图案转移到衬底; b）以密度倍增因子k在衬底上进行嵌段共聚物自组装; c）使用密度倍增因子k在后续模板中创建后续模式; 和d）重复步骤a）-c），随后的模板作为初始模板，直到满足关于模式密度和模式分辨率的后续模式的设计规范。
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