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    PRESSURE SENSOR HAVING CAP-DEFINED MEMBRANE
    1.
    发明申请
    PRESSURE SENSOR HAVING CAP-DEFINED MEMBRANE 审中-公开
    带有定义膜的压力传感器

    公开(公告)号：US20160178467A1

    公开(公告)日：2016-06-23

    申请号：US15040899

    申请日：2016-02-10

    Applicant: Silicon Microstructures, Inc.

    Inventor： Steve Terry ,  Fernando Alfaro ,  Marc Konradt

    IPC: G01L9/00 ,  B81B7/00

    CPC classification number: G01L9/0048 ,  B81B7/0016 ,  B81B7/0029 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L9/0042 ,  G01L9/0047 ,  G01L9/0051 ,  G01L9/0055 ,  G01L19/0092

    Abstract: Structures and methods of protecting membranes on pressure sensors. One example may provide a pressure sensor having a backside cavity defining a frame and under a membrane formed in a device layer. The sensor may further include a cap joined to the device layer by a bonding layer. A recess for a reference cavity may be formed in one or more of the cap, bonding layer, and membrane or other device layer portion. The recess may have a width that is narrower than a width of the backside cavity in at least one direction. A eutectically bondable metal stack may be provided on a bottom side of the sensor. Conductive traces in the sensor may be formed by implanting and annealing ions. An implanted field shield may be formed to protect the conductive traces that form sense elements. Damage prevention circuitry and a temperature sensing diode may also be provided.

    Abstract translation: 在压力传感器上保护膜的结构和方法。 一个示例可以提供一种压力传感器，该压力传感器具有限定框架的背侧空腔以及在器件层中形成的膜下方。 传感器还可以包括通过粘合层连接到器件层的盖。 用于参考空腔的凹槽可以形成在帽，粘合层，膜或其它器件层部分中的一个或多个中。 所述凹部的宽度可以在至少一个方向上比所述背侧腔的宽度窄。 可以在传感器的底侧设置可共熔的金属叠层。 传感器中的导电迹线可以通过植入和退火离子形成。 可以形成植入场屏蔽以保护形成感测元件的导电迹线。 还可以提供防损伤电路和温度感测二极管。

    LOW-PRESSURE SENSOR WITH STIFFENING RIBS
    3.
    发明申请
    LOW-PRESSURE SENSOR WITH STIFFENING RIBS 有权

    公开(公告)号：US20210199527A1

    公开(公告)日：2021-07-01

    申请号：US16729442

    申请日：2019-12-29

    Applicant: Silicon Microstructures, Inc.

    Inventor： Fernando Alfaro

    IPC: G01L9/00

    Abstract: Semiconductor MEMS pressure sensors that can produce a linear and large output signal when subject to a small pressure, without an increase to the front to back span error. One example can experience large deflections without causing catastrophic damage to the membrane. The pressure sensor can include a silicon layer having opposing surfaces, an etched pattern in of the surfaces of the silicon layer, and an etched cavity on the opposite surface of the silicon layer to form a membrane. The etched patterned can include a series of concentric stiffening ribs, an inverted boss, large depression areas next to the membrane edge and/or the boss, and piezoresistive strain concentrators. The ribs and depressions can be formed onto the silicon membrane by anisotropic or isotropic etch techniques. Piezoresistive devices can be diffused into the membrane in the regions near the strain concentrators to form a Wheatstone bridge or other measurement structure.

    Low-pressure sensor with stiffening ribs
    6.
    发明授权
    Low-pressure sensor with stiffening ribs 有权

    公开(公告)号：US11473991B2

    公开(公告)日：2022-10-18

    申请号：US16729442

    申请日：2019-12-29

    Applicant: Silicon Microstructures, Inc.

    Inventor： Fernando Alfaro

    IPC: G01L9/00

    Abstract: Semiconductor MEMS pressure sensors that can produce a linear and large output signal when subject to a small pressure, without an increase to the front to back span error. One example can experience large deflections without causing catastrophic damage to the membrane. The pressure sensor can include a silicon layer having opposing surfaces, an etched pattern in of the surfaces of the silicon layer, and an etched cavity on the opposite surface of the silicon layer to form a membrane. The etched patterned can include a series of concentric stiffening ribs, an inverted boss, large depression areas next to the membrane edge and/or the boss, and piezoresistive strain concentrators. The ribs and depressions can be formed onto the silicon membrane by anisotropic or isotropic etch techniques. Piezoresistive devices can be diffused into the membrane in the regions near the strain concentrators to form a Wheatstone bridge or other measurement structure.

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