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    SILICON PLATE IN PLASTIC PACKAGE
    4.
    发明申请
    SILICON PLATE IN PLASTIC PACKAGE 审中-公开
    塑料包装中的硅胶板

    公开(公告)号：US20140260650A1

    公开(公告)日：2014-09-18

    申请号：US14022233

    申请日：2013-09-10

    Applicant: Silicon Microstructures, Inc.

    Inventor： Holger Doering ,  Richard J. August ,  Severino Legaspi

    IPC: G01L19/14

    CPC classification number: G01L19/147 ,  G01L19/145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: Circuits, methods, and apparatus that provide pressure sensor devices where pressure sensors may be reliably attached to surfaces in device packages, and where the coefficients of expansion of the pressure sensor and the surface are at least approximately equal. Examples may provide pressure sensor devices where pressure sensors may be reliably attached to surfaces in device packages by providing interposers formed to prevent adhesives used to attach the pressure sensors to surfaces from blocking or encroaching into pressure sensor openings or cavities. These same features may be used to accurately locate a pressure sensor relative to the interposer. Embodiments of the present invention may provide pressure sensor devices where the coefficients of expansion of the pressure sensor and the surface are at least approximately equal by proving interposers that are formed of the same or similar material as the pressure sensors, such as silicon.

    Abstract translation: 提供压力传感器装置的电路，方法和装置，其中压力传感器可以可靠地附接到装置封装中的表面，并且其中压力传感器和表面的膨胀系数至少近似相等。 示例可以提供压力传感器装置，其中压力传感器可以通过提供形成为防止用于将压力传感器附接到表面的粘合剂阻挡或侵入压力传感器开口或空腔中的粘合剂而可靠地附接到装置包装中的表面。 可以使用这些相同的特征来相对于插入件精确地定位压力传感器。 本发明的实施例可以提供压力传感器装置，其中压力传感器和表面的膨胀系数至少近似相等，通过证明由与诸如硅的压力传感器相同或相似的材料形成的插入件。

    VERTICAL MEMBRANES FOR PRESSURE SENSING APPLICATIONS
    7.
    发明申请
    VERTICAL MEMBRANES FOR PRESSURE SENSING APPLICATIONS 有权
    压力传感应用的垂直膜

    公开(公告)号：US20150316436A1

    公开(公告)日：2015-11-05

    申请号：US14269052

    申请日：2014-05-02

    Applicant: Silicon Microstructures, Inc.

    Inventor： Holger Doering

    IPC: G01L9/00

    CPC classification number: G01L9/0047 ,  G01L9/0051 ,  G01L19/0618

    Abstract: Pressure sensors having vertical diaphragms or membranes. A vertical diaphragm may be located in a first silicon wafer between a first and second cavity, where the first and second cavities are covered by a second silicon wafer. One or more active or passive devices or components may be located on a top of the vertical diaphragm.

    Abstract translation: 压力传感器具有垂直隔膜或隔膜。 垂直隔膜可以位于第一和第二空腔之间的第一硅晶片中，其中第一和第二空腔被第二硅晶片覆盖。 一个或多个有源或无源器件或部件可以位于垂直隔膜的顶部上。

    AREA-EFFICIENT PRESSURE SENSING DEVICE
    8.
    发明申请
    AREA-EFFICIENT PRESSURE SENSING DEVICE 审中-公开
    区域高压传感装置

    公开(公告)号：US20150143926A1

    公开(公告)日：2015-05-28

    申请号：US14088397

    申请日：2013-11-23

    Applicant: Silicon Microstructures, Inc.

    Inventor： Holger Doering

    IPC: G01L1/22 ,  H01L21/52 ,  G01L1/04

    CPC classification number: H01L21/52 ,  G01L9/0054 ,  G01L19/146 ,  H01L2224/48091 ,  H01L2924/10158 ,  H01L2924/00014

    Abstract: Circuits, methods, and apparatus that provide pressure sensing devices having a pressure sensor including a diaphragm supported by a frame. The pressure sensor may be mounted on an application-specific integrated circuit. A passage may extend through the application-specific integrated circuit from its underside to its topside where it may terminate in a cavity formed under the diaphragm. Circuit components may be formed in the second wafer portion and located in areas that are not under the first wafer portion. Circuit components may be formed in the second wafer in areas under the first wafer portion, such as under the frame or under the diaphragm. Circuit components may be formed in the second wafer such that they are partially under the first wafer portion, or partially under the frame or partially under the diaphragm.

    Abstract translation: 提供压力传感装置的电路，方法和装置，其具有包括由框架支撑的隔膜的压力传感器。 压力传感器可以安装在专用集成电路上。 通道可以从专用集成电路的下侧延伸到其顶侧，其可以终止在形成在隔膜下方的空腔中。 电路部件可以形成在第二晶片部分中并且位于不在第一晶片部分下方的区域中。 电路部件可以在第一晶片部分下方的区域中形成在第二晶片中，例如在框架下或隔膜下方。 电路组件可以形成在第二晶片中，使得它们部分地位于第一晶片部分下方，或部分地位于框架下方或部分地位于隔膜下方。

    PRESSURE SENSOR CAP HAVING FLOW PATH WITH DIMENSION VARIATION
    9.
    发明申请
    PRESSURE SENSOR CAP HAVING FLOW PATH WITH DIMENSION VARIATION 审中-公开

    公开(公告)号：US20190078914A1

    公开(公告)日：2019-03-14

    申请号：US16129355

    申请日：2018-09-12

    Applicant: Silicon Microstructures, Inc.

    Inventor： Holger Doering ,  Omar Abed

    IPC: G01F1/40 ,  G01F1/36 ,  G01L1/10

    Abstract: Pressure sensors that may be used in flowrate monitoring or measuring systems, where the pressure sensors may enable simple, low-cost designs that are readily implemented. One example may provide a pressure sensor having a built-in flow path with a dimensional variation. Pressures of a fluid on each side of the dimensional variation may be compared to each other. The measured differential pressure may then be converted to a flowrate through the flow path.

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