公开(公告)号：US12014063B2

公开(公告)日：2024-06-18

申请号：US18098129

申请日：2023-01-18

Applicant: Silicon Motion, Inc.

Inventor： Ching-Hui Lin

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0605 ,  G06F3/0652 ,  G06F3/0659 ,  G06F3/0679

Abstract: The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, and the control method includes the steps of: receiving a settling command from a host device to configure a portion space of the flash memory module as a zoned namespace; receiving a write command from the host device to write data corresponding a first zone into a plurality of blocks of the flash memory module, wherein an access mode chose by the flash memory controller is determined based on a size of each zone and a size of each block.

公开(公告)号：US20210271402A1

公开(公告)日：2021-09-02

申请号：US17324121

申请日：2021-05-19

Applicant: Silicon Motion, Inc.

Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

IPC: G06F3/06 ,  G06F12/02 ,  G11C11/56

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

公开(公告)号：US10824354B2

公开(公告)日：2020-11-03

申请号：US16686200

申请日：2019-11-17

Applicant: Silicon Motion, Inc.

Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

IPC: G11C11/34 ,  G11C16/04 ,  G06F3/06 ,  G06F12/02 ,  G11C11/56

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

公开(公告)号：US10521142B2

公开(公告)日：2019-12-31

申请号：US16260142

申请日：2019-01-29

Applicant: Silicon Motion Inc.

Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

IPC: G11C11/34 ,  G11C16/04 ,  G06F3/06 ,  G06F12/02 ,  G11C11/56

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

公开(公告)号：US20190155531A1

公开(公告)日：2019-05-23

申请号：US16260142

申请日：2019-01-29

Applicant: Silicon Motion Inc.

Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

IPC: G06F3/06 ,  G11C11/56 ,  G06F12/02

CPC classification number: G06F3/0634 ,  G06F3/0604 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C11/5628 ,  G11C11/5642 ,  Y02D10/13

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

公开(公告)号：US09256529B2

公开(公告)日：2016-02-09

申请号：US14596236

申请日：2015-01-14

Applicant: Silicon Motion Inc.

Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

IPC: G11C16/04 ,  G06F12/02

CPC classification number: G06F3/0634 ,  G06F3/0604 ,  G06F3/064 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C11/5628 ,  G11C11/5642 ,  Y02D10/13

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

公开(公告)号：US20250156093A1

公开(公告)日：2025-05-15

申请号：US19023324

申请日：2025-01-16

Applicant: Silicon Motion, Inc.

Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

IPC: G06F3/06 ,  G06F12/02 ,  G11C11/56

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

公开(公告)号：US11914873B2

公开(公告)日：2024-02-27

申请号：US17324121

申请日：2021-05-19

Applicant: Silicon Motion, Inc.

Inventor： Tsung-Chieh Yang ,  Chun-Chieh Kuo ,  Ching-Hui Lin ,  Yang-Chih Shen

IPC: G11C7/00 ,  G06F3/06 ,  G06F12/02 ,  G11C11/56

CPC classification number: G06F3/0634 ,  G06F3/064 ,  G06F3/0604 ,  G06F3/0679 ,  G06F12/0246 ,  G11C11/5628 ,  G11C11/5642 ,  G06F2212/7201 ,  G06F2212/7206 ,  Y02D10/00

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

公开(公告)号：US11733895B2

公开(公告)日：2023-08-22

申请号：US17671603

申请日：2022-02-15

Applicant: Silicon Motion, Inc.

Inventor： Ching-Hui Lin

IPC: G06F12/00 ,  G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0631 ,  G06F3/0656 ,  G06F3/0679

Abstract: The present invention provides a control method of the flash memory controller. In the control method, after receiving a deallocate command from a host device, the flash memory controller will update a valid page count table, a detailed valid page count table and/or a zone valid page count table according to deallocate command, for the flash memory controller to efficiently and quickly determine if any one of the zones does not have any valid data, so that the flash memory controller can recommend the host device to send a reset command to reset the zone.

公开(公告)号：US20220269440A1

公开(公告)日：2022-08-25

申请号：US17394427

申请日：2021-08-05

Applicant: Silicon Motion, Inc.

Inventor： Ching-Hui Lin

IPC: G06F3/06

Abstract: The present invention provides a control method of a flash memory controller, wherein the flash memory controller is configured to access a flash memory module, and the control method includes the steps of: receiving a settling command from a host device to configure a portion of the flash memory module as a zoned namespace; and determining a number of blocks within each block according to a size of each zone and a size of each block within the flash memory module.