公开(公告)号：US20180155824A1

公开(公告)日：2018-06-07

申请号：US15801734

申请日：2017-11-02

Applicant: Smoltek AB

Inventor： Jonas S. T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: C23C16/26 ,  H01L23/522 ,  H01L23/532 ,  H01L23/367 ,  H01L23/373 ,  H01L21/768 ,  H01L21/48 ,  G02B6/26 ,  C23C16/503

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed. The method includes depositing a catalyst layer on the substrate; depositing an insulator layer on the catalyst layer; providing a continuous patterned conducting helplayer on the insulator layer; creating via holes through the insulator layer from the conducting helplayer to the catalyst layer; growing the one or more nanostructures on the catalyst layer through the via holes; and selectively removing the conducting helplayer after growing the one or more nanostructure.

公开(公告)号：US12183520B2

公开(公告)日：2024-12-31

申请号：US17911698

申请日：2021-04-13

Applicant: Smoltek AB

Inventor： M Shafiqul Kabir ,  Vincent Desmaris ,  Anders Johansson ,  Ola Tiverman ,  Karl Lundahl ,  Rickard Andersson ,  Muhammad Amin Saleem ,  Maria Bylund ,  Victor Marknäs

IPC: H01G9/04 ,  H01G9/07 ,  H01G9/15 ,  H01L49/02 ,  H05K1/18

Abstract: A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.

公开(公告)号：US11348890B2

公开(公告)日：2022-05-31

申请号：US17077237

申请日：2020-10-22

Applicant: Smoltek AB

Inventor： M Shafiqul Kabir ,  Anders Johansson ,  Vincent Desmaris ,  Muhammad Amin Saleem

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/31 ,  H01L23/498

Abstract: An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.

公开(公告)号：US20220013305A1

公开(公告)日：2022-01-13

申请号：US17283105

申请日：2019-10-07

Applicant: Smoltek AB

Inventor： Vincent Desmaris ,  Rickard Andersson ,  Muhammad Amin Saleem ,  Maria Bylund ,  Anders Johansson ,  Fredrik Liljeberg ,  Ola Tiverman ,  M Shafiqul Kabir

IPC: H01G11/36 ,  H05K1/18 ,  H01G11/56 ,  H01M10/0585 ,  H01M50/11

Abstract: A discrete metal-insulator-metal (MIM) energy storage component, the energy storage component comprising: a MIM-arrangement comprising: a first electrode layer; a plurality of conductive nanostructures grown from the first electrode layer; a conduction controlling material covering each nanostructure in the plurality of conductive nanostructures and the first electrode layer uncovered by the conductive nanostructures; and a second electrode layer covering the conduction controlling material; a first connecting structure for external electrical connection of the capacitor component; a second connecting structure for external electrical connection of the capacitor component; and an electrically insulating encapsulation material at least partly embedding the MIM-arrangement.

公开(公告)号：US20190051591A1

公开(公告)日：2019-02-14

申请号：US16078331

申请日：2017-02-24

Applicant: Smoltek AB

Inventor： M Shafiqul Kabir ,  Anders Johansson ,  Muhammad Amin Saleem ,  Peter Enoksson ,  Vincent Desmaris ,  Rickard Andersson

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/14 ,  H01L23/538

CPC classification number: H01L23/49827 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49811 ,  H01L23/50 ,  H01L23/5389

Abstract: An interposer device comprising an interposer substrate; a plurality of conducting vias extending through the interposer substrate; a conductor pattern on the interposer substrate, and a nanostructure energy storage device. The nanostructure energy storage device comprises at least a first plurality of conductive nanostructures formed on the interposer substrate; a conduction controlling material embedding each nanostructure in the first plurality of conductive nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material, wherein the first electrode and the second electrode are configured to allow electrical connection of the nanostructure energy storage device to the integrated circuit.

公开(公告)号：US20240290993A1

公开(公告)日：2024-08-29

申请号：US18569299

申请日：2022-06-27

Applicant: SMOLTEK AB

Inventor： Rickard Andersson ,  Maria Bylund ,  Vincent Desmaris ,  Qi Li ,  Victor Marknäs ,  Elisa Passalacqua ,  Muhammad Amin Saleem ,  Fabian Wenger ,  Simin Zare

IPC: H01M8/0234 ,  B82Y30/00 ,  B82Y40/00 ,  C25B13/02 ,  C25B13/05 ,  H01M8/0245 ,  H01M8/0258

CPC classification number: H01M8/0234 ,  B82Y40/00 ,  C25B13/02 ,  C25B13/05 ,  H01M8/0245 ,  H01M8/0258 ,  B82Y30/00

Abstract: A separator element arrangement for an electrochemical cell is presented. The separator element arrangement comprises a separator element and a diffusion layer arranged adjacent to the separator element. The separator element comprises a plurality of elongated nanostructures. At least some of the elongated nanostructures are arranged to connect the separator element to the diffusion layer by extending into the diffusion layer.

公开(公告)号：US20230147809A1

公开(公告)日：2023-05-11

申请号：US17911698

申请日：2021-04-13

Applicant: Smoltek AB

Inventor： M Shafiqul Kabir ,  Vincent Desmaris ,  Anders Johansson ,  Ola Tiverman ,  Karl Lundahl ,  Rickard Andersson ,  Muhammad Amin Saleem ,  Maria Bylund ,  Victor Marknäs

IPC: H01G9/04 ,  H05K1/18 ,  H01G9/15 ,  H01G9/07

CPC classification number: H01G9/04 ,  H01L28/91 ,  H05K1/181 ,  H01G9/15 ,  H01G9/07 ,  H05K2201/10015

Abstract: A MIM energy storage device comprising a bottom electrode; a plurality of electrically conductive vertical nanostructures; a bottom conduction-controlling layer conformally coating each nanostructure in the plurality of electrically conductive vertical nanostructures; and a layered stack of alternating conduction-controlling layers and electrode layers conformally coating the bottom conduction-controlling layer, the layered stack including at least a first odd-numbered electrode layer at a bottom of the layered stack, a first odd-numbered conduction-controlling layer directly on the first odd-numbered electrode layer, and a first even-numbered electrode layer directly on the first odd-numbered conduction-controlling layer. Each even-numbered electrode layer in the layered stack is electrically conductively connected to the bottom electrode; and each odd-numbered electrode layer in the layered stack is electrically conductively connected to any other odd-numbered electrode layer in the layered stack.

公开(公告)号：US20200091065A1

公开(公告)日：2020-03-19

申请号：US16463970

申请日：2018-08-23

Applicant: Smoltek AB

Inventor： M. Shafiqul Kabir ,  Anders Johansson ,  Muhammad Amin Saleem ,  Rickard Andersson ,  Vincent Desmaris

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/29 ,  H01L21/768 ,  H01L49/02

Abstract: An interposer device comprising a first conductor pattern on a first side defining a portion of the interposer device to be covered by a first electrical circuit element; and a second conductor pattern on a second side to be connected to a second electrical circuit element. The second conductor pattern is electrically coupled to the first conductor pattern. The interposer device further comprises a plurality of nanostructure energy storage devices arranged within the portion of the interposer device to be covered by the first electrical circuit element. Each of the nanostructure energy storage devices comprises at least a first plurality of conductive nanostructures; a conduction controlling material embedding the nanostructures; a first electrode connected to each nanostructure in the first plurality of nanostructures; and a second electrode separated from each nanostructure in the first plurality of nanostructures by the conduction controlling material.

公开(公告)号：US20190385943A1

公开(公告)日：2019-12-19

申请号：US16550706

申请日：2019-08-26

Applicant: Smoltek AB

Inventor： M. Shafiqul Kabir ,  Anders Johansson ,  Muhammad Amin Saleem ,  Peter Enoksson ,  Vincent Desmaris ,  Rickard Andersson

IPC: H01L23/498 ,  H01L23/538 ,  H01L23/14 ,  H01L21/48

Abstract: A nanostructure energy storage device comprising: at least a first plurality of conductive nanostructures provided on an electrically insulating surface portion of a substrate; a conduction controlling material embedding each nanostructure in said first plurality of conductive nanostructures; a first electrode connected to each nanostructure in said first plurality of nanostructures; and a second electrode separated from each nanostructure in said first plurality of nanostructures by said conduction controlling material, wherein said first electrode and said second electrode are configured to allow electrical connection of said nanostructure energy storage device to an integrated circuit.

公开(公告)号：US20150004092A1

公开(公告)日：2015-01-01

申请号：US14489903

申请日：2014-09-18

Applicant: Smoltek AB

Inventor： Jonas T. Berg ,  Vincent Desmaris ,  Mohammad Shafiqul Kabir ,  Muhammad Amin Saleem ,  David Brud

IPC: C01B31/02

CPC classification number: C23C16/26 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/15 ,  C23C16/503 ,  G02B6/26 ,  H01B13/0026 ,  H01L21/0237 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/4871 ,  H01L21/76802 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/3677 ,  H01L23/3737 ,  H01L23/49827 ,  H01L23/5226 ,  H01L23/53276 ,  H01L29/0665 ,  H01L29/66439 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.