公开(公告)号：US20240313653A1

公开(公告)日：2024-09-19

申请号：US18678510

申请日：2024-05-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Wei Da ,  Stephen Brink ,  Joseph Maurice Khayat

IPC: H02M3/158 ,  H02M1/08 ,  H02M1/34

CPC classification number: H02M3/158 ,  H02M1/08 ,  H02M1/344

Abstract: A switching regulator includes a low-side switching transistor, a snubber transistor, a first pull-down transistor, and a second pull-down transistor. The low-side switching transistor includes a first current terminal and a second current terminal. The first current terminal is coupled to a switching node. The second current terminal is coupled to a ground terminal. The snubber transistor includes a first current terminal, a second current terminal, and a control terminal. The first current terminal is coupled to the switching node. The second current terminal is coupled to the ground terminal. The first pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal. The second pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal.

公开(公告)号：US10192863B2

公开(公告)日：2019-01-29

申请号：US14221432

申请日：2014-03-21

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/06

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

公开(公告)号：US20160079227A1

公开(公告)日：2016-03-17

申请号：US14952074

申请日：2015-11-25

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/732 ,  H01L29/08 ,  H01L29/861 ,  H01L29/735

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

公开(公告)号：US09231403B2

公开(公告)日：2016-01-05

申请号：US14222850

申请日：2014-03-24

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H01L21/8222 ,  H02H9/04

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

Abstract translation: 公开了静电放电（ESD）保护电路（图3C）。 该电路包括具有基极，集电极和发射极的双极晶体管（304）。 多个二极管（308-316）中的每一个具有耦合到基极的第一端子和耦合到集电极的第二端子。 集电极连接到第一端子（V +）。 发射极连接到第一电源端子（V-）。

公开(公告)号：US12027978B2

公开(公告)日：2024-07-02

申请号：US17828259

申请日：2022-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Wei Da ,  Stephen Brink ,  Joseph Maurice Khayat

IPC: H02M3/158 ,  H02M1/08 ,  H02M1/34

CPC classification number: H02M3/158 ,  H02M1/08 ,  H02M1/344

Abstract: A switching regulator includes a low-side switching transistor, a snubber transistor, a first pull-down transistor, and a second pull-down transistor. The low-side switching transistor includes a first current terminal and a second current terminal. The first current terminal is coupled to a switching node. The second current terminal is coupled to a ground terminal. The snubber transistor includes a first current terminal, a second current terminal, and a control terminal. The first current terminal is coupled to the switching node. The second current terminal is coupled to the ground terminal. The first pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal. The second pull-down transistor is coupled between the control terminal of the snubber transistor and the ground terminal.

公开(公告)号：US09997511B2

公开(公告)日：2018-06-12

申请号：US14952074

申请日：2015-11-25

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H01L23/62 ,  H01L27/02 ,  H02H9/04 ,  H01L21/8222 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H01L21/8224 ,  H01L29/66

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

公开(公告)号：US09899368B2

公开(公告)日：2018-02-20

申请号：US14952178

申请日：2015-11-25

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H01L23/62 ,  H01L27/02 ,  H02H9/04 ,  H01L21/8222 ,  H01L29/08 ,  H01L29/10 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H01L21/8224 ,  H01L29/66

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

公开(公告)号：US20160079750A1

公开(公告)日：2016-03-17

申请号：US14952178

申请日：2015-11-25

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

公开(公告)号：US20150270708A1

公开(公告)日：2015-09-24

申请号：US14222850

申请日：2014-03-24

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Lili Yu

IPC: H02H9/04 ,  H01L21/8222

CPC classification number: H01L27/0262 ,  H01L21/8222 ,  H01L21/8224 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0288 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66113 ,  H01L29/732 ,  H01L29/735 ,  H01L29/861 ,  H02H9/046

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−).

Abstract translation: 公开了静电放电（ESD）保护电路（图3C）。 该电路包括具有基极，集电极和发射极的双极晶体管（304）。 多个二极管（308-316）中的每一个具有耦合到基极的第一端子和耦合到集电极的第二端子。 集电极连接到第一端子（V +）。 发射极连接到第一电源端子（V-）。

公开(公告)号：US20240178318A1

公开(公告)日：2024-05-30

申请号：US18072201

申请日：2022-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Martin B. Mollat ,  Henry L. Edwards ,  Alexei Sadovnikov

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/7835 ,  H01L21/823814 ,  H01L29/66659 ,  H01L29/7816

Abstract: An integrated circuit includes a source region and a drain region spaced apart and extending into a semiconductor layer. A gate electrode extends between the source and the drain regions, and a dielectric layer is between the gate electrode and the semiconductor layer. The dielectric layer includes a first portion having a first thickness and a second portion having a second greater second thickness and a lateral perimeter surrounding the source region. The lateral perimeter includes a first edge having a first linear segment extending between the source region and the drain region along a first direction and a second edge having a second linear segment extending over the semiconductor layer along a different second direction. A fillet of the second portion connects the first linear segment and the second linear segment of the lateral perimeter.