公开(公告)号：US09231025B2

公开(公告)日：2016-01-05

申请号：US14292119

申请日：2014-05-30

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards ,  Kenneth James Maggio ,  Toan Tran ,  Jihong Chen ,  Jeffrey R. Debord

IPC: H01L27/00 ,  H01L27/16 ,  H01L35/04 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/265 ,  H01L37/00

CPC classification number: H01L35/34 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823878 ,  H01L27/0617 ,  H01L27/092 ,  H01L27/10876 ,  H01L27/16 ,  H01L29/34 ,  H01L35/04 ,  H01L37/00 ,  H01L2924/13091

Abstract: An integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming field oxide in isolation trenches to isolate the CMOS transistors and thermoelectric elements of the embedded thermoelectric device. N-type dopants are implanted into the substrate to provide at least 1×1018 cm−3 n-type dopants in n-type thermoelectric elements and the substrate under the field oxide between the n-type thermoelectric elements. P-type dopants are implanted into the substrate to provide at least 1×1018 cm−3 p-type dopants in p-type thermoelectric elements and the substrate under the field oxide between the p-type thermoelectric elements. The n-type dopants and p-type dopants may be implanted before the field oxide are formed, after the isolation trenches for the field oxide are formed and before dielectric material is formed in the isolation trenches, and/or after the field oxide is formed.

Abstract translation: 可以通过在隔离沟槽中形成场氧化物来隔离嵌入式热电装置的CMOS晶体管和热电元件来形成包含CMOS晶体管和嵌入式热电装置的集成电路。 将N型掺杂剂注入到衬底中以在n型热电元件中提供至少1×1018cm-3n型掺杂剂和在n型热电元件之间的场氧化物下的衬底。 P型掺杂剂被注入到衬底中以在p型热电元件中提供至少1×1018cm-3p型掺杂剂，并且在p型热电元件之间的场氧化物之下提供衬底。 在形成场氧化物的隔离沟槽之后，在隔离沟槽中形成介电材料之前和/或在形成场氧化物之后，可以在形成场氧化物之前，注入n型掺杂剂和p型掺杂剂 。

公开(公告)号：US09437799B2

公开(公告)日：2016-09-06

申请号：US14957314

申请日：2015-12-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry Litzmann Edwards ,  Kenneth James Maggio ,  Toan Tran ,  Jihong Chen ,  Jeffrey R. Debord

IPC: H01L27/00 ,  H01L35/34 ,  H01L27/16 ,  H01L27/092 ,  H01L27/108

CPC classification number: H01L35/34 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823878 ,  H01L27/0617 ,  H01L27/092 ,  H01L27/10876 ,  H01L27/16 ,  H01L29/34 ,  H01L35/04 ,  H01L37/00 ,  H01L2924/13091

Abstract: An integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming field oxide in isolation trenches to isolate the CMOS transistors and thermoelectric elements of the embedded thermoelectric device. N-type dopants are implanted into the substrate to provide at least 1×1018 cm−3 n-type dopants in n-type thermoelectric elements and the substrate under the field oxide between the n-type thermoelectric elements. P-type dopants are implanted into the substrate to provide at least 1×1018 cm−3 p-type dopants in p-type thermoelectric elements and the substrate under the field oxide between the p-type thermoelectric elements. The n-type dopants and p-type dopants may be implanted before the field oxide are formed, after the isolation trenches for the field oxide are formed and before dielectric material is formed in the isolation trenches, and/or after the field oxide is formed.

Abstract translation: 可以通过在隔离沟槽中形成场氧化物来隔离嵌入式热电装置的CMOS晶体管和热电元件来形成包含CMOS晶体管和嵌入式热电装置的集成电路。 将N型掺杂剂注入到衬底中以在n型热电元件中提供至少1×1018cm-3n型掺杂剂和在n型热电元件之间的场氧化物下的衬底。 P型掺杂剂被注入到衬底中以在p型热电元件中提供至少1×1018cm-3p型掺杂剂，并且在p型热电元件之间的场氧化物之下提供衬底。 在形成场氧化物的隔离沟槽之后，在隔离沟槽中形成介电材料之前和/或在形成场氧化物之后，可以在形成场氧化物之前，注入n型掺杂剂和p型掺杂剂 。

公开(公告)号：US20160155925A1

公开(公告)日：2016-06-02

申请号：US14957314

申请日：2015-12-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry Litzmann Edwards ,  Kenneth James Maggio ,  Toan Tran ,  Jihong Chen ,  Jeffrey R. Debord

IPC: H01L35/34 ,  H01L27/16

CPC classification number: H01L35/34 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/823878 ,  H01L27/0617 ,  H01L27/092 ,  H01L27/10876 ,  H01L27/16 ,  H01L29/34 ,  H01L35/04 ,  H01L37/00 ,  H01L2924/13091

Abstract: An integrated circuit containing CMOS transistors and an embedded thermoelectric device may be formed by forming field oxide in isolation trenches to isolate the CMOS transistors and thermoelectric elements of the embedded thermoelectric device. N-type dopants are implanted into the substrate to provide at least 1×1018 cm−3 n-type dopants in n-type thermoelectric elements and the substrate under the field oxide between the n-type thermoelectric elements. P-type dopants are implanted into the substrate to provide at least 1×1018 cm−3 p-type dopants in p-type thermoelectric elements and the substrate under the field oxide between the p-type thermoelectric elements. The n-type dopants and p-type dopants may be implanted before the field oxide are formed, after the isolation trenches for the field oxide are formed and before dielectric material is formed in the isolation trenches, and/or after the field oxide is formed.

Abstract translation: 可以通过在隔离沟槽中形成场氧化物来隔离嵌入式热电装置的CMOS晶体管和热电元件来形成包含CMOS晶体管和嵌入式热电装置的集成电路。 将N型掺杂剂注入到衬底中以在n型热电元件中提供至少1×1018cm-3n型掺杂剂和在n型热电元件之间的场氧化物下的衬底。 P型掺杂剂被注入到衬底中以在p型热电元件中提供至少1×1018cm-3p型掺杂剂，并且在p型热电元件之间的场氧化物之下提供衬底。 在形成场氧化物的隔离沟槽之后，在隔离沟槽中形成介电材料之前和/或在形成场氧化物之后，可以在形成场氧化物之前，注入n型掺杂剂和p型掺杂剂 。