公开(公告)号：US20170358568A1

公开(公告)日：2017-12-14

申请号：US15665575

申请日：2017-08-01

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/747 ,  H01L29/45 ,  H01L29/74 ,  H01L29/06

CPC classification number: H01L27/0262 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/456 ,  H01L29/66386 ,  H01L29/7436 ,  H01L29/747

Abstract: A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.

公开(公告)号：US10192863B2

公开(公告)日：2019-01-29

申请号：US14221432

申请日：2014-03-21

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/06

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

公开(公告)号：US10930641B2

公开(公告)日：2021-02-23

申请号：US16210753

申请日：2018-12-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/06

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

公开(公告)号：US20150270257A1

公开(公告)日：2015-09-24

申请号：US14221432

申请日：2014-03-21

Applicant: Texas Instruments Incorporated

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L21/8222 ,  H01L29/06

CPC classification number: H01L27/0262 ,  H01L27/0259 ,  H01L29/0649

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

Abstract translation: 公开了一种用于集成电路的静电放电（ESD）保护电路（图2A）。 电路形成在具有第一导电类型的基板（P-EPI）上。 在衬底的表面下方形成具有第二导电类型的掩埋层（NBL 240）。 第一端子（206）和第二端子（204）形成在基板的表面。 第一ESD保护装置（232）在第一端子和埋层之间具有第一电流路径。 第二ESD保护装置（216）具有与第一电流路径串联的第二电流路径，以及在第二端子和埋层之间。

公开(公告)号：US20190109128A1

公开(公告)日：2019-04-11

申请号：US16210753

申请日：2018-12-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry L. Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/06

Abstract: An electrostatic discharge (ESD) protection circuit (FIG. 2A) for an integrated circuit is disclosed. The circuit is formed on a substrate (P-EPI) having a first conductivity type. A buried layer (NBL 240) having a second conductivity type is formed below a face of the substrate. A first terminal (206) and a second terminal (204) are formed at a face of the substrate. A first ESD protection device (232) has a first current path between the first terminal and the buried layer. A second ESD protection device (216) has a second current path in series with the first current path and between the second terminal and the buried layer.

公开(公告)号：US20150371985A1

公开(公告)日：2015-12-24

申请号：US14311205

申请日：2014-06-20

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry Litzmann Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/66 ,  H01L29/747

CPC classification number: H01L27/0262 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/456 ,  H01L29/66386 ,  H01L29/7436 ,  H01L29/747

Abstract: A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.

Abstract translation: 第一可控硅整流器具有在第一方向上的击穿电压和在第二方向上的击穿电压。 第二可控硅整流器具有在第一方向上具有比第一可控硅整流器更高的幅度的击穿电压，以及在第二方向上具有比第一可控硅整流器更低的幅度的击穿电压。 双向静电放电（ESD）结构利用了第一个可控硅整流器和第二个可控硅整流器来提供双向保护。

公开(公告)号：US11574903B2

公开(公告)日：2023-02-07

申请号：US15665575

申请日：2017-08-01

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L27/02 ,  H01L29/747 ,  H01L29/66 ,  H01L29/45 ,  H01L29/74 ,  H01L29/06

Abstract: A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.

公开(公告)号：US09754929B2

公开(公告)日：2017-09-05

申请号：US14311205

申请日：2014-06-20

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards ,  Akram A. Salman ,  Md Iqbal Mahmud

IPC: H01L21/8238 ,  H01L27/02 ,  H01L29/747 ,  H01L29/66 ,  H01L29/45 ,  H01L29/74 ,  H01L29/06

CPC classification number: H01L27/0262 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/456 ,  H01L29/66386 ,  H01L29/7436 ,  H01L29/747

Abstract: A first silicon controlled rectifier has a breakdown voltage in a first direction and a breakdown voltage in a second direction. A second silicon controlled rectifier has a breakdown voltage with a higher magnitude than the first silicon controlled rectifier in the first direction, and a breakdown voltage with a lower magnitude than the first silicon controlled rectifier in the second direction. A bidirectional electrostatic discharge (ESD) structure utilizes both the first silicon controlled rectifier and the second silicon controlled rectifier to provide bidirectional protection.