公开(公告)号：US20210062115A1

公开(公告)日：2021-03-04

申请号：US16962260

申请日：2019-01-15

Applicant: Tokuyama Corporation

Inventor： Takafumi Shimoda ,  Takayuki Negishi ,  Yuki Kikkawa ,  Seiji Tono

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02

Abstract: A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

公开(公告)号：US12195658B2

公开(公告)日：2025-01-14

申请号：US17636539

申请日：2021-08-06

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki Kikkawa ,  Tomoaki Sato ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C09K13/00 ,  H01L21/3213

Abstract: Provided is a treatment liquid for etching a transition metal on a semiconductor wafer, the treatment liquid comprising: (A) a hypohalite ion or periodate ion; and (B) an alkylammonium salt represented by the following Formula (1). (wherein a is an integer from 6 to 20, R1, R2, and R3 are independently a hydrogen atom or an alkyl group having carbon number from 1 to 20, and X− is a bromine-containing ion), and a method of etching a transition metal by bringing the treatment liquid for semiconductor wafers into contact with the transition metal used in a semiconductor formation process.

公开(公告)号：US20240182404A1

公开(公告)日：2024-06-06

申请号：US18440134

申请日：2024-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C07C211/63 ,  H01L21/321 ,  H01L21/3213

CPC classification number: C07C211/63 ,  H01L21/3212 ,  H01L21/32134

Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

公开(公告)号：US12247298B2

公开(公告)日：2025-03-11

申请号：US17642059

申请日：2021-11-25

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C23F1/40 ,  H01L21/3213

Abstract: The present invention provides a semiconductor wafer treatment liquid, the treatment liquid including at least one hypohalite ion, and at least one anion species selected from halate ion, halite ion and halide ion, wherein at least one of the anion species has a content of 0.30 mol/L or more and 6.00 mol/L or less relative to the treatment liquid.

公开(公告)号：US11572533B2

公开(公告)日：2023-02-07

申请号：US17057207

申请日：2019-05-20

Applicant: Tokuyama Corporation

Inventor： Takafumi Shimoda ,  Yuki Kikkawa ,  Takayuki Negishi ,  Seiji Tono

IPC: C07C209/66 ,  C11D7/32 ,  C07C209/68 ,  C07C211/63 ,  C11D11/00 ,  H01L21/02

Abstract: A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

公开(公告)号：US12024663B2

公开(公告)日：2024-07-02

申请号：US17419058

申请日：2020-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Yuki Kikkawa ,  Tomoaki Sato ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C09K13/06 ,  H01L21/304

CPC classification number: C09K13/06 ,  H01L21/304

Abstract: Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided.




(In the Formula, “a” is an integer from 6 to 20; R1, R2, and R3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X− is, for example, a chloride ion.).

公开(公告)号：US11674230B2

公开(公告)日：2023-06-13

申请号：US17261387

申请日：2020-07-08

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C23F1/40 ,  H01L21/306

CPC classification number: C23F1/40 ,  H01L21/30604

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

公开(公告)号：US20210309942A1

公开(公告)日：2021-10-07

申请号：US17057207

申请日：2019-05-20

Applicant: Tokuyama Corporation

Inventor： Takafumi Shimoda ,  Yuki Kikkawa ,  Takayuki Negishi ,  Seiji Tono

IPC: C11D7/32 ,  C11D11/00 ,  C07C209/68 ,  C07C211/63 ,  H01L21/02

Abstract: A method for producing a quaternary alkylammonium hypochlorite solution, includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

公开(公告)号：US12247299B2

公开(公告)日：2025-03-11

申请号：US18139559

申请日：2023-04-26

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C23F1/40 ,  H01L21/306

Abstract: Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

公开(公告)号：US11932590B2

公开(公告)日：2024-03-19

申请号：US17266283

申请日：2020-09-23

Applicant: TOKUYAMA CORPORATION

Inventor： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC: C07C211/63 ,  H01L21/321 ,  H01L21/3213

CPC classification number: C07C211/63 ,  H01L21/3212 ,  H01L21/32134

Abstract: Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.