公开(公告)号：US10910425B2

公开(公告)日：2021-02-02

申请号：US16432504

申请日：2019-06-05

Applicant: TOPPAN PRINTING CO., LTD.

Inventor： Kazuto Yamamoto ,  Yo Sakata

IPC: H01L27/146 ,  G02B5/10 ,  H04N9/07 ,  H04N5/369

Abstract: A solid-state image sensor including a semiconductor layer having a light incident side, a support substrate positioned on an opposite side of the light incident side of the semiconductor layer, photoelectric conversion elements formed two-dimensionally in the semiconductor layer, light reflection structures formed on a surface of the support substrate which faces toward the semiconductor layer, and positioned such that the light reflection structures face the photoelectric conversion elements, respectively, and an interlayer insulating layer formed between adjacent ones of the light reflection structures. The light reflection structures include a light transmission layer and a reflective metal that covers a surface of the light transmission layer opposite to a surface facing the semiconductor layer, and the reflective metal has a concave curved surface facing the photoelectric conversion elements.