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    Image sensor color filter array pattern
    2.
    发明授权
    Image sensor color filter array pattern 有权

    公开(公告)号：US10349015B2

    公开(公告)日：2019-07-09

    申请号：US15580808

    申请日：2015-12-01

    Applicant: TRUSTEES OF DARTMOUTH COLLEGE

    Inventor： Eric R. Fossum ,  Leo Anzagira

    IPC: H04N9/04 ,  H04N5/378 ,  H01L27/146 ,  H04N5/3745

    Abstract: Some embodiments provide an image sensor color filter array pattern that mitigates and/or minimizes the impact of optical and carrier crosstalk on color reproduction accuracy and/or signal-to-noise, the color filter array comprising a plurality of kernels, wherein each kernel has an identical configuration of color filter elements comprising primary color filter elements corresponding to at least three respective different primary colors, and a plurality of secondary color filter elements. A respective one of the secondary color filter elements is disposed as a nearest neighbor to and between every pair of primary color filter elements of different colors in the kernel, with the respective secondary color filter element representing a secondary color that is a combination of the different colors of the primary color filter elements that are nearest neighbors to the respective secondary color filter element.

    Speckle-suppressing lighting system
    3.
    发明授权
    Speckle-suppressing lighting system 有权

    公开(公告)号：US12001028B2

    公开(公告)日：2024-06-04

    申请号：US17953129

    申请日：2022-09-26

    Applicant: THE TRUSTEES OF DARTMOUTH COLLEGE

    Inventor： Xiaoxin Wang ,  Charles J. Carver, Jr. ,  Eric R. Fossum ,  Jifeng Liu ,  Xia Zhou ,  Nicholas R. Shade

    IPC: G02B27/48 ,  F21V8/00

    CPC classification number: G02B27/48 ,  G02B6/0006 ,  G02B6/0008

    Abstract: A speckle-suppressing lighting system includes an optical waveguide, a first solid-state light source, a second solid-state light source, and a diffuser. The optical waveguide has a proximal end and a distal end. At least part of the diffuser is between the proximal end and the distal end. The first solid-state light source is optically coupled to the optical waveguide near the proximal end, and emits a first light beam that propagates toward the distal end and has a first center wavelength. The second solid-state light source is optically coupled to the optical waveguide near the proximal end, and emits a second light beam that propagates toward the distal end and has a second center wavelength differing from the first center wavelength. The diffuser diffuses the first light beam and the second light beam.

    GATELESS RESET FOR IMAGE SENSOR PIXELS
    4.
    发明申请
    GATELESS RESET FOR IMAGE SENSOR PIXELS 审中-公开

    公开(公告)号：US20190259794A1

    公开(公告)日：2019-08-22

    申请号：US16405335

    申请日：2019-05-07

    Applicant: TRUSTEES OF DARTMOUTH COLLEGE

    Inventor： Eric R. Fossum ,  Jiaju Ma

    IPC: H01L27/146 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/378

    Abstract: Some embodiments of the present disclosure are directed to an image sensor pixel that is configured for gateless reset of a floating diffusion. Some embodiments are directed to an image sensor comprising a plurality of pixels, at least one pixel comprising a floating diffusion formed in a semiconductor substrate; a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion; and a reset drain formed in the semiconductor substrate and spaced away from the floating diffusion by an intervening semiconductor region having a dopant type opposite to the dopant type of the reset drain and the floating diffusion, wherein the reset drain is configured to selectively reset the electrostatic potential of the floating diffusion in response to a voltage pulse applied to the reset drain.

    CMOS IMAGE SENSOR WITH PUMP GATE AND EXTREMELY HIGH CONVERSION GAIN
    5.
    发明申请
    CMOS IMAGE SENSOR WITH PUMP GATE AND EXTREMELY HIGH CONVERSION GAIN 审中-公开

    公开(公告)号：US20190252428A1

    公开(公告)日：2019-08-15

    申请号：US16397841

    申请日：2019-04-29

    Applicant: TRUSTEES OF DARTMOUTH COLLEGE

    Inventor： JIAJU MA ,  Eric R. Fossum

    IPC: H01L27/146

    CPC classification number: H01L27/1464 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

    Abstract: Some embodiments relate to an image sensor pixel comprising a transfer gate formed on a first surface of a semiconductor substrate, a floating diffusion formed in the first surface of the semiconductor substrate, and a buried-well vertically pinned photodiode having a charge accumulation/storage region disposed substantially beneath the transfer gate. The transfer gate is spaced away from the floating diffusion such that an intervening semiconductor region provides a potential barrier to charge flow from beneath the transfer gate to the floating diffusion. The transfer gate is operable to control a vertical pump gate to selectively transfer charge from the charge accumulation/storage region to the floating diffusion by pumping charge from the buried charge accumulation/storage region underlying the transfer gate, over the potential barrier, and out to the floating diffusion, such that full charge transfer can be achieved without overlapping the edge of the transfer gate with the floating diffusion.

    UV/VIS/IR backside-illuminated photon-counting sensor
    8.
    发明授权
    UV/VIS/IR backside-illuminated photon-counting sensor 有权

    公开(公告)号：US11522098B2

    公开(公告)日：2022-12-06

    申请号：US15478244

    申请日：2017-04-03

    Applicant: TRUSTEES OF DARTMOUTH COLLEGE

    Inventor： Zhiyuan Wang ,  Jiaju Ma ,  Jifeng Liu ,  Eric R. Fossum ,  Xiaoxin Wang

    IPC: H01L31/113 ,  H01L31/0352 ,  H01L27/146

    Abstract: Some embodiments of the present disclosure provide a semiconductor-based photon-counting sensor comprising a metal-insulator-semiconductor internal photoemission (e.g., thermionic-emission) detector formed on and/or in a first surface of a semiconductor substrate, and at least one jot formed on and/or in a second side of a semiconductor substrate. The at least one MIS photoemission detector and the at least one jot are configured such that a photocarrier generated in response to a photon incident on the MIS thermionic-emission detector is readout by the at least one jot.

    CMOS image sensor with pump gate and extremely high conversion gain
    10.
    发明授权
    CMOS image sensor with pump gate and extremely high conversion gain 有权

    公开(公告)号：US11251215B2

    公开(公告)日：2022-02-15

    申请号：US16397841

    申请日：2019-04-29

    Applicant: TRUSTEES OF DARTMOUTH COLLEGE

    Inventor： Jiaju Ma ,  Eric R. Fossum

    IPC: H01L27/146

    Abstract: Some embodiments relate to an image sensor pixel comprising a transfer gate formed on a first surface of a semiconductor substrate, a floating diffusion formed in the first surface of the semiconductor substrate, and a buried-well vertically pinned photodiode having a charge accumulation/storage region disposed substantially beneath the transfer gate. The transfer gate is spaced away from the floating diffusion such that an intervening semiconductor region provides a potential barrier to charge flow from beneath the transfer gate to the floating diffusion. The transfer gate is operable to control a vertical pump gate to selectively transfer charge from the charge accumulation/storage region to the floating diffusion by pumping charge from the buried charge accumulation/storage region underlying the transfer gate, over the potential barrier, and out to the floating diffusion, such that full charge transfer can be achieved without overlapping the edge of the transfer gate with the floating diffusion.

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