Abstract:
A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell.
Abstract:
A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination.
Abstract:
A solar module includes a solar panel and a wireless power transmission module coupled to the solar panel for transmitting power generated by the solar panel wirelessly.
Abstract:
A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.
Abstract:
A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacers. The absorber layer is partially in contact with the spacers and partially in direct contact with the back contact layer. The solar cell substrate is heated to form voids between the absorber layer and the back contact layer at the locations of the spacers.
Abstract:
Provided is a method for identifying material junctions and doping characteristics in semiconductor and other materials by illuminating the material and measuring voltage. A correlation between penetration depth of light and wavelength of light is established for a material. Photons are applied to materials such as semiconductor materials to induce charge. The photons are applied by exposing the material to light having a range of wavelengths. The induced charge results in a measurable voltage. The voltage is measured and the voltage measurements used to determine a junction depth and charge concentration of a material using the correlation between penetration depth of light and wavelength of light.