Rapid analysis of buffer layer thickness for thin film solar cells

    公开(公告)号:US09689912B2

    公开(公告)日:2017-06-27

    申请号:US13708019

    申请日:2012-12-07

    CPC classification number: G01R31/2642 H02S50/00 H02S50/10

    Abstract: A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell.

    Method and apparatus for resistivity and transmittance optimization in TCO solar cell films
    2.
    发明授权
    Method and apparatus for resistivity and transmittance optimization in TCO solar cell films 有权
    TCO太阳能电池薄膜的电阻率和透射率优化方法和装置

    公开(公告)号:US09130113B2

    公开(公告)日:2015-09-08

    申请号:US13714823

    申请日:2012-12-14

    CPC classification number: H01L31/1884 Y02E10/50

    Abstract: A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination.

    Abstract translation: 一种方法和系统提供了在制造工具的一个室中沉积TCO,透明导电氧化物膜,然后在同一工具的另一个室中用光能照射TCO膜。 在一些实施例中,TCO膜用于太阳能电池并形成在太阳能电池基板上。 该方法包括对TCO膜照射一段时间和能量以降低TCO膜的电阻而不降低透射率。 在光照射室中使用一个或多个光源。 单独或组合使用红外范围,可见光范围和紫外线光范围内的光。

    Method of making photovoltaic device having high quantum efficiency
    4.
    发明授权
    Method of making photovoltaic device having high quantum efficiency 有权
    制造具有高量子效率的光电器件的方法

    公开(公告)号:US09583655B2

    公开(公告)日:2017-02-28

    申请号:US14048086

    申请日:2013-10-08

    Inventor: Tzu-Huan Cheng

    Abstract: A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.

    Abstract translation: 制造光伏器件的方法包括在衬底上形成包括吸收体材料的吸收层,在吸收层上方形成缓冲层,在缓冲层上形成前透明层,并将光电器件曝光于 温度在约80℃至约500℃的温度下进行一段时间,之后在吸收层上方形成缓冲层。

    Method and system for junction depth identification for ultra shallow junctions
    6.
    发明授权
    Method and system for junction depth identification for ultra shallow junctions 有权
    超浅结结合深度识别方法及系统

    公开(公告)号:US09103659B1

    公开(公告)日:2015-08-11

    申请号:US14191475

    申请日:2014-02-27

    Inventor: Tzu-Huan Cheng

    Abstract: Provided is a method for identifying material junctions and doping characteristics in semiconductor and other materials by illuminating the material and measuring voltage. A correlation between penetration depth of light and wavelength of light is established for a material. Photons are applied to materials such as semiconductor materials to induce charge. The photons are applied by exposing the material to light having a range of wavelengths. The induced charge results in a measurable voltage. The voltage is measured and the voltage measurements used to determine a junction depth and charge concentration of a material using the correlation between penetration depth of light and wavelength of light.

    Abstract translation: 提供了一种通过照射材料并测量电压来识别半导体和其他材料中的材料结和掺杂特性的方法。 确定材料的穿透深度和光的波长之间的相关性。 光子被应用于诸如半导体材料的材料以诱导电荷。 通过将材料暴露于具有一定波长范围的光来施加光子。 感应电荷导致可测量的电压。 使用光的穿透深度和光的波长之间的相关性来测量电压并且使用电压测量来确定材料的结深度和电荷浓度。

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