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公开(公告)号：US20140235001A1
公开(公告)日：2014-08-21
申请号：US14267964
申请日：2014-05-02
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
IPC: H01L33/60
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
Abstract translation: 描述了用于制造发光装置的系统和方法。 优选实施例包括形成在基板上的多个LED。 每个LED优选地具有沿LED的侧壁的间隔物，并且在LED之间的基板上形成反射表面。 反射表面优选地位于比各个LED的有源层更低的位置。
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公开(公告)号：US09214613B2
公开(公告)日：2015-12-15
申请号：US14267964
申请日：2014-05-02
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chia-Lin Yu , Chen-Hua Yu , Wen-Chih Chiou
CPC classification number: H01L33/62 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/42 , H01L33/60
Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
Abstract translation: 描述了用于制造发光装置的系统和方法。 优选实施例包括形成在基板上的多个LED。 每个LED优选地具有沿LED的侧壁的间隔物，并且在LED之间的基板上形成反射表面。 反射表面优选地位于比各个LED的有源层更低的位置。
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公开(公告)号：US09130115B2
公开(公告)日：2015-09-08
申请号：US14187438
申请日：2014-02-24
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。
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公开(公告)号：US20140166979A1
公开(公告)日：2014-06-19
申请号：US14187438
申请日：2014-02-24
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构，使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中，顶部接触层在多个凸起的半导体区域上是连续的，而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。
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公开(公告)号：US20130224892A1
公开(公告)日：2013-08-29
申请号：US13857678
申请日：2013-04-05
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC: H01L33/46
CPC classification number: H01L33/60 , H01L33/0079 , H01L33/10 , H01L33/46 , H01L2933/0083
Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.
Abstract translation: 提供了一种用于制造LED的系统和方法。 优选的实施例包括在衬底上形成分布式布拉格反射器的衬底。 在分布式布拉格反射器上形成光子晶体层，使入射到分布式布拉格反射器上的光准直，从而提高分布式布拉格反射器的效率。 优选地，在光子晶体层上形成第一接触层，有源层和第二接触层，或者替代地附着到光子晶体层。
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Patent Agency Ranking
公开(公告)号：US08609448B2
公开(公告)日：2013-12-17
申请号：US13857678
申请日：2013-04-05
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC: H01L33/46
CPC classification number: H01L33/60 , H01L33/0079 , H01L33/10 , H01L33/46 , H01L2933/0083
Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.
Abstract translation: 提供了一种用于制造LED的系统和方法。 优选的实施例包括在衬底上形成分布式布拉格反射器的衬底。 在分布式布拉格反射器上形成光子晶体层，使入射到分布式布拉格反射器上的光准直，从而提高分布式布拉格反射器的效率。 优选地，在光子晶体层上形成第一接触层，有源层和第二接触层，或者替代地附着到光子晶体层。
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公开(公告)号：US20150147834A1
公开(公告)日：2015-05-28
申请号：US14608306
申请日：2015-01-29
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Chen-Hua Yu , Hung-Pin Chang , Yung-Chi Lin , Chia-Lin Yu , Jui-Pin Hung , Chien Ling Hwang
CPC classification number: H01L21/76898 , H01L21/3065 , H01L21/486 , H01L21/6835 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L24/29 , H01L24/48 , H01L24/49 , H01L24/97 , H01L33/005 , H01L33/0054 , H01L33/486 , H01L33/62 , H01L33/641 , H01L33/644 , H01L33/647 , H01L2221/68345 , H01L2221/68359 , H01L2224/16 , H01L2224/32225 , H01L2224/32506 , H01L2224/48091 , H01L2224/48227 , H01L2224/48233 , H01L2224/49113 , H01L2224/73265 , H01L2224/97 , H01L2924/00012 , H01L2924/00014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/04941 , H01L2924/12041 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/3512 , H01L2933/0066 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns.
Abstract translation: 具有上述通孔硅衬底（或通孔）的基板消除了对导电凸块的需要。 流程非常简单，成本效益高。 所描述的结构将单独的TSV，再分配层和导电凸块结构组合成单个结构。 通过组合单独的结构，产生具有高散热能力的低电阻电连接。 此外，具有通过硅插头（或通孔或沟槽）的基板还允许将多个芯片封装在一起。 通过硅沟槽可围绕一个或多个芯片，以在制造期间提供防止铜扩散到相邻器件的保护。 此外，具有相似或不同功能的多个芯片可以集成在TSV基板上。 通过具有不同图案的硅插头可以在半导体芯片下使用以改善散热并解决制造问题。
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公开(公告)号：US20150053918A1
公开(公告)日：2015-02-26
申请号：US14472495
申请日：2014-08-29
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
CPC classification number: H01L33/145 , H01L33/0066 , H01L33/04 , H01L33/06 , H01L33/30 , H01L33/36 , H01L33/62 , H01L2933/0066
Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.
Abstract translation: 提供了一种发光二极管（LED）装置。 LED装置具有较低的LED层和位于其间的发光层的上部LED层。 在上LED层中形成电流阻挡层，使得在与上层LED层接触的电极之间的电流流过电流阻挡层。 当电流阻挡层位于电极和发光层之间时，由发光层发射的光不被电极阻挡，并且光效率增加。 可以通过将上部LED层的一部分转换成电阻区域来形成电流阻挡层。 在一个实施方案中，诸如镁，碳或硅的离子注入上层LED层以形成电流阻挡层。
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公开(公告)号：US20140363910A1
公开(公告)日：2014-12-11
申请号：US14466172
申请日：2014-08-22
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
IPC: H01L33/00
CPC classification number: H01L33/0062 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L2924/01078 , H01S5/1231 , H01S5/2275
Abstract: A method of fabricating an LED is provided. A doped layer is formed over a silicon substrate. A plurality of dielectric plugs is formed over the silicon substrate. A light-emitting diode (LED) structure is formed over the doped layer. The LED structure is formed between the dielectric plugs. The dielectric plugs are removed, thereby forming a plurality of openings that partially expose the doped layer. The doped layer is converted into a porous layer at least in part by performing an electro-chemical anodization process through the openings. A conductive substrate is formed over the LED structure. Thereafter, the silicon substrate is removed. The removing of the silicon substrate comprises cleaving the porous layer or chemically etching the porous layer.
Abstract translation: 提供一种制造LED的方法。 在硅衬底上形成掺杂层。 在硅衬底上形成多个电介质塞。 在掺杂层上形成发光二极管（LED）结构。 LED结构形成在电介质塞之间。 去除电介质塞，从而形成部分地暴露掺杂层的多个开口。 至少部分地通过进行通过开口的电化学阳极氧化处理将掺杂层转变成多孔层。 在LED结构上方形成导电基板。 之后，除去硅衬底。 去除硅衬底包括切割多孔层或化学蚀刻多孔层。
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公开(公告)号：US09117943B2
公开(公告)日：2015-08-25
申请号：US14466172
申请日：2014-08-22
Applicant: TSMC Solid State Lighting Ltd.
Inventor： Ding-Yuan Chen , Chen-Hua Yu , Wen-Chih Chiou
CPC classification number: H01L33/0062 , H01L21/78 , H01L33/0066 , H01L33/0079 , H01L2924/01078 , H01S5/1231 , H01S5/2275
Abstract: A method of forming a light-emitting diode (LED) device is provided. The method includes steps of providing a first substrate, forming an LED structure on the first substrate, forming a porous layer on the first substrate after forming the LED structure, forming a conductive substrate on the LED structure, and separating the LED structure from the first substrate along the porous layer. The substrate has a doped layer. The forming of the porous layer includes a step of converting the dopes layer to the porous layer.
Abstract translation: 提供一种形成发光二极管（LED）装置的方法。 该方法包括以下步骤：提供第一衬底，在第一衬底上形成LED结构，在形成LED结构之后在第一衬底上形成多孔层，在LED结构上形成导电衬底，以及将LED结构与第一衬底分离 衬底沿着多孔层。 衬底具有掺杂层。 多孔层的形成包括将掺杂层转化为多孔层的步骤。
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