公开(公告)号：US20150171266A1

公开(公告)日：2015-06-18

申请号：US14630714

申请日：2015-02-25

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Zhen-Yu Li ,  Chung-Pao Lin ,  Hsing-Kuo Hsia ,  Hao-Chung Kuo ,  Cindy Huichun Shu ,  Hsin-Chieh Huang

IPC: H01L33/00 ,  H01L29/66 ,  H01L21/02 ,  H01L33/12 ,  H01L21/268 ,  H01L21/306 ,  H01S5/343 ,  H01S5/02 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/02035 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/268 ,  H01L21/30604 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/12 ,  H01L33/20 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/34333

Abstract: The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).

Abstract translation: 本公开涉及一种装置。 该装置包括具有前侧与前侧相对的后侧的基板。 基板包括从基板的背面形成的多个开口。 这些开口从平面图中共同地在基板的背面上限定图案。 在一些实施例中，衬底是硅衬底或碳化硅衬底。 与开口垂直对准的硅衬底的部分具有约100微米至约300微米的垂直尺寸。 在硅衬底的正面上形成III-V族化合物层。 III-V族化合物层是发光二极管（LED），激光二极管（LD）和高电子迁移率晶体管（HEMT）之一的组分。

公开(公告)号：US09076950B2

公开(公告)日：2015-07-07

申请号：US13790092

申请日：2013-03-08

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Kuan-Chun Chen ,  Hao-Chung Kuo ,  You-Da Lin ,  Zhen-Yu Li

IPC: H01L33/64 ,  F21V21/00 ,  H01L25/075 ,  F21S6/00 ,  F21V3/04 ,  F21V7/22 ,  F21Y101/02 ,  F21Y105/00 ,  F21V29/74 ,  F21V29/89

CPC classification number: H01L25/0753 ,  F21S6/00 ,  F21V3/049 ,  F21V7/22 ,  F21V21/00 ,  F21V29/74 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/502 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lighting apparatus includes a polygon die including a plurality of light-emitting diodes (LEDs), and a submount to which each of the LEDs is coupled. Each LED includes a plurality of epi-layers which contains a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer, and a p-type electrode and an n-type electrode which are electrically coupled to the p-type layer and the n-type layer, respectively. The p-type and the n-type electrodes are located between the submount and the epi-layers. The submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series. At least some of the plurality of LEDs have non-rectangular top view shapes.

Abstract translation: 照明装置包括具有多个发光二极管（LED）的多边形管芯，以及与每个LED连接的基座。 每个LED包括多个外延层，其包含设置在p型层和n型层之间的p型层，n型层和多量子阱（MQW），以及p型 电极和n型电极，其分别电耦合到p型层和n型层。 p型和n型电极位于底座和外延层之间。 底座包含多个导电元件，其被配置为将多个LED的至少一部分串联耦合。 多个LED中的至少一些LED具有非矩形顶视图形状。

公开(公告)号：US20140078757A1

公开(公告)日：2014-03-20

申请号：US13790092

申请日：2013-03-08

Applicant: TSMC SOLID STATE LIGHTING LTD.

Inventor： Kuan-Chun Chen ,  Hao-Chung Kuo ,  You-Da Lin ,  Zhen-Yu Li

IPC: H01L33/64 ,  F21V21/00

CPC classification number: H01L25/0753 ,  F21S6/00 ,  F21V3/049 ,  F21V7/22 ,  F21V21/00 ,  F21V29/74 ,  F21V29/89 ,  F21Y2101/00 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L27/156 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/36 ,  H01L33/502 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L33/647 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure involves a lighting apparatus. The lighting apparatus includes a polygon die. The polygon die includes a plurality of light-emitting diodes (LEDs). Each LED includes a plurality of epi-layers, the epi-layers containing a p-type layer, an n-type layer, and a multiple quantum well (MQW) disposed between the p-type layer and the n-type layer. Each LED includes a p-type electrode and an n-type electrode electrically coupled to the p-type layer and the n-type layer, respectively. The polygon die also includes a submount to which each of the LEDs is coupled. The p-type and the n-type electrodes are located between the submount and the epi-layers. The submount contains a plurality of conductive elements configured to electrically couple at least a portion of the plurality of LEDs in series.

Abstract translation: 本公开涉及一种照明装置。 照明装置包括多边形模具。 多边形管芯包括多个发光二极管（LED）。 每个LED包括多个外延层，外延层包含设置在p型层和n型层之间的p型层，n型层和多量子阱（MQW）。 每个LED包括分别电耦合到p型层和n型层的p型电极和n型电极。 多边形管芯还包括每个LED耦合到的基座。 p型和n型电极位于底座和外延层之间。 底座包含多个导电元件，其被配置为将多个LED的至少一部分串联耦合。

公开(公告)号：US20150055671A1

公开(公告)日：2015-02-26

申请号：US14533219

申请日：2014-11-05

Applicant: TSMC Solid State Lighting Ltd.

Inventor： Zhen-Yu Li ,  Tzu-Te Yang ,  Hon-Way Lin ,  Chung-Pao Lin ,  Kuan-Chun Chen ,  Ching-Yu Chen ,  You-Da Lin ,  Hao-Chung Kuo

IPC: H01S5/20 ,  H01L33/06 ,  H01S5/343 ,  H01S5/30 ,  H01L33/14 ,  H01L33/30

CPC classification number: H01S5/2013 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/145 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34333

Abstract: The present disclosure involves a light-emitting device. The light-emitting device includes an n-doped gallium nitride (n-GaN) layer located over a substrate. A multiple quantum well (MQW) layer is located over the n-GaN layer. An electron-blocking layer is located over the MQW layer. A p-doped gallium nitride (p-GaN) layer is located over the electron-blocking layer. The light-emitting device includes a hole injection layer. In some embodiments, the hole injection layer includes a p-doped indium gallium nitride (p-InGaN) layer that is located in one of the three following locations: between the MQW layer and the electron-blocking layer; between the electron-blocking layer and the p-GaN layer; and inside the p-GaN layer.

Abstract translation: 本发明涉及一种发光装置。 发光器件包括位于衬底上方的n掺杂氮化镓（n-GaN）层。 多量子阱（MQW）层位于n-GaN层上。 电子阻挡层位于MQW层上。 p型掺杂氮化镓（p-GaN）层位于电子阻挡层上方。 发光装置包括空穴注入层。 在一些实施例中，空穴注入层包括位于以下三个位置之一的p掺杂的氮化铟镓（p-InGaN）层：在MQW层和电子阻挡层之间; 在电子阻挡层和p-GaN层之间; 并在p-GaN层内部。