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公开(公告)号:US09130115B2
公开(公告)日:2015-09-08
申请号:US14187438
申请日:2014-02-24
Applicant: TSMC Solid State Lighting Ltd.
Inventor: Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
Abstract translation: 提供了一种发光二极管(LED)装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构,使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中,顶部接触层在多个凸起的半导体区域上是连续的,而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。
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公开(公告)号:US20140166979A1
公开(公告)日:2014-06-19
申请号:US14187438
申请日:2014-02-24
Applicant: TSMC Solid State Lighting Ltd.
Inventor: Chen-Hua Yu , Wen-Chih Chiou , Ding-Yuan Chen , Chia-Lin Yu , Hung-Ta Lin
CPC classification number: H01L33/22 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
Abstract translation: 提供了一种发光二极管(LED)装置。 LED装置已经凸起形成在基板上的半导体区域。 在凸起的半导体区域上形成LED结构,使得LED器件的底部接触层和有源层是保形层。 顶部接触层具有平坦的表面。 在一个实施例中,顶部接触层在多个凸起的半导体区域上是连续的,而底部接触层和有源层在相邻凸起的半导体区域之间是不连续的。
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