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    STRUCTURE TO REDUCE BACKSIDE SILICON DAMAGE
    3.
    发明申请
    STRUCTURE TO REDUCE BACKSIDE SILICON DAMAGE 有权
    结构减少背面的硅损坏

    公开(公告)号：US20160318757A1

    公开(公告)日：2016-11-03

    申请号：US14699094

    申请日：2015-04-29

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chung-Yen Chou ,  Chih-Jen Chan ,  Chia-Shiung Tsai ,  Ru-Liang Lee ,  Yuan-Chih Hsieh

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00595 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0292 ,  B81B2203/0109 ,  B81C1/00357 ,  B81C1/00801 ,  B81C2201/0132

    Abstract: A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.

    Abstract translation: 提供一种形成IC（集成电路）装置的方法。 该方法包括接收包括第一基板的第一晶片，并且包括设置在其上表面上的等离子体反射层。 等离子体反射层被配置为从其反射等离子体。 介电保护层形成在第二晶片的下表面上，其中第二晶片包括第二基板。 第二晶片被接合到第一晶片，使得在等离子体反射层和介电保护层之间形成空腔。 用等离子体进行蚀刻工艺以形成从第二晶片的上表面延伸并通过介电保护层进入空腔的开口。 还提供了上述方法的结果。

    MEMS structure having rounded edge stopper and method of fabricating the same
    6.
    发明授权
    MEMS structure having rounded edge stopper and method of fabricating the same 有权
    具有圆形边缘止动器的MEMS结构及其制造方法

    公开(公告)号：US09517927B2

    公开(公告)日：2016-12-13

    申请号：US14700138

    申请日：2015-04-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Chih-Jen Chan ,  Chang-Ming Wu

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/001

    Abstract: A method of fabricating MEMS device includes forming a plurality of rounded edge trenches on a sacrificial layer over a carrier substrate. Then, formation of a polycrystalline silicon layer over the sacrificial layer to fill the trenches. A plurality of stoppers is defined by the trenches and protrudes from the polycrystalline silicon layer toward the carrier substrate Subsequently, a portion of the sacrificial layer is removed to define a recess between the polycrystalline silicon layer and a carrier substrate and expose the stoppers.

    Abstract translation: 制造MEMS器件的方法包括在载体衬底上的牺牲层上形成多个圆形边缘沟槽。 然后，在牺牲层上形成多晶硅层以填充沟槽。 多个塞子由沟槽限定并从多晶硅层朝向载体基板突出。接下来，去除牺牲层的一部分以在多晶硅层和载体基板之间限定凹陷并露出止动件。

    Noble gas bombardment to reduce scallops in bosch etching
    7.
    发明授权
    Noble gas bombardment to reduce scallops in bosch etching 有权
    贵族气体轰炸以减少波纹蚀刻中的扇贝

    公开(公告)号：US09224615B2

    公开(公告)日：2015-12-29

    申请号：US14023563

    申请日：2013-09-11

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Che-Ming Chang ,  Lee-Chuan Tseng ,  Shih-Wei Lin ,  Chih-Jen Chan ,  Yuan-Chih Hsieh ,  Ming Chyi Liu ,  Chung-Yen Chou

    IPC: H01L21/265 ,  H01L21/3065 ,  H01L27/00 ,  H01L21/263

    CPC classification number: H01L21/30655 ,  H01L21/2633 ,  H01L21/3065 ,  H01L27/00

    Abstract: A method of etching a trench in a substrate is provided. The method repeatedly alternates between using a fluorine-based plasma to etch a trench, which has trench sidewalls, into a selected region of the substrate; and using a fluorocarbon plasma to deposit a liner on the trench sidewalls. The liner, when formed and subsequently etched, has an exposed sidewall surface that includes scalloped recesses. The trench, which includes the scalloped recesses, is then bombarded with a molecular beam where the molecules are directed on an axis parallel to the trench sidewalls to reduce the scalloped recesses.

    Abstract translation: 提供了蚀刻衬底中的沟槽的方法。 该方法在使用氟基等离子体之间重复地交替，以将具有沟槽侧壁的沟槽蚀刻到衬底的选定区域中; 以及使用氟碳等离子体将衬垫沉积在沟槽侧壁上。 衬里当形成并随后被蚀刻时具有包括扇形凹槽的暴露的侧壁表面。 包括扇形凹槽的沟槽然后用分子束轰击，其中分子被引导在平行于沟槽侧壁的轴上以减少扇形凹部。

    Robot blade design
    8.
    发明授权
    Robot blade design 有权
    机器人叶片设计

    公开(公告)号：US09434076B2

    公开(公告)日：2016-09-06

    申请号：US13959851

    申请日：2013-08-06

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lee-Chuan Tseng ,  Chih-Jen Chan ,  Shih-Wei Lin ,  Che-Ming Chang ,  Chung-Yen Chou ,  Yuan-Chih Hsieh

    IPC: B25J11/00 ,  B25J15/00 ,  H01L21/677 ,  H01L21/687

    CPC classification number: B25J11/0095 ,  B25J15/0014 ,  H01L21/67766 ,  H01L21/68707

    Abstract: The present disclosure relates to a wafer transfer robot having a robot blade that can be used to handle substrates that are patterned on both sides without causing warpage of the substrates. In some embodiments, the wafer transfer robot has a robot blade coupled to a transfer arm that varies a position of the robot blade. The robot blade has a wafer reception area that receives a substrate. Two or more spatially distinct contact points are located at positions along a perimeter of the wafer reception area that provide support to opposing edges of the substrate. The two or more contact points are separated by a cavity in the robot blade. The cavity mitigates contact between a backside of the substrate and the robot blade, while providing support to opposing sides of the substrate to prevent warpage of the substrate.

    Abstract translation: 本公开涉及具有机器人刀片的晶片传送机器人，其可以用于处理在两侧上被图案化的基板，而不会引起基板的翘曲。 在一些实施例中，晶片传送机器人具有联接到改变机器人刀片的位置的传送臂的机器人刀片。 机器人刀片具有接收衬底的晶片接收区域。 两个或更多个空间上不同的接触点位于沿着晶片接收区域的周边的位置，该位置为衬底的相对边缘提供支撑。 两个或多个接触点由机器人刀片中的空腔分开。 该腔减轻了衬底的背面与机器人刀片之间的接触，同时为衬底的相对侧提供支撑以防止衬底翘曲。

    METHOD OF IMPROVING GETTER EFFICIENCY BY INCREASING SUPERFICIAL AREA
    9.
    发明申请
    METHOD OF IMPROVING GETTER EFFICIENCY BY INCREASING SUPERFICIAL AREA 有权
    通过增加超级区域提高效率的方法

    公开(公告)号：US20160101976A1

    公开(公告)日：2016-04-14

    申请号：US14967663

    申请日：2015-12-14

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yuan-Chih Hsieh ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

    IPC: B81B7/00

    CPC classification number: B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In some embodiments, the present disclosure relates to a MEMs (micro-electromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.

    Abstract translation: 在一些实施例中，本公开涉及具有吸气剂层的MEM（微机电系统）包装装置。 MEM包装包括具有位于第一衬底的上表面内的空腔的第一衬底。 腔内表面粗糙。 吸气剂层布置在空腔的粗糙化的内表面上。 在空腔的相对侧的第一基板的上表面上配置有接合层，通过接合层与第一基板接合的第二基板。 第二基板布置在空腔上方。 空腔的粗糙化的内表面能够更有效地吸收残留气体，从而提高吸气过程的效率。

    Method of improving getter efficiency by increasing superficial area
    10.
    发明授权
    Method of improving getter efficiency by increasing superficial area 有权
    通过增加表面积来提高吸气效率的方法

    公开(公告)号：US09242853B2

    公开(公告)日：2016-01-26

    申请号：US14053751

    申请日：2013-10-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yuan-Chih Hsieh ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

    IPC: H01L23/31 ,  B81C1/00 ,  H01L23/26 ,  H01L21/322 ,  B81B7/00

    CPC classification number: B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

    Abstract translation: 本公开涉及一种吸气方法，其通过在粗糙化的基底表面上沉积吸气材料和相关联的装置来提供高效吸气过程。 在一些实施例中，通过将衬底提供到具有残留气体的处理室中来执行该方法。 在衬底的顶部表面上的结合区域之间的位置处形成一个或多个空腔。 相应的空腔具有在多个方向上变化的内表面的粗糙化。 吸气剂层沉积到一个或多个空腔中。 一个或多个空腔的粗糙化的内表面使得基底能够更有效地吸收残余气体，从而提高吸气过程的效率。

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