公开(公告)号：US12292684B2

公开(公告)日：2025-05-06

申请号：US17247301

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Tzu-Yang Lin ,  Ya-Ching Chang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  H01L21/02 ,  H01L21/027 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

公开(公告)号：US12222650B2

公开(公告)日：2025-02-11

申请号：US17150309

申请日：2021-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/09 ,  C08L101/02 ,  G03F7/004 ,  G03F7/039 ,  G03F7/26

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.

公开(公告)号：US12210286B2

公开(公告)日：2025-01-28

申请号：US18336399

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/26 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

公开(公告)号：US12189296B2

公开(公告)日：2025-01-07

申请号：US17461199

申请日：2021-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chien-Wei Wang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC: G03F7/32 ,  G03F7/11 ,  H01L21/02 ,  H01L21/027 ,  G03F7/30

Abstract: Resist rinse solutions and corresponding lithography techniques are disclosed herein. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.

公开(公告)号：US20240363452A1

公开(公告)日：2024-10-31

申请号：US18767153

申请日：2024-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Hau Shiu ,  Ching-Yu Chang ,  Jei Ming Chen ,  Jr-Yu Chen ,  Tze-Liang Lee

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L22/12 ,  H01L21/02186 ,  H01L21/0228

Abstract: In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.

公开(公告)号：US11948798B2

公开(公告)日：2024-04-02

申请号：US17377813

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chang ,  Jung-Hau Shiu ,  Jen Hung Wang ,  Tze-Liang Lee

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/0331 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/32133 ,  H01L21/32139

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

公开(公告)号：US11934101B2

公开(公告)日：2024-03-19

申请号：US17094706

申请日：2020-11-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027

CPC classification number: G03F7/30 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/0044 ,  G03F7/0045 ,  G03F7/40 ,  H01L21/0274

Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ═O, —S—, —P—, —PO2, —C(═O)SH, —C(═O)OH, —C(═O)O—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

公开(公告)号：US20240045327A1

公开(公告)日：2024-02-08

申请号：US18446702

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/004 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/325 ,  G03F7/0047 ,  G03F7/32 ,  G03F7/30

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US20230375924A1

公开(公告)日：2023-11-23

申请号：US18365302

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

CPC classification number: G03F7/0048 ,  G03F7/0042 ,  G03F7/0047 ,  G03F7/0045

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US20230324806A1

公开(公告)日：2023-10-12

申请号：US18336399

申请日：2023-06-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/26 ,  H01L21/027 ,  G03F7/30 ,  G03F7/38 ,  H01L21/02 ,  G03F7/16 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/26 ,  H01L21/0274 ,  G03F7/3057 ,  G03F7/38 ,  G03F7/40 ,  G03F7/168 ,  G03F7/162 ,  G03F7/0043 ,  H01L21/0209 ,  H01L21/0206

Abstract: A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.