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公开(公告)号：US11673161B2
公开(公告)日：2023-06-13
申请号：US16814775
申请日：2020-03-10
Applicant: Technetics Group LLC
Inventor： Angus McFadden , Jason Wright
Abstract: A method of depositing material to manufacture an electrostatic chuck is provided. The method first deposits at least one layer of a first dielectric material on a handle using spin coating and/or direct spraying method. A functional electric layer is next deposited on the at least one layer of the first dielectric material. Finally, the electrostatic chuck if formed by depositing at least one layer of a second dielectric material on the functional electric layer and the first dielectric material using spin coating and/or direct spraying method.
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公开(公告)号：US11718905B2
公开(公告)日：2023-08-08
申请号：US16624233
申请日：2018-05-30
Applicant: TECHNETICS GROUP LLC
Inventor： Nader Kalkhoran , Eric Tobin , Tim Egge , Jason Burns , Rick Oliver , Angus McFadden , Jason Wright
CPC classification number: C23C14/081 , C23C14/0694 , C23C14/083 , C23C14/221 , C23C14/24 , C23C28/042 , C23C28/42 , H01J37/32477 , H01J37/32715
Abstract: Techniques for depositing a functionally integrated coating structure on a substrate are provided. An example method according to the disclosure includes receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system, disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3), disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is Yttrium Oxide (Y2O3), and disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Yttrium Fluoride (YF3).
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3.发明申请公开(公告)号：US20190185989A1
公开(公告)日：2019-06-20
申请号：US16222894
申请日：2018-12-17
Applicant: Technetics Group LLC
Inventor： Angus McFadden , Jason Wright
CPC classification number: C23C14/541 , C23C14/083 , C23C14/221 , C23C14/505
Abstract: Several embodiments of the present technology are directed to actively controlling a temperature of a substrate in a chamber during manufacturing of a material or thin film. In some embodiments, the method can include cooling or heating the substrate to have a temperature within a target range, depositing a material over a surface of the substrate, and controlling the temperature of the substrate while the material is being deposited. In some embodiments, controlling the temperature of the substrate can include removing thermal energy from the substrate by directing a fluid over the substrate to maintain the temperature of the substrate within a target range throughout the deposition process.
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公开(公告)号：US20190088613A1
公开(公告)日：2019-03-21
申请号：US16125161
申请日：2018-09-07
Applicant: Technetics Group LLC
Inventor： Jason Wright , Angus McFadden
Abstract: Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.
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Patent Agency Ranking
公开(公告)号：US20220259721A1
公开(公告)日：2022-08-18
申请号：US17722137
申请日：2022-04-15
Applicant: Technetics Group LLC
Inventor： Angus McFadden , Jason Wright
Abstract: Several embodiments of the present technology are directed to actively controlling a temperature of a substrate in a chamber during manufacturing of a material or thin film. In some embodiments, the method can include cooling or heating the substrate to have a temperature within a target range, depositing a material over a surface of the substrate, and controlling the temperature of the substrate while the material is being deposited. In some embodiments, controlling the temperature of the substrate can include removing thermal energy from the substrate by directing a fluid over the substrate to maintain the temperature of the substrate within a target range throughout the deposition process.
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公开(公告)号：US11332821B2
公开(公告)日：2022-05-17
申请号：US16222894
申请日：2018-12-17
Applicant: Technetics Group LLC
Inventor： Angus McFadden , Jason Wright
Abstract: Several embodiments of the present technology are directed to actively controlling a temperature of a substrate in a chamber during manufacturing of a material or thin film. In some embodiments, the method can include cooling or heating the substrate to have a temperature within a target range, depositing a material over a surface of the substrate, and controlling the temperature of the substrate while the material is being deposited. In some embodiments, controlling the temperature of the substrate can include removing thermal energy from the substrate by directing a fluid over the substrate to maintain the temperature of the substrate within a target range throughout the deposition process.
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公开(公告)号：US20200290081A1
公开(公告)日：2020-09-17
申请号：US16814775
申请日：2020-03-10
Applicant: Technetics Group LLC
Inventor： Angus McFadden , Jason Wright
Abstract: A method of depositing material to manufacture an electrostatic chuck is provided. The method first deposits at least one layer of a first dielectric material on a handle using spin coating and/or direct spraying method. A functional electric layer is next deposited on the at least one layer of the first dielectric material. Finally, the electrostatic chuck if formed by depositing at least one layer of a second dielectric material on the functional electric layer and the first dielectric material using spin coating and/or direct spraying method.
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公开(公告)号：US10727195B2
公开(公告)日：2020-07-28
申请号：US16125161
申请日：2018-09-07
Applicant: Technetics Group LLC
Inventor： Jason Wright , Angus McFadden
Abstract: Several embodiments of the present technology are directed to bonding sheets having enhanced plasma resistant characteristics, and being used to bond to semiconductor devices. In some embodiments, a bonding sheet in accordance with the present technology comprises a base bond material having one or more thermal conductivity elements embedded therein, and one or more etched openings formed around particular regions or corresponding features of the adjacent semiconductor components. The bond material can include PDMS, FFKM, or a silicon-based polymer, and the etch resistant components can include PEEK, or PEEK-coated components.
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公开(公告)号：US10596503B1
公开(公告)日：2020-03-24
申请号：US15845105
申请日：2017-12-18
Applicant: Technetics Group LLC
Inventor： Mark Whitlow , Angus McFadden , Kamal Frikach , Elaine Motyka , Jason Wright
Abstract: The technology of the present application provides an apparatus for sealing and filtering. The apparatus includes a sealing component and a filtering component. The sealing component has an annular structure and a first connecting component. The annular structure includes a sidewall defining a recess. The first connecting component extends from the annular structure in a first direction. The filtering component has a filtering material and a second connecting component. The filtering material has a flat structure. The filter material is configured to filter fluid passing therein in a second direction. The sealing component and the filtering component are coupled by the first connecting component and the second connecting component.
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