公开(公告)号：US20220404647A1

公开(公告)日：2022-12-22

申请号：US17896303

申请日：2022-08-26

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Changzhi Li ,  Jing Li ,  Jingyu Lin

IPC: G02F1/017 ,  H01S3/00 ,  H01L27/15 ,  G02F1/29

Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

公开(公告)号：US11460723B1

公开(公告)日：2022-10-04

申请号：US16703496

申请日：2019-12-04

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Changzhi Li ,  Jing Li ,  Jingyu Lin

IPC: G02F1/017 ,  G02F1/29 ,  H01L27/15 ,  H01S3/00

Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

公开(公告)号：US20210111299A1

公开(公告)日：2021-04-15

申请号：US16897742

申请日：2020-06-10

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0304

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

公开(公告)号：US10714651B2

公开(公告)日：2020-07-14

申请号：US16170500

申请日：2018-10-25

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L21/02 ,  H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0304

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

公开(公告)号：US20200135958A1

公开(公告)日：2020-04-30

申请号：US16170500

申请日：2018-10-25

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/02 ,  H01L31/18 ,  H01L31/036

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.

公开(公告)号：US11747658B2

公开(公告)日：2023-09-05

申请号：US17896303

申请日：2022-08-26

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Changzhi Li ,  Jing Li ,  Jingyu Lin

IPC: G02F1/017 ,  H01S3/00 ,  H01L27/15 ,  G02F1/29

CPC classification number: G02F1/017 ,  G02F1/292 ,  H01L27/156 ,  H01S3/0085 ,  G02F2202/10 ,  G02F2202/36 ,  G02F2203/50

Abstract: Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from In-rich In1-xGaxN/GaN multiple quantum wells (MQWs). In-rich InxGa1-xN alloys possess the unique properties of exceptionally high free-carrier-induced refractive index (n) change and low optical loss. InGaN/GaN MQW pixels play the role of using a very small fraction of a laser beam to modulate the phase of the laser beam. The phase of each MQW pixel in the OPA is controlled independently via electro-optic effect through the integration between OPA pixels with a Laterally Diffused MOSFET (LDMOS) integrated circuit driver to achieve the manipulation of the distribution of optical power in the far field. The present invention is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

公开(公告)号：US20230223741A1

公开(公告)日：2023-07-13

申请号：US17439321

申请日：2020-03-12

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Zhenyu Sun ,  Yaqiong Yan ,  Jing Li ,  Jingyu Lin

IPC: H01S5/22 ,  H01S5/026 ,  H01S3/063

CPC classification number: H01S5/2214 ,  H01S5/0265 ,  H01S3/0632

Abstract: Core-cladding planar waveguide (PWG) structures and methods of making and using same. The core-cladding PWG structures can be synthesized by hydride vapor phase epitaxy and processed by mechanical and chemical-mechanical polishing. An Er doping concentration of [Er] between 1×1018 atoms/cm3 and 1×1022 atoms/cm3 can be in the core layer. Such PWGs have a core region that can achieve optical confinement between 96% and 99% and above.

公开(公告)号：US11195968B2

公开(公告)日：2021-12-07

申请号：US16897742

申请日：2020-06-10

Applicant: Texas Tech University System

Inventor： Hongxing Jiang ,  Jingyu Lin ,  Jing Li ,  Avisek Maity ,  Sam Grenadier

IPC: H01L31/115 ,  G01T3/08 ,  H01L31/0224 ,  H01L31/036 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0304

Abstract: A method for fabricating a neutron detector includes providing an epilayer wafer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) having a thickness (t), dicing or cutting the epilayer wafer into one or more BN strips having a width (W) and a length (L), and depositing a first metal contact on a first surface of at least one of the BN strip and a second metal contact on a second surface of the at least one BN strip. The neutron detector includes an electrically insulating submount, a BN epilayer of Boron-10 enriched hexagonal boron nitride (h-10BN or h-BN or 10BN or BN) placed on the insulating submount, a first metal contact deposited on a first surface of the BN epilayer, and a second metal contact deposited on a second surface of the BN epilayer.