公开(公告)号：US12226796B2

公开(公告)日：2025-02-18

申请号：US18351245

申请日：2023-07-12

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Ihsan Simms ,  Joel Estrella ,  Antonio Luis Pacheco Rotondaro ,  Joshua Hooge ,  Hiroshi Marumoto

IPC: B05C3/04 ,  B05C11/10 ,  B05D1/18 ,  B08B3/10 ,  H01L21/02 ,  H01L21/311

Abstract: A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

公开(公告)号：US20220388022A1

公开(公告)日：2022-12-08

申请号：US17341105

申请日：2021-06-07

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Ihsan Simms ,  Joel Estrella ,  Antonio Luis Pacheco Rotondaro ,  Joshua Hooge ,  Hiroshi Marumoto

IPC: B05C3/04 ,  B05C11/10 ,  H01L21/02 ,  H01L21/311 ,  B08B3/10

Abstract: A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

公开(公告)号：US11738363B2

公开(公告)日：2023-08-29

申请号：US17341105

申请日：2021-06-07

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Ihsan Simms ,  Joel Estrella ,  Antonio Luis Pacheco Rotondaro ,  Joshua Hooge ,  Hiroshi Marumoto

IPC: B05C11/10 ,  H01L21/311 ,  H01L21/02 ,  B05D1/18 ,  B05C3/04 ,  B08B3/10

CPC classification number: B05C3/04 ,  B05C11/1002 ,  B08B3/106 ,  H01L21/0206 ,  H01L21/31111 ,  B05D1/18

Abstract: A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

公开(公告)号：US11538684B2

公开(公告)日：2022-12-27

申请号：US16671564

申请日：2019-11-01

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Ian J. Brown ,  Ihsan Simms ,  Ainhoa Negreira ,  Kathleen Nafus

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  B81C1/00 ,  G03F7/00 ,  G03F7/42 ,  G03F7/40

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

公开(公告)号：US10886290B2

公开(公告)日：2021-01-05

申请号：US16517097

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Derek Bassett ,  Antonio Rotondaro ,  Ihsan Simms ,  Trace Hurd

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11524

Abstract: A method of etching a substrate includes providing an etching solution in a tank of an etch processing system, where the etch processing system is configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank. The substrate contains micro-fabricated structures that have alternating layers of a first material and a second material, and the etching solution including an acid that etches the first material and results in an etch product to be moved from the substrate. The method further includes monitoring a concentration of the etch product within the etching solution, and maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution.

公开(公告)号：US20230356255A1

公开(公告)日：2023-11-09

申请号：US18351245

申请日：2023-07-12

Applicant: Tokyo Electron Limited

Inventor： Michael Carcasi ,  Ihsan Simms ,  Joel Estrella ,  Antonio Luis Pacheco Rotondaro ,  Joshua Hooge ,  Hiroshi Marumoto

IPC: B05C3/04 ,  B05C11/10 ,  H01L21/311 ,  B08B3/10 ,  H01L21/02

CPC classification number: B05C3/04 ,  B05C11/1002 ,  H01L21/31111 ,  B08B3/106 ,  H01L21/0206 ,  B05D1/18

Abstract: A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

公开(公告)号：US20220405902A1

公开(公告)日：2022-12-22

申请号：US17349538

申请日：2021-06-16

Applicant: Tokyo Electron Limited

Inventor： Joel Estrella ,  Ihsan Simms ,  Michael Carcasi ,  Joshua Hooge ,  Hiroshi Marumoto

IPC: G06T7/00 ,  G06K9/20 ,  G06K9/46 ,  G06T7/11 ,  G10L25/51 ,  G06T7/50 ,  G06K9/00 ,  H01L21/67 ,  B08B3/08 ,  B08B3/10 ,  B08B13/00

Abstract: An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

公开(公告)号：US11376640B2

公开(公告)日：2022-07-05

申请号：US16573744

申请日：2019-09-17

Applicant: Tokyo Electron Limited

Inventor： Antonio Luis Pacheco Rotondaro ,  Derek Bassett ,  Trace Quentin Hurd ,  Ihsan Simms

IPC: B08B6/00 ,  H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: In one exemplary embodiment, described herein are innovative techniques for reducing the attractive force between particles and a substrate surface to aid in the removal of particles from the substrate surface. More specifically, a multi-electrode chuck is utilized to assist in cleaning a substrate. The multi-electrode chuck is utilized to reduce the attractive forces between particles and the substrate and to move the loosened particles that are present on the substrate surface. The electrodes of the chuck are biased with alternating current (AC) voltages with a phase shift between the electrode bias waves. The resulting electric field wave on the substrate surface loosens the particles by polarizing the particles and moves the loosened particles across the substrate.

公开(公告)号：US20200066509A1

公开(公告)日：2020-02-27

申请号：US16671564

申请日：2019-11-01

Applicant: Tokyo Electron Limited

Inventor： Mark H. Somervell ,  Ian J. Brown ,  Ihsan Simms ,  Ainhoa Negreira ,  Kathleen Nafus

IPC: H01L21/027 ,  G03F7/42 ,  G03F7/40 ,  G03F7/09 ,  G03F7/00 ,  B81C1/00 ,  H01L21/311

Abstract: A processing method is disclosed that enables an improved directed self-assembly (DSA) processing scheme by allowing the formation of improved guide strips in the DSA template that may enable the formation of sub-30 nm features on a substrate. The improved guide strips may be formed by improving the selectivity of wet chemical processing between different organic layers or films. In one embodiment, treating the organic layers with one or more wavelengths of ultraviolet light may improve selectivity. The first wavelength of UV light may be less than 200 nm and the second wavelength of UV light may be greater than 200 mn.

公开(公告)号：US20200027891A1

公开(公告)日：2020-01-23

申请号：US16517097

申请日：2019-07-19

Applicant: Tokyo Electron Limited

Inventor： Derek Bassett ,  Antonio Rotondaro ,  Ihsan Simms ,  Trace Hurd

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: A method of etching a substrate includes providing an etching solution in a tank of an etch processing system, where the etch processing system is configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank. The substrate contains micro-fabricated structures that have alternating layers of a first material and a second material, and the etching solution including an acid that etches the first material and results in an etch product to be moved from the substrate. The method further includes monitoring a concentration of the etch product within the etching solution, and maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution.