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    Method and hardware for enhanced removal of post etch polymer and hardmask removal
    1.
    发明授权
    Method and hardware for enhanced removal of post etch polymer and hardmask removal 有权

    公开(公告)号：US10347503B2

    公开(公告)日：2019-07-09

    申请号：US14537702

    申请日：2014-11-10

    Applicant: Tokyo Electron Limited

    Inventor： Ian J. Brown ,  Junjun Liu

    IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/67

    Abstract: Methods for cleaning substrates are described including cleaning substrates having hardmask masks and polymer films, such part of semiconductor fabrication. Cleaning methods include ultraviolet (UV) light exposure of process gas mixtures and liquid cleaning chemistries. A substrate and/or process fluids are exposed to ultraviolet radiation. A process gas mixture being irradiated can include an oxidizing gas mixture (air, clean dry air, oxygen, peroxygen, etc.). Reducing gas mixtures, having hydrogen, can also be irradiated. Reactive species from irradiated gas mixtures are exposed to the substrate to chemically modify film properties, such as by facilitating a subsequent liquid cleaning step. Liquid cleaning chemistries on a substrate surface can also be irradiated. Such cleaning techniques enable shorter cleaning times, lower processing temperatures, and reduced damage to underlying or intermediate layers such as dielectric layers.

    Method for removing back-filled pore-filling agent from a cured porous dielectric
    4.
    发明授权
    Method for removing back-filled pore-filling agent from a cured porous dielectric 有权

    公开(公告)号：US10147640B2

    公开(公告)日：2018-12-04

    申请号：US14580518

    申请日：2014-12-23

    Applicant: Tokyo Electron Limited

    Inventor： Junjun Liu

    IPC: H01L21/44 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02

    Abstract: A method for preparing a porous dielectric is described. In particular, the method includes removing pore-filling agent from pores in a cured porous dielectric layer, wherein the pore-filling agent was back-filled within the pores following the removal of a pore-forming agent during a curing process. The removal of the pore-filling agent includes heating a substrate holder upon which the substrate rests to a holder temperature greater than 100 degrees C. and less than 400 degrees C., and while heating the substrate holder, exposing the substrate to electromagnetic (EM) radiation, wherein the EM radiation includes emission at a wavelengths within the ultraviolet (UV) spectrum, visible spectrum, infrared (IR) spectrum, or microwave spectrum, or combination thereof.

    METHOD FOR REMOVING BACK-FILLED PORE-FILLING AGENT FROM A CURED POROUS DIELECTRIC
    7.
    发明申请
    METHOD FOR REMOVING BACK-FILLED PORE-FILLING AGENT FROM A CURED POROUS DIELECTRIC 审中-公开
    从固化多孔介质中去除填充填充剂的方法

    公开(公告)号：US20150262865A1

    公开(公告)日：2015-09-17

    申请号：US14580518

    申请日：2014-12-23

    Applicant: Tokyo Electron Limited

    Inventor： Junjun Liu

    IPC: H01L21/768

    CPC classification number: H01L21/76825 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76826 ,  H01L2221/1047

    Abstract: A method for preparing a porous dielectric is described. In particular, the method includes removing pore-filling agent from pores in a cured porous dielectric layer, wherein the pore-filling agent was back-filled within the pores following the removal of a pore-forming agent during a curing process. The removal of the pore-filling agent includes heating a substrate holder upon which the substrate rests to a holder temperature greater than 100 degrees C. and less than 400 degrees C., and while heating the substrate holder, exposing the substrate to electromagnetic (EM) radiation, wherein the EM radiation includes emission at a wavelengths within the ultraviolet (UV) spectrum, visible spectrum, infrared (IR) spectrum, or microwave spectrum, or combination thereof.

    Abstract translation: 描述了一种制备多孔电介质的方法。 特别地，该方法包括从固化的多孔介电层中的孔中除去孔填充剂，其中在固化过程中除去成孔剂之后，孔隙填充剂被填充到孔内。 去除孔填充剂包括加热衬底保持器，衬底保持在保持器温度大于100℃且小于400℃的同时，并且在加热衬底保持器时，将衬底暴露于电磁（EM ）辐射，其中EM辐射包括在紫外（UV）光谱，可见光谱，红外（IR）光谱或微波光谱内的波长处的发射或其组合。

    Method and Hardware for Enhanced Removal of Post Etch Polymer and Hardmask Removal
    8.
    发明申请
    Method and Hardware for Enhanced Removal of Post Etch Polymer and Hardmask Removal 审中-公开
    用于增强去除后蚀刻聚合物和硬掩模去除的方法和硬件

    公开(公告)号：US20150128991A1

    公开(公告)日：2015-05-14

    申请号：US14537702

    申请日：2014-11-10

    Applicant: Tokyo Electron Limited

    Inventor： Ian J. Brown ,  Junjun Liu

    IPC: H01L21/311

    CPC classification number: H01L21/31133 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/67115

    Abstract: Methods for cleaning substrates are described including cleaning substrates having hardmask masks and polymer films, such part of semiconductor fabrication. Cleaning methods include ultraviolet (UV) light exposure of process gas mixtures and liquid cleaning chemistries. A substrate and/or process fluids are exposed to ultraviolet radiation. A process gas mixture being irradiated can include an oxidizing gas mixture (air, clean dry air, oxygen, peroxygen, etc.). Reducing gas mixtures, having hydrogen, can also be irradiated. Reactive species from irradiated gas mixtures are exposed to the substrate to chemically modify film properties, such as by facilitating a subsequent liquid cleaning step. Liquid cleaning chemistries on a substrate surface can also be irradiated. Such cleaning techniques enable shorter cleaning times, lower processing temperatures, and reduced damage to underlying or intermediate layers such as dielectric layers.

    Abstract translation: 描述了用于清洁基板的方法，其包括具有硬掩模掩模和聚合物膜的清洁基板，这些部分半导体制造。 清洁方法包括工艺气体混合物和液体清洁化学品的紫外线（UV）曝光。 将基底和/或工艺流体暴露于紫外线辐射。 被照射的处理气体混合物可以包括氧化气体混合物（空气，干净的干燥空气，氧气，过氧化物等）。 还可以照射具有氢气的还原气体混合物。 来自辐射气体混合物的活性物质暴露于基底以化学改性膜性质，例如通过促进随后的液体清洗步骤。 也可以对基材表面上的液体清洗化学物质进行照射。 这样的清洁技术使得更短的清洁时间，更低的加工温度以及对诸如电介质层之类的下层或中间层的损害降低。

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