公开(公告)号：US10043675B2

公开(公告)日：2018-08-07

申请号：US15629760

申请日：2017-06-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huang-Ren Wei ,  Hsuan-Sheng Lin

IPC: H01L21/302 ,  H01L21/308 ,  H01L21/306 ,  H01L29/06

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.

公开(公告)号：US09721804B1

公开(公告)日：2017-08-01

申请号：US15043627

申请日：2016-02-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huang-Ren Wei ,  Hsuan-Sheng Lin

IPC: H01L29/06 ,  H01L21/308 ,  H01L21/306

CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0657 ,  H01L29/66795

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.

公开(公告)号：US20170287723A1

公开(公告)日：2017-10-05

申请号：US15629760

申请日：2017-06-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huang-Ren Wei ,  Hsuan-Sheng Lin

IPC: H01L21/308 ,  H01L29/06 ,  H01L21/306

CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0657 ,  H01L29/66795

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.

公开(公告)号：US20170207096A1

公开(公告)日：2017-07-20

申请号：US15043627

申请日：2016-02-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Huang-Ren Wei ,  Hsuan-Sheng Lin

IPC: H01L21/308 ,  H01L21/306 ,  H01L29/06

CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3085 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/0657 ,  H01L29/66795

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the substrate; performing a first etching process to remove part of the fin-shaped structure for forming a trench; and performing a second etching process to extend the depth of the trench and divide the fin-shaped structure into a first portion and a second portion.