公开(公告)号：US12289914B2

公开(公告)日：2025-04-29

申请号：US17381989

申请日：2021-07-21

Applicant: United Microelectronics Corp.

Inventor： Chih Tung Yeh ,  Wen-Jung Liao

IPC: H10D64/00 ,  H01L21/02 ,  H10D30/01 ,  H10D30/47 ,  H10D62/824 ,  H10D62/85

Abstract: Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first metal layer, a second metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first metal layer is disposed in the second nitride semiconductor layer. The second metal layer is disposed on the second nitride semiconductor layer. The dielectric layer is disposed between the first metal layer and the second nitride semiconductor layer and/or between the second metal layer and the second nitride semiconductor layer.

公开(公告)号：US12199176B2

公开(公告)日：2025-01-14

申请号：US18372716

申请日：2023-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer and a recess. The group III-V body layer is disposed on the substrate. The group III-V barrier layer is disposed on the group III-V body layer in the active region and the isolation region. The recess is disposed in the group III-V barrier layer without penetrating the group III-V barrier layer in the active region.

公开(公告)号：US12199175B2

公开(公告)日：2025-01-14

申请号：US17827783

申请日：2022-05-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L21/3105 ,  H01L23/31 ,  H01L29/66

Abstract: The present invention provides a method of forming an insulating structure of a high electron mobility transistor (HEMT), firstly, a gallium nitride layer is formed, next, an aluminum gallium nitride layer is formed on the gallium nitride layer, then, a first patterned photoresist layer is formed on the aluminum gallium nitride layer, and a groove is formed in the gallium nitride layer and the aluminum gallium nitride layer, next, an insulating layer is formed and filling up the groove. Afterwards, a second patterned photoresist layer is formed on the insulating layer, wherein the pattern of the first patterned photoresist layer is complementary to the pattern of the second patterned photoresist layer, and part of the insulating layer is removed, then, the second patterned photoresist layer is removed, and an etching step is performed on the remaining insulating layer to remove part of the insulating layer again.

公开(公告)号：US12125903B2

公开(公告)日：2024-10-22

申请号：US18371440

申请日：2023-09-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chuan Huang ,  Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L29/778 ,  H01L21/28 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L29/7786 ,  H01L21/26546 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66462 ,  H01L21/2654 ,  H01L21/28264 ,  H01L29/41766 ,  H01L29/4236

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

公开(公告)号：US11557669B2

公开(公告)日：2023-01-17

申请号：US17321534

申请日：2021-05-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes an enhancement mode high electron mobility transistor (HEMT) with an active region and an isolation region. The HEMT includes a substrate, a group III-V body layer, a group III-V barrier layer, recesses, a passivation layer and an etch mask layer. The group III-V body layer is disposed on the substrate. The group III-V barrier layer is disposed on the group III-V body layer in the active region and the isolation region. The recesses are disposed in the group III-V barrier layer in the active region and the isolation region, respectively. The passivation layer disposed in the recesses of the active region and the isolation region. The etch mask layer disposed between the passivation layer and the group III-V barrier layer in the active region, where the etch mask layer is spaced apart from bottoms of the recesses in the active region and the isolation region.

公开(公告)号：US11264492B2

公开(公告)日：2022-03-01

申请号：US16533812

申请日：2019-08-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shin-Chuan Huang ,  Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/205 ,  H01L21/265

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

公开(公告)号：US11239338B2

公开(公告)日：2022-02-01

申请号：US16666430

申请日：2019-10-29

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Che-Hung Huang ,  Wen-Jung Liao ,  Chun-Liang Hou ,  Chih-Tung Yeh

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/308 ,  H01L29/205 ,  H01L29/20

Abstract: According to an embodiment of the present invention, a method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

公开(公告)号：US20210193824A1

公开(公告)日：2021-06-24

申请号：US17191598

申请日：2021-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Ming Chang ,  Chun-Liang Hou ,  Wen-Jung Liao

IPC: H01L29/778 ,  H01L21/306 ,  H01L29/20 ,  H01L29/66

Abstract: The present disclosure provides a high electron mobility transistor (HEMT) including a substrate; a buffer layer over the substrate; a GaN layer over the buffer layer; a first AlGaN layer over the GaN layer; a first AlN layer over the first AlGaN layer; a p-type GaN layer over the first AlN layer; and a second AlN layer on the p-type GaN layer.

公开(公告)号：US20210134978A1

公开(公告)日：2021-05-06

申请号：US16699706

申请日：2019-12-01

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Shin-Chuan Huang ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H01L21/02

Abstract: A high-electron mobility transistor includes a substrate; a buffer layer on the substrate; a AlGaN layer on the buffer layer; a passivation layer on the AlGaN layer; a source region and a drain region on the AlGaN layer; a source layer and a drain layer on the AlGaN layer within the source region and the drain region, respectively; a gate on the AlGaN layer between the source region and a drain region; and a field plate on the gate and the passivation layer. The field plate includes an extension portion that laterally extends to an area between the gate and the drain region. The extension portion has a wave-shaped bottom surface.

公开(公告)号：US20210066484A1

公开(公告)日：2021-03-04

申请号：US16596738

申请日：2019-10-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Ming Chang ,  Bo-Rong Chen ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/778 ,  H01L29/49 ,  H01L29/20 ,  H01L29/205

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.