公开(公告)号：US20210175343A1

公开(公告)日：2021-06-10

申请号：US16731058

申请日：2019-12-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/778

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US20230369448A1

公开(公告)日：2023-11-16

申请号：US18221396

申请日：2023-07-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/7783 ,  H01L29/2003

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US20230290839A1

公开(公告)日：2023-09-14

申请号：US18199359

申请日：2023-05-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/66

CPC classification number: H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/0684

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.

公开(公告)号：US12206000B2

公开(公告)日：2025-01-21

申请号：US18416764

申请日：2024-01-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

公开(公告)号：US12266701B2

公开(公告)日：2025-04-01

申请号：US18199359

申请日：2023-05-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778

Abstract: A high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation layer and the mesa structure. The mesa structure includes a channel layer, a barrier layer on the channel layer, two opposite first edges extending along a first direction, and two opposite second edges extending along a second direction. The contact structure includes a body portion and a plurality of protruding portions. The body portion penetrates through the passivation layer. The protruding portions penetrate through the barrier layer and a portion of the channel layer. In a top view, the body portion overlaps the two opposite first edges of the mesa structure without overlapping the two opposite second edges of the mesa structure.

公开(公告)号：US20230378314A1

公开(公告)日：2023-11-23

申请号：US18221404

申请日：2023-07-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/7783 ,  H01L29/2003

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US11749740B2

公开(公告)日：2023-09-05

申请号：US16731058

申请日：2019-12-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Bo-Rong Chen ,  Che-Hung Huang ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Chih-Tung Yeh ,  Shin-Chuan Huang ,  Wen-Jung Liao ,  Chun-Liang Hou

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/7783

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.

公开(公告)号：US11695049B2

公开(公告)日：2023-07-04

申请号：US17029075

申请日：2020-09-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Tung Yeh ,  Chun-Liang Hou ,  Wen-Jung Liao ,  Chun-Ming Chang ,  Yi-Shan Hsu ,  Ruey-Chyr Lee

IPC: H01L29/417 ,  H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/4175 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/0684 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401

Abstract: A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor includes a substrate, a mesa structure disposed on the substrate, a passivation layer disposed on the mesa structure, and at least a contact structure disposed in the passivation and the mesa structure. The mesa structure includes a channel layer and a barrier layer disposed on the channel layer. The contact structure includes a body portion and a plurality of protruding portions. The body portion is through the passivation layer. The protruding portions connect to a bottom surface of the body portion and through the barrier layer and a portion of the channel layer.