公开(公告)号：US09425321B2

公开(公告)日：2016-08-23

申请号：US14515579

申请日：2014-10-16

Applicant: UNIVERSITAET STUTTGART

Inventor： Marcus Herrmann ,  Norbert Fruehauf

IPC: H01L21/321 ,  H01L29/786 ,  H01L21/465 ,  H01L21/467 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L21/321 ,  H01L21/465 ,  H01L21/467 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

公开(公告)号：US09446946B2

公开(公告)日：2016-09-20

申请号：US14862504

申请日：2015-09-23

Applicant: UNIVERSITAET STUTTGART

Inventor： Patrick Schalberger ,  Norbert Fruehauf ,  Marcus Herrmann

IPC: H01L21/00 ,  H01L21/16 ,  B81C1/00 ,  H01L29/66 ,  H01L21/306 ,  H01L21/465 ,  H01L21/28 ,  H01L21/44 ,  H01L29/24 ,  H01L29/872 ,  H01L29/16

CPC classification number: B81C1/00246 ,  B81C2201/0133 ,  B81C2203/0742 ,  H01L21/28 ,  H01L21/30604 ,  H01L21/44 ,  H01L21/465 ,  H01L29/1604 ,  H01L29/24 ,  H01L29/247 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/872

Abstract: A method for the fabrication of thin-film transistors together with micromechanical components, other active electrical components or both on an amorphous or polycrystalline substrate includes disposing the thin-film transistors and the other components on different areas of the substrate.

公开(公告)号：US20150108469A1

公开(公告)日：2015-04-23

申请号：US14515579

申请日：2014-10-16

Applicant: UNIVERSITAET STUTTGART

Inventor： Marcus Herrmann ,  Norbert Fruehauf

IPC: H01L29/786 ,  H01L21/465 ,  H01L27/12 ,  H01L29/66 ,  H01L21/321 ,  H01L29/45 ,  H01L21/467

CPC classification number: H01L29/78606 ,  H01L21/321 ,  H01L21/465 ,  H01L21/467 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.

Abstract translation: 薄膜晶体管包括氧化半导体沟道，金属或氧化栅极，漏极和源极接触以及位于氧化物半导体沟道与漏极和源极之间的至少一个势垒层，以阻止氧化半导体沟道 和漏极和源极接触。